Methods for forming structures that include forming a heteroepitaxial layer on a substrate are disclosed. The presently disclosed methods comprise epitaxially forming a buffer layer on the substrate. The substrate has a substrate composition. The buffer layer has a buffer layer composition. The buffer layer composition is substantially identical to the substrate composition. The presently disclosed methods further comprise epitaxially forming a heteroepitaxial layer on the buffer layer. The heteroepitaxial layer has a heteroepitaxial layer composition which is different from the substrate composition.

Exemplary semiconductor processing methods may include forming a barrier layer on a first source/drain material disposed on a substrate housed within a processing region of a semiconductor processing chamber. The first source/drain material may be doped with a dopant. The methods may include growing an epitaxial silicon-containing material on the barrier layer. The barrier layer may reduce an amount of diffusion of the dopant from the first source/drain material into the epitaxial silicon-containing material.

Provided is a method for manufacturing a semiconductor silicon wafer capable of inhibiting P-aggregation defects (SiP defects) and SF in an epitaxial layer. The method includes a step of forming a silicon oxide film with a thickness of at least 300 nm or thicker only on the backside of the silicon wafer substrate by the CVD method at a temperature of 500 C. or lower after the step of forming the silicon oxide film, a step of heat treatment where the substrate is kept in an oxidizing atmosphere at a constant temperature of 1100 C. or higher and 1250 C. or lower for 30 minutes or longer and 120 minutes or shorter after the heat treatment, a step of removing surface oxide film formed on the front surface of the substrate, and a step of depositing a silicon monocrystalline epitaxial layer on the substrate after the step of removing the surface oxide film.