A method for manufacturing a semiconductor structure includes: forming a first bonding layer on a device substrate formed with a semiconductor device so as to cover the semiconductor device, wherein the first bonding layer includes a first metal oxide material in an amorphous state; forming a second bonding layer on a carrier substrate, wherein the second bonding layer includes a second metal oxide material in an amorphous state; conducting a surface modification process on the first bonding layer and the second bonding layer; bonding the device substrate and the carrier substrate to each other through the first and second bonding layers; and annealing the first and second bonding layers so as to convert the first and second metal oxide materials from the amorphous state to a crystalline state.

A method for transferring a semiconductor layer from a donor substrate to a receiver substrate includes first implantation of first light ions into the donor substrate at a predetermined implantation depth to form a buried fragile plane, epitaxy on the donor substrate of the semiconductor layer, second implantation of second light ions into the donor substrate through the semiconductor layer to be transferred level with the fragile plane, assembly by bonding of the receiver substrate and of the donor substrate covered with the semiconductor layer to be transferred, the semiconductor layer to be transferred being placed between the receiver substrate and donor substrate, and fracturing by annealing the donor substrate along the buried fragile plane, the first ions implanted with a first dose so that there is no fracturing at the predetermined implantation depth, and the second ions implanted with a second dose such that the donor substrate fractures.

A temporary substrate, which is detachable at a detachment temperature higher than 1000 C. comprises: a semiconductor working layer extending along a main plane, a carrier substrate, an intermediate layer having a thickness less than 20 nm arranged between the working layer and the carrier substrate, a bonding interface located in or adjacent the intermediate layer, gaseous atomic species distributed according to a concentration profile along the axis normal to the main plane, the atoms remaining trapped in the intermediate layer and/or in an adjacent layer of the carrier substrate with a thickness less than or equal to 10 nm and/or in an adjacent sublayer of the working layer with a thickness less than or equal to 10 nm when the temporary substrate is subjected to a temperature lower than the detachment temperature.

Methods of processing a substrate are disclosed herein which include treating a surface of a first portion of the substrate to produce a treated substrate having a treated first portion and a second portion, wherein a bonding speed of the treated first portion to another substrate is different than a bonding speed of the second portion to the other substrate. A method of bonding a first substrate to a second substrate is also disclosed.

A stacked substrate structure and a manufacturing method thereof are provided. The stacked substrate structure includes a first structure and a second structure. The first structure has a first bonding surface and includes a first circuit structure. The first circuit structure includes a plurality of first conductive layers and a first expansion modulation layer. The plurality of first conductive layers are stacked in a vertical direction. The first expansion modulation layer is disposed between the adjacent first conductive layers. A coefficient of thermal expansion of the first expansion modulation layer is greater than a coefficient of thermal expansion of the plurality of first conductive layers. The second structure has a second bonding surface, and the second bonding surface of the second structure faces the first bonding surface of the first structure.