An acoustic transduction unit, a manufacturing method thereof and an acoustic transducer, and relates to the technical field of electronic devices. A first electrode is arranged on a first substrate, a support layer is arranged on a side, close to the first electrode, of the first substrate, and a conductive diaphragm layer is arranged on a side, away from the first substrate, of the support layer; a cavity is enclosed by the support layer, overlapping areas exist between orthographic projections of the first electrode, the conductive diaphragm layer and the cavity on the first substrate, and the conductive diaphragm layer serves as both a diaphragm layer and a second electrode in the acoustic transduction unit, it allows the conductive diaphragm layer to be configured as both the diaphragm layer and the second electrode, a layer structure of the acoustic transduction unit is simple.

A method includes obtaining an active device layer. The active device layer has a first surface with one or more active feature areas. First portions of the active feature areas are exposed, and second portions of the active feature areas are covered by an insulating layer. A conformal overcoat layer is formed on the first surface. A base of a microelectromechanical systems (MEMS) device layer is formed on the conformal overcoat layer. The MEMS device layer is spatially segregated from the active feature areas by removing portions of the base of the MEMS device layer in one or more antiparasitic regions (APRs) that correspond to the active feature areas. Metal MEMS features are formed on the base of the MEMS device layer. Selected portions of the active feature areas are exposed removing portions of the conformal overcoat layer that overlay the active feature areas.

A contact having a first contact member having an exposed surface, the exposed surface having irregularities, undulations, or asperities that form one or more high points and low points on the exposed surface, a second contact member having a contact base surface, a plurality of electrically conductive flexures extending from the contact base surface, and when the first contact member is positioned adjacent to the second contact member in a closed position in which the contact base surface of the second contact member is not in electrical contact with the one or more high points on the exposed surface of the first contact member, each flexure of the plurality of flexures is in electrical contact with the exposed surface of the first contact member.

A method for fabricating a semiconductor device is disclosed. A semiconductor substrate comprising a MOS transistor is provided. A MEMS device is formed over the MOS transistor. The MEMS device includes a bottom electrode in a second topmost metal layer, a diaphragm in a pad metal layer, and a cavity between the bottom electrode and the diaphragm.

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.

A method for fabricating a microelectromechanical system device. Submerging a microelectromechanical system device in water. The microelectromechanical system devices include a sacrificial layer deposited on the surface of a substrate between the portion of a structural layer to be freed for movement and a base. Anodically etching the sacrificial layer from the microelectromechanical device to free the portion of the structural layer for movement. A system comprising a solution of water, a microelectromechanical system device including a sacrificial layer of chromium deposited on the surface of a substrate between a portion of a structural layer and a base. The microelectromechanical system device is submerged in the solution of water. An electrode is submerged in the water. The electrode provides a negative bias. A voltage source provides a positive bias to the sacrificial layer of chromium, anodically etching the sacrificial layer of chromium and freeing the portion of the structural layer.

A method for fabricating a microelectromechanical system device. Submerging a microelectromechanical system device in water. The microelectromechanical system devices include a sacrificial layer deposited on the surface of a substrate between the portion of a structural layer to be freed for movement and a base. Anodically etching the sacrificial layer from the microelectromechanical device to free the portion of the structural layer for movement. A system comprising a solution of water, a microelectromechanical system device including a sacrificial layer of chromium deposited on the surface of a substrate between a portion of a structural layer and a base. The microelectromechanical system device is submerged in the solution of water. An electrode is submerged in the water. The electrode provides a negative bias. A voltage source provides a positive bias to the sacrificial layer of chromium, anodically etching the sacrificial layer of chromium and freeing the portion of the structural layer.

The various technologies presented herein relate to formation of carbon micromechanical systems (CMEMS), wherein the CMEMS comprise multiple layers of carbon structures and are formed using a plurality of photoresist precursors that are processed to form carbon. The various embodiments can be utilized in producing a plurality of CMEMS with full production level fabrication, e.g., 6 inch wafers can be processed. A pyrolyzed layer of carbon is lithographically defined after pyrolysis, wherein the post-pyrolysis etch process can produce carbon structures having repeatable and accurate device geometries, with straight sidewalls. A sacrificial layer can be applied to facilitate separation of a first carbon layer from a second carbon layer, wherein, upon pyrolysis to form the second carbon layer and lithography thereof, the sacrificial layer is removed to form a CMEMS comprising a first carbon layer (e.g., comprising bottom contacts) located beneath a second carbon layer (e.g., a mechanical layer).

Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both metal material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.