The present invention addresses the problem of providing a novel SiC epitaxial substrate manufacturing method and manufacturing device therefor. An SiC substrate and an SiC material, which has a lower doping concentration than said SiC substrate, are heated facing one another, and material is transported from the SiC material to the SiC substrate to form an SiC epitaxial layer. As a result, in comparison with the existing method (chemical vapour deposition), it is possible to provide an SiC epitaxial substrate manufacturing method with a reduced number of parameters to be controlled.

Provided is a method for manufacturing a semiconductor device whose electric characteristics are prevented from being varied and whose reliability is improved. In the method, an insulating film is formed over an oxide semiconductor film, a buffer film is formed over the insulating film, oxygen is added to the buffer film and the insulating film, a conductive film is formed over the buffer film to which oxygen is added, and an impurity element is added to the oxide semiconductor film using the conductive film as a mask. An insulating film containing hydrogen and overlapping with the oxide semiconductor film may be formed after the impurity element is added to the oxide semiconductor film.

Methods and systems for fabricating semiconductor devices that use a cyclic pulse-etch-purge process, particularly after epitaxial film deposition, are provided. The process involves alternating flows of etch and purge gases (such as H2, N2, HCl, Cl2, and others) and optionally deposition gases to selectively remove unwanted doped silicon-containing material, shaping epitaxial features with precise profiles and minimizing defects like voids. The method can be performed in-situ in the same chamber as deposition and uses controlled cycles of gas pulses to achieve targeted source/drain feature formation. It supports various process parameters and chemistries, is compatible with standard nMOS and pMOS conditions, and can be implemented in automated semiconductor manufacturing environments.