A method of operating an electronic device that is configured to support manufacturing a semiconductor device includes (i) selecting a height of a stage of the electronic device that is configured to hold the semiconductor device, (ii) generating white light by using a light source of the electronic device, (iii) generating light of a selected wavelength by filtering the white light using a monochromater of the electronic device, (iv) emitting the light of the selected wavelength to the semiconductor device using a beam splitter of the electronic device, and (v) capturing reflection light reflected from the semiconductor device using a camera of the electronic device.

A solder reflow system that includes a vacuum chamber and a sample chuck in the vacuum chamber to support a semiconductor wafer to be processed. The solder reflow system further include a heating element coupled to the vacuum chamber and configured to heat the semiconductor wafer, a thermocouple connected to the sample chuck to measure a temperature of the semiconductor wafer, a pyrometer positioned to detect an optical signal from the semiconductor wafer to estimate the temperature of the semiconductor wafer. The control system is configured to control the heating element to heat the semiconductor wafer, obtain one or more measurements of the temperature of the semiconductor wafer from the thermocouple and one or more estimates of the temperature of the semiconductor wafer from the pyrometer during the heating of the semiconductor wafer, and determine a modification of the heating of the semiconductor wafer based on the obtained measurements.

The application provides a display panel motherboard and manufacturing method thereof. The display panel motherboard includes display panel forming areas distributed in an array and a test area adjacent to the display panel forming areas. The display panel motherboard includes an array mother substrate; a light-emitting layer, disposed on a surface of a side of the array mother substrate and located in the display panel forming areas; and a test component, disposed on the surface of the array mother substrate and located in the test area, the test component including a test block including a fluorescent layer, disposed on the surface of the array mother substrate and emitting light upon being irradiated by activation light; a target test layer, disposed on the side of the fluorescent layer facing away from the surface; and a positioning reference portion, disposed at a peripheral side of the target test layer.

An apparatus for manufacturing a display apparatus includes a stage on which a base substrate is seated, a discharge unit on the stage and configured to spray a first coating liquid onto the base substrate, a first sensor unit configured to detect a height of the first coating liquid applied to a first area of the base substrate, and a first temperature adjustment unit configured to adjust a temperature of the first coating liquid applied to the first area of the base substrate.

A defect inspection apparatus according to the present embodiment includes: an irradiation optical system configured to irradiate a sample including a SiC substrate, a buffer layer formed on the SiC substrate, and a drift layer formed on the buffer layer with excitation light; a filter unit configured to control a wavelength band to transmit photoluminescence light generated from the sample; a detection optical system configured to detect the photoluminescence light transmitted through the filter unit; and an image processing unit configured to form an image from the detected photoluminescence light and to discriminate a defect captured in the formed image, and the image processing unit discriminates the defect based on whether a length of the defect is L1=(D1+D2)/tan or L2=D2/tan .

A contaminant detection device includes: a contact module configured to contact a wafer; a detection module on the contact module, the detector being configured to change color by reacting with a metal ion; and a sensing module configured to sense a color change of the detection module.

A semiconductor structure includes a first layer, a second layer, and a third layer bonded together in a multi-layer stack. The first layer includes a first alignment section, the second layer includes a second alignment section, and the third layer includes a third alignment section and a fourth alignment section. The third alignment section is along a first X-ray path with the first alignment section and the fourth alignment section is along a second X-ray path with the second alignment section.