Patent classifications
H
H10
H10P
14/00
H10P14/2911
Growth of semiconductor materials by hydride vapor phase epitaxy using an external aluminum chloride generator
12540417
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2026-02-03
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Disclosed herein is the controlled epitaxy of Al.sub.xGa.sub.1-xAs, Al.sub.xIn.sub.1-xP, and Al.sub.xGa.sub.yIn.sub.1-x-yP by hydride vapor phase epitaxy (HVPE) through use of an external AlCl.sub.3 generator.