A manufacture includes a polysilicon structure over a portion of a substrate. The manufacture further includes a spacer on a sidewall of the polysilicon structure, wherein the spacer has a concave corner region between an upper portion and a lower portion, the spacer has an outer sidewall and an inner sidewall, and the inner sidewall is between the outer sidewall and the polysilicon structure. The manufacture further includes a protective layer exposing a portion of the outer sidewall of the spacer above the concave corner region, wherein the protective layer covers an entirety of the lower portion of the spacer, and the protective layer directly contacts the substrate.

Selective gas etching for self-aligned pattern transfer uses a first block and a separate second block formed in a sacrificial layer to transfer critical dimensions to a desired final layer using a selective gas etching process. The first block is a first hardmask material that can be plasma etched using a first gas, and the second block is a second hardmask material that can be plasma etched using a second gas separate from the first gas. The first hardmask material is not plasma etched using the second gas, and the second hardmask material is not plasma etched using the first gas.

A composition for forming a silicon-containing film, the composition containing a silicon precursor compound represented by chemical formula 1, can be used to efficiently form a silicon-containing film, including a silicon-containing oxide film or a silicon-containing composite metal oxide film, at a high temperature of at least 600 C., wherein the silicon-containing film can be controlled to have a desired thickness and composition, and can be formed to have excellent coverage and uniformity even on a substrate having a complex shape.

Provided is a method of forming a thin film to minimize an increase in defects at an interface during a high-temperature oxidation process of a SiC substrate. The method includes depositing a first thin film on the SiC substrate by applying a radical gas, forming an oxide film on the first thin film by performing the high-temperature oxidation process, and performing annealing on the oxide film.

There is provided a method for etching a silicon-containing film. The method includes: introducing a substrate having a first silicon-containing film and a second silicon-containing film into a process chamber of an etching apparatus; supplying at least one etching gas including F.sub.3NO into the process chamber; applying a predetermined power to the process chamber maintained at a predetermined pressure to generate direct plasma in the process chamber; and etching the first silicon-containing film on the substrate by reactive species (radicals) of the etching gas activated by the direct plasma. The predetermined pressure is set within a predetermined range in which the slope of the etch rate of the first silicon-containing film with respect to the pressure differs from the slope of the etch rate of the second silicon-containing film with respect to the pressure in terms of sign.

A semiconductor device includes a substrate including active regions, channel layers disposed in each of trenches extending from an upper surface of the active regions in a direction perpendicular to an upper surface of the substrate, and gate electrodes on the channel layers. Each of the channel layers includes a first single unit layer comprising a first oxide semiconductor, and the first single unit layer includes a first oxide in a first region, and a second oxide different from the first oxide in a second region, which is remaining portion of the first single unit layer.

A deposition method includes: (a) preparing a substrate with a recess on a surface thereof; (b) supplying an organic raw material gas to the surface to adsorb the organic raw material gas to the recess; (c) supplying an oxygen-containing gas to the surface to oxidize the organic raw material gas adsorbed to the recess; and (d) after the (c), supplying a first gas containing a dehydrating agent to the surface.

A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor which is at a temperature of from about 20 C. to about 100 C.; increasing pressure in the reactor to at least 10 torr; and introducing into the reactor at least one silicon-containing compound having at least one acetoxy group to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon oxide coating has a low k and excellent mechanical properties.

A capacitor is provided. The capacitor includes a first electrode, a second electrode disposed to face the first electrode, a dielectric layer of a rutile phase, disposed between the first electrode and the second electrode, and an interface layer between the first electrode and the dielectric layer, wherein the interface layer includes a first interface layer and a second interface layer, the first interface layer is adjacent to the first electrode, the second interface layer is adjacent to the dielectric layer, the first interface layer includes a conductive metal oxide having a work function in a range of about 4.8 eV to about 6.0 eV, the second interface layer includes a metal oxide having a rutile-phase crystal structure, and a thickness of the second interface layer is smaller than a thickness of the first interface layer.

In a method of manufacturing a semiconductor device, a fin structure, in which first semiconductor layers and second semiconductor layers are alternately stacked, is formed. A sacrificial gate structure is formed over the fin structure. A source/drain region of the fin structure, which is not covered by the sacrificial gate structure, is etched, thereby forming a source/drain space. The first semiconductor layers are laterally etched through the source/drain space. An inner spacer made of a dielectric material is formed on an end of each of the etched first semiconductor layers. A source/drain epitaxial layer is formed in the source/drain space to cover the inner spacer. A lateral end of each of the first semiconductor layers has a V-shape cross section after the first semiconductor layers are laterally etched.