H10P14/2911

Growth of semiconductor materials by hydride vapor phase epitaxy using an external aluminum chloride generator

Disclosed herein is the controlled epitaxy of Al.sub.xGa.sub.1-xAs, Al.sub.xIn.sub.1-xP, and Al.sub.xGa.sub.yIn.sub.1-x-yP by hydride vapor phase epitaxy (HVPE) through use of an external AlCl.sub.3 generator.