A method for etching silicon at cryogenic temperatures is provided. The method includes forming an inert layer from condensation of a noble gas at cryogenic temperatures on exposed surfaces such as the sidewalls of a feature to passivate the sidewalls prior to the etching process. The method further includes flowing a fluorine-containing precursor gas into the chamber to form a fluorine-containing layer on the inert layer. The method further includes exposing the fluorine-containing layer and the inert layer to an energy source to form a passivation layer on the exposed portions of the substrate and exposing the substrate to ions to etch the substrate.

Plasma processing apparatus and associated methods are provided. In one example, a method can include admitting a process gas into a plasma chamber. The method can include exciting with RF energy an inductive coupling element to initiate ignition of a plasma induced in the process gas. The method can include adjusting an RF voltage of an electrostatic shield located between the inductive coupling element and the plasma chamber. The electrostatic shield can have a stray capacitance to a ground reference. The method can include conducting an ion-assisted etching process on the workpiece based at least in part on the RF voltage of the electrostatic shield.

Plasma processing apparatus and associated methods are provided. In one example, a method can include admitting a process gas into a plasma chamber. The method can include exciting with RF energy an inductive coupling element to initiate ignition of a plasma induced in the process gas. The method can include adjusting an RF voltage of an electrostatic shield located between the inductive coupling element and the plasma chamber. The electrostatic shield can have a stray capacitance to a ground reference. The method can include conducting an ion-assisted etching process on the workpiece based at least in part on the RF voltage of the electrostatic shield.

A method for producing a reflection-reducing layer system is disclosed. In an embodiment, a method includes depositing an organic layer on the substrate, generating a nanostructure in the organic layer by a plasma etching process, applying a cover layer to the nanostructure, wherein the organic layer, the nanostructure and the cover layer together form a reflection-reducing structure, wherein the cover layer comprises an inorganic material or an organosilicon compound, and wherein the cover layer is at least 5 nm thick and performing a post-treatment after applying the cover layer, wherein a material of the organic layer is at least partially removed, decomposed or chemically converted, and wherein an effective refractive index n.sub.eff,2 of the reflection-reducing structure after the post-treatment is smaller than an effective refractive index n.sub.eff,1 of the reflection-reducing structure before the post-treatment.

A chemical liquid treatment apparatus includes processing chambers; a chemical liquid feeding unit configured to cyclically feed a chemical liquid into the processing chambers; and a modifying unit. The modifying unit, when using a chemical liquid in which an effect thereof varies with a chemical liquid discharge time, is configured to calculate a variation of the effect of the chemical liquid based on the chemical liquid discharge time and is configured to modify the chemical liquid discharge time for each of the processing chambers based on the calculated variation of the effect of the chemical liquid and a cumulative time of the chemical liquid discharge time.

A system for controlling processing state of a plasma process is provided. One example system includes a plasma reactor having a plurality of tuning knobs for making settings to operational conditions of the plasma reactor. A plurality of sensors of the plasma reactor is included, where each of the plurality of sensors is configured to produce a data stream of information during operation of the plasma reactor for carrying out the plasma process. A controller of the plasma reactor is configured to execute a multivariate processing that is configured to use as input desired processing state values that define intended measurable conditions within a processing environment of the plasma reactor and identify current plasma processing values. The multivariate processing uses a machine learning engine that receives as inputs the desired processing state values and data streams from the plurality of sensors during processing of the plasma process. The machine learning engine is configured to identify current processing state values used to produce a compensation vector, such that the compensation vector defines differences between the desired process state values and the current processing state values. The controller is further configured to execute a compensation processing operation that transforms the compensation vector expressed in terms of measured conditions within the processing environment to changes of specific one or more of the tuning knobs of the plasma reactor.

A method for producing a reflection-reducing layer system is disclosed. In an embodiment, a method includes depositing an organic layer on the substrate, generating a nanostructure in the organic layer by a plasma etching process, applying a cover layer to the nanostructure, wherein the organic layer, the nanostructure and the cover layer together form a reflection-reducing structure, wherein the cover layer comprises an inorganic material or an organosilicon compound, and wherein the cover layer is at least 5 nm thick and performing a post-treatment after applying the cover layer, wherein a material of the organic layer is at least partially removed, decomposed or chemically converted, and wherein an effective refractive index n.sub.eff,2 of the reflection-reducing structure after the post-treatment is smaller than an effective refractive index n.sub.eff,1 of the reflection-reducing structure before the post-treatment.

The present disclosure generally relates to substrate processing methods, such as etching methods with noble gases at low temperatures. In an aspect, the method includes exposing a substrate, a first layer comprising a gas, and a fluorine-containing layer to energy to form a passivation layer while maintaining the substrate at conditions encompassing a triple point temperature of the gas, the substrate positioned in a processing region of a processing chamber. The method further includes etching the substrate with ions.

The invention relates to a silicon-based component with at least one chamfer formed from a method combining at least one oblique side wall etching step with a Bosch etching of vertical side walls, thereby enabling aesthetic improvement and improvement in the mechanical strength of components formed by micromachining a silicon-based wafer.

A chemical liquid treatment apparatus includes processing chambers; a chemical liquid feeding unit configured to cyclically feed a chemical liquid into the processing chambers; and a modifying unit. The modifying unit, when using a chemical liquid in which an effect thereof varies with a chemical liquid discharge time, is configured to calculate a variation of the effect of the chemical liquid based on the chemical liquid discharge time and is configured to modify the chemical liquid discharge time for each of the processing chambers based on the calculated variation of the effect of the chemical liquid and a cumulative time of the chemical liquid discharge time.