A method for fabricating an interconnect structure is disclosed. A substrate with a first dielectric layer is provided. A first conductor is formed in the first dielectric layer. A second dielectric layer is formed on the first dielectric layer. A trench is formed in the second dielectric layer to expose the top surface of the first conductor. An annealing process is performed on the top surface of the first conductor. The annealing process includes the conditions of a temperature of 400-450 C., duration less than 5 minutes, and gaseous atmosphere comprising hydrogen and nitrogen.

A semiconductor device according to the present embodiment includes a wiring layer including a plurality of wires. The wires include first wires and second wires. Each of the first wires has a first width in a direction substantially parallel to the wiring layer. The second wires are arranged at wider intervals than intervals of the first wires. Each of the second wires includes a first wiring member having a second width larger than the first width, and a second wiring member provided on the first wiring member and having a third width larger than the second width.

An embodiment inverter circuit includes a first-conductivity-type semiconductor layer disposed over an interlayer dielectric layer, a gate electrode disposed over the first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer disposed over the gate electrode, a first gate dielectric layer disposed between the first-conductivity-type semiconductor layer and the gate electrode, a second gate dielectric layer disposed between the gate electrode and the second-conductivity-type semiconductor layer, a first source electrode that is in contact with the first-conductivity-type semiconductor layer, a second source electrode that is in contact with the second-conductivity-type semiconductor layer, and a shared drain electrode that is in contact with the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer. At least one of the first-conductivity-type layer and the second-conductivity-type layer includes a metal-oxide semiconductor and/or a multi-layer structure formed in a BEOL process that may be incorporated with other BEOL circuit components such as capacitors, inductors, resistors, and integrated passive devices.

A semiconductor device includes a lower structure, a first interlayer dielectric (ILD) on the lower structure, first pattern regions extending inside the first ILD in a first direction, the first pattern regions being spaced apart from each other in a second direction perpendicular to the first direction, each of the first pattern regions including at least one first pattern, and both ends of the at least one first pattern in the first direction being concave, and second pattern regions extending inside the first ILD in the first direction, the second pattern regions being spaced apart from each other in the second direction and alternating with the first pattern regions in the second direction, and each of the second pattern regions including at least one second pattern.

Provided are an interconnector and an electronic apparatus including the interconnector. The interconnector includes: a metal layer; a dielectric layer surrounding at least a portion of the metal layer; and an interlayer disposed between the metal layer and the dielectric layer and including a ternary metal oxide.

An approach to form a semiconductor structure with a plurality of buried power rails in a semiconductor substrate where at least one buried power rail extends below the backside of the semiconductor substrate. The semiconductor structure provides at least one portion of the first metal layer of the backside power delivery network that surrounds a bottom portion of the buried power rail below the backside of the semiconductor substrate. The bottom portion of the buried power rail is in direct contact with the portion of the first metal layer of the backside power delivery network where the buried power rail and the first metal layer are composed of the same conductive material. The semiconductor structure includes a portion of an interlayer dielectric material isolating the first metal layer of the backside power distribution network from the backside of the semiconductor substrate.

A metallic stack and a preparing method therefor, and an electronic device including the metallic stack. The metallic stack includes at least one interconnection wire layer and at least one via layer alternately arranged on a substrate. At least one pair of interconnection wire layer and via layer in the metallic stack includes interconnection wires in the interconnection wire layer and conductive vias in the via layer, wherein the interconnection wire layer is closer to the substrate than the via layer. At least a part of the interconnection wires is integrated with the conductive vias on the at least a part of the interconnection wires.

A semiconductor device comprises a III-N device including an insulating substrate. The insulating substrate includes a first side and a second side. The device further includes a III-N material structure on a first side of the insulating substrate, and a gate electrode, a source electrode, and a drain electrode on a side of the III-N material structure opposite the substrate. A backmetal layer on the second side of the insulating substrate, and a via hole is formed through the III-N material structure and the insulating substrate. A metal formed in the via-hole is electrically connected to the drain electrode on the first side of the substrate and electrically connected to the backmetal layer on the second side of the substrate.

A semiconductor device includes an active region extending on a substrate in a first direction, a gate electrode intersecting the active region and extending in a second direction, perpendicular to the first direction, a contact structure disposed on the active region on one side of the gate electrode and extending in the second direction, and a first via disposed on the contact structure to be connected to the contact structure and has a shape in which a length in the second direction is greater than a length in the first direction. A plurality of first metal interconnections are provided, which extend in the first direction on the first via, and are connected to the first via. A second via is provided, which is disposed on the plurality of first metal interconnections to be connected to the plurality of first metal interconnections and has a shape in which a length in the second direction is greater than a length in the first direction.

A semiconductor device includes: a first via level forming a bottom jumper configured to provide an output; a first set of two or more first metallization tracks overlying the first via level; a second via level forming a first top jumper overlying the first set of two or more first metallization tracks; and a second metallization track overlying the second via level.