The one-side polishing apparatus for a workpiece of the present disclosure further comprises a surface displacement measurement section that can measure displacement of an exposed top surface, which is a top surface of the polishing pad that is not covered by the polishing head. The method for one-side polishing of a workpiece of the present disclosure polishes, in the polishing process, one side of the workpiece while measuring displacement of the exposed upper surface by the surface displacement measurement section that can measure the displacement of the exposed upper surface. The method for manufacturing silicon wafers of the present disclosure uses the method for one-side polishing of a workpiece as described above.

A method for polishing a silicon carbide surface. The silicon carbide surface is polished with a particulate abrasive while exposed to a composition of water, an oxidizing agent and an electrophile.

An example method includes providing a wide bandgap semiconductor workpiece. The example method includes exposing the wide bandgap semiconductor workpiece to one or more electrical discharges from an electrical discharge machining (EDM) system to reduce a surface roughness of the wide bandgap semiconductor workpiece. Exposing the wide bandgap semiconductor workpiece to the one or more electrical discharges may include submerging a surface of the wide bandgap semiconductor workpiece in a dielectric fluid; positioning an electrode head relative to the surface such that a gap is defined between an end of the electrode head and the surface; and generating an electrical discharge across the gap to create a plasma zone within the gap such that a material is removed from the surface.