Methods for filling a recessed feature on a substrate are disclosed. The methods disclosed include depositing a flowable layer structure on the substrate and heating the flowable layer structure above the glass transition temperature of the flowable layer structure. Methods for depositing the flowable layer structure include depositing an aluminum oxide based flowable layer structure employing atomic layer deposition processes.

A film forming method includes forming a first film to which a first pattern has been transferred by arranging a first curable composition on a substrate and shaping the first curable composition using a first mold having the first pattern, and forming a second film to which a second pattern has been transferred by arranging a second curable composition on the first film and shaping the second curable composition using a second mold having the second pattern.

A method of forming a semiconductor device includes: forming a dummy gate structure over a fin structure that protrudes above a substrate, where the fin structure includes a fin and a layer stack over the fin, where the layer stack comprises alternating layers of a first semiconductor material and a second semiconductor material; forming openings in the fin structure on opposing sides of the dummy gate structure, where the openings exposes first portions of the first semiconductor material and second portions of the second semiconductor material; recessing the exposed first portions of the first semiconductor material to form sidewall recesses in the first semiconductor material; lining the sidewall recesses with a first dielectric material; depositing a second dielectric material in the sidewall recesses on the first dielectric material; after depositing the second dielectric material, annealing the second dielectric material; and after the annealing, forming source/drain regions in the openings.