An oxide film coating solution, including a silane compound and an organic solvent in which the silane compound is dissolved, in which the silane compound is represented by Chemical Formula 1 or Chemical Formula 2. Chemical Formula 1 is (R).sub.nSi(R).sub.m, in which R is an alkyl having a carbon number of 1 to 20, amine, fluorine, chlorine, vinyl, sulfur, methacryl, acetoxy, isocyanurate, or alkyleneoxy group, R is an alkyl, methoxy, ethoxy, chloro, or disilazane group, n and m are integers of 1 to 3, and n+m is 4. Chemical Formula 2 is (R.sub.3Si).sub.nN(H).sub.m, in which R is an alkyl having a carbon number of 1 to 20, amine, fluorine, chlorine, vinyl, sulfur, methacryl, acetoxy, isocyanurate, or alkyleneoxy group, n and m are integers of 0 to 3, and n+m is 3.

A method for deposition of silicon and nitrogen containing dielectric film via an atomic layer deposition (ALD) or in an ALD-like process. The method includes the steps of a) providing at least one substrate into a reactor and heating the reactor to at least one temperature ranging from about 25 C. to about 600 C. and optionally maintaining the reactor at a pressure of about 100 torr or less; b) introducing into the reactor at least a first precursor comprising a halogenated silicon-containing compound that forms a silicon-containing layer; c) purging any unreacted precursor from the reactor using inert gas; d) introducing at least a second precursor, comprising at least two or more primary amino-containing silicon atoms, which reacts with the silicon-containing layer to form a film comprising silicon and nitrogen; e) purging the reactor using inert gas; f) introducing a plasma source into the reactor to react with the film comprising silicon and nitrogen; g) purging any reaction by-products from the reactor using inert gas, and repeating steps b to g to bring the film comprising silicon and nitrogen to a desired thickness.

Provided is a method of processing a substrate in a reaction chamber, more particularly to a method of increasing a wet etch rate of SiCN layer in order to reduce an overhang from a SiCN layer formed on a stepped structure. The method comprises supplying a carbon-containing silicon source and a nitrogen gas simultaneously while applying a power, followed by performing a post treatment, wherein the wet etch rate of SiCN layer is modulated by the amount of nitrogen source supplied.

A substrate processing method comprising a gap-fill process is disclosed. The method includes providing a substrate in which a gap is formed in a surface thereof to a reaction space, supplying an oligomeric silicon precursor and a nitrogen-containing gas to the reaction space, forming a silicon nitride film having flowability on the substrate to fill at least a portion of the gap of the substrate while maintaining the reaction space in a plasma state, and densifying the silicon nitride film.

Methods of forming silicon nitride on a sidewall of a feature are disclosed. Exemplary methods include providing a substrate comprising a feature comprising a sidewall surface and a surface adjacent the sidewall surface, forming a silicon oxide layer overlying the sidewall surface and the surface adjacent the sidewall surface, using a cyclical deposition process, depositing a silicon nitride layer overlying the silicon oxide layer, and exposing the silicon nitride layer to activated species generated from a hydrogen-containing gas. Exemplary methods can additionally include selectively removing a portion of the silicon nitride layer. Structures formed using the methods and systems for performing the methods are also disclosed.