Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.

A method for forming an insulating layer pattern includes providing a substrate including two or more different types of dielectric layer regions; selectively forming a blocking layer on the substrate to include a first region on which a blocking layer is formed and a second region on which no blocking layer is formed or the blocking layer is formed less than in the first region; selectively forming an insulating layer on the second region; and etching a portion of an upper portion of the insulating layer.

Provided are high quality metal-nitride, such as aluminum nitride (AlN), films for heat dissipation and heat spreading applications, methods of preparing the same, and deposition of high thermal conductivity heat spreading layers for use in RF devices such as power amplifiers, high electron mobility transistors, etc. Aspects of the inventive concept can be used to enable heterogeneously integrated compound semiconductor on silicon devices or can be used in in non-RF applications as the power densities of these highly scaled microelectronic devices continues to increase.

Exemplary semiconductor processing methods may include providing a pre-treatment precursor to a processing region of a semiconductor processing chamber. A substrate may be housed having a first layer of silicon-and-germanium-containing material and a second layer of silicon-and-germanium-containing material may be housed within the processing region. A native oxide may be present. The methods may include contacting the substrate with the pre-treatment precursor to remove the native oxide. The methods may include contacting the substrate with an oxygen-containing precursor to oxidize at least a portion of the first layer of silicon-and-germanium-containing material and at least a portion of the second layer of silicon-and-germanium-containing material. The methods may include contacting the substrate with an etchant precursor to selectively etch the first layer of silicon-and-germanium-containing material.

Memory devices and methods of forming memory devices are described. The memory devices comprise a silicon nitride hard mask layer on a ruthenium layer. Forming the silicon nitride hard mask layer on the ruthenium comprises pre-treating the ruthenium layer with a plasma to form an interface layer on the ruthenium layer; and forming a silicon nitride layer on the interface layer by plasma-enhanced chemical vapor deposition (PECVD). Pre-treating the ruthenium layer, in some embodiments, results in the interface layer having a reduced roughness and the memory device having a reduced resistivity compared to a memory device that does not include the interface layer.

The present disclosure relates to methods and apparatuses for selective deposition on a surface. In particular, a silicon-containing inhibitor can be used to selectively bind to a first region, thus inhibiting deposition of a material on that first region.

A part is adapted to be used in a semiconductor processing equipment. The part includes a substrate and a protective coating. The protective coating covers at least a part of the substrate, is made of silicon carbide, and has an atomic ratio of carbon in the protective coating increases in a direction away from the substrate while an atomic ratio of silicon in the protective coating decreases in the direction. The atomic ratio of silicon in the protective coating is larger than that of the carbon near the substrate, and the atomic ratio of silicon in the protective coating is smaller than that of carbon near the outer surface of the protective coating. A method for making the part is also provided.