H10W72/07204

Method of repairing light emitting device and display panel having repaired light emitting device

A display panel including a circuit board having first pads, light emitting devices disposed on the circuit board and having second pads and including at least one first light emitting device to emit light having a first peak wavelength and second light emitting devices to emit light having a second peak wavelength, and a metal bonding layer electrically connecting the first pads and the second pads, in which the metal bonding layer of the first light emitting device has a thickness different from that of the metal bonding layer of the second light emitting devices while including a same material, and a surface of the second light devices are disposed at an elevation between an upper surface and a bottom surface of the first light emitting device.

Mounting device comprising semiconductor chip mounted through thermo-compression tool and mounting method thereof

In this mounting device (10) for mounting a semiconductor chip (100) on a substrate (104), a controller (50) is provided with: a mounter for pressing the semiconductor chip (100) to the substrate (104) in a state where a cover film (110) is interposed between the semiconductor chip (100) and a thermocompression tool (16), and for heating and then cooling the thermocompression tool (16) to mount the semiconductor chip (100) on the substrate (104); and a separator for heating the thermocompression tool (16) after the semiconductor chip (100) has been mounted, and for raising a mounting head (17) to be separated from the cover film (110).

MANUFACTURABLE GALLIUM AND NITROGEN CONTAINING SINGLE FREQUENCY LASER DIODE

A method for manufacturing an optical device includes providing a carrier waver, provide a first substrate having a first surface region, and forming a first gallium and nitrogen containing epitaxial material overlying the first surface region. The first epitaxial material includes a first release material overlying the first substrate. The method also includes patterning the first epitaxial material to form a plurality of first dice arranged in an array; forming a first interface region overlying the first epitaxial material; bonding the first interface region of at least a fraction of the plurality of first dice to the carrier wafer to form bonded structures; releasing the bonded structures to transfer a first plurality of dice to the carrier wafer, the first plurality of dice transferred to the carrier wafer forming mesa regions on the carrier wafer; and forming an optical waveguide in each of the mesa regions, the optical waveguide configured as a cavity to form a laser diode of the electromagnetic radiation.

Method for manufacturing semiconductor device by removing carrier after forming re-distribution layer

A method for manufacturing a semiconductor device includes preparing a temporary fixing structure body in which semiconductor elements each including a first surface on which a connection terminal is formed and a second surface are attached to a temporary fixing material, forming a curable bonding adhesive layer on the second surface of each of the semiconductor elements, attaching a carrier to one surface of the curable bonding adhesive layer opposite to the semiconductor elements, fixing the semiconductor elements to the carrier by curing the curable bonding adhesive layer, and removing the temporary fixing material. The semiconductor elements are attached onto the temporary fixing material such that the first surface of each of the semiconductor elements is directed toward the temporary fixing material, and are encapsulated with an encapsulant material such that the second surface of each of the semiconductor elements is exposed from an encapsulant material layer.

Display panel and fabrication method thereof, and display apparatus

A display panel, a fabrication method of the display panel, and a display apparatus are provided in the present disclosure. The display panel includes a substrate; a drive substrate on the substrate, where the drive substrate includes a first film layer; and the first film layer includes a first opening; and a light-emitting element on the drive substrate, where the light-emitting element is disposed corresponding to the first opening. The drive substrate further includes an auxiliary film layer; and the auxiliary film layer includes a thickened part, a thinned part, or a hollow part overlapped with the first opening.

Driving substrate, micro LED transfer device and micro LED transfer method
12604567 · 2026-04-14 · ·

A driving substrate, a micro LED transfer device and a micro LED transfer method are provided. A side surface of the driving substrate is arranged with a binding metal layer, a positioning layer is arranged around the binding metal layer, and a width of the positioning layer at a position away from the driving substrate is less than that a width at a position close to the driving substrate.