The present invention relates to a P-type high-performance thermoelectric material featuring reversible phase change, and a preparation method therefor. The thermoelectric material has a chemical composition of Cu.sub.2Se.sub.1-xI.sub.x, wherein 0<x0.08. The method comprises: weighing elemental copper metal, elemental selenium metal, and cuprous iodide according to the molar ratio (2x):(1x):x, and packaging them in a vacuum; raising the temperature to 1150-1170 C. in stages and performing a melting treatment for 12-24 hours; lowering the temperature to 600-700 C. in stages and then performing an annealing treatment for 5-7 days, the substances being cooled to room temperature in a furnace after the annealing treatment; and performing pressure sintering at 400-500 C.

The present invention relates to a P-type high-performance thermoelectric material featuring reversible phase change, and a preparation method therefor. The thermoelectric material has a chemical composition of Cu.sub.2Se.sub.1-xI.sub.x, wherein 0<x0.08. The method comprises: weighing elemental copper metal, elemental selenium metal, and cuprous iodide according to the molar ratio (2x):(1x):x, and packaging them in a vacuum; raising the temperature to 1150-1170 C. in stages and performing a melting treatment for 12-24 hours; lowering the temperature to 600-700 C. in stages and then performing an annealing treatment for 5-7 days, the substances being cooled to room temperature in a furnace after the annealing treatment; and performing pressure sintering at 400-500 C.