A semiconductor device includes a gate extraction portion extracted from a gate electrode and extending from an active region to an outer peripheral region so as to be disposed above an end portion of a field insulating film. The end portion of the gate field insulating film above which the gate extraction portion is disposed is inclined in such a manner that a thickness of the field insulating film increases in a direction from the active region toward the outer peripheral region.

The present invention provides a composition for treating a semiconductor device, which is capable of forming a coating film having excellent ALD inhibition properties. The composition for treating a semiconductor device of the present invention contains a compound which has a specific functional group bonded or adsorbed to a substrate and has a carbon-carbon triple bond, and a solvent, in which the specific functional group is a basic functional group or an acidic functional group.

Methods of forming a slurry and methods of performing a chemical mechanical polishing (CMP) process utilized in manufacturing semiconductor devices, as described herein, may be performed on semiconductor devices including integrated contact structures with ruthenium (Ru) plug contacts down to a semiconductor substrate. The slurry may be formed by mixing a first abrasive, a second abrasive, and a reactant with a solvent. The first abrasive may include a first particulate including titanium dioxide (TiO.sub.2) particles and the second abrasive may include a second particulate that is different from the first particulate. The slurry may be used in a CMP process for removing ruthenium (Ru) materials and dielectric materials from a surface of a workpiece resulting in better WiD loading and planarization of the surface for a flat profile.