A solid electrolyte material comprises Li, T, X and A wherein T is at least one of P, As, Si, Ge, Al, Sb, W, and B; X is one or more halogens and/or N; A is one or more of S or Se. The solid electrolyte material has peaks at 14.9°±0.50°, 20.4°±0.50°, and 25.4°±0.50° in X-ray diffraction measurement with Cu—Kα(1,2)=1.5418A and may include glass ceramic and/or mixed crystalline phases.

A low-temperature high-performance thermoelectric material possesses a chemical formula of (Ag.sub.yCu.sub.2−y).sub.1−xTe.sub.1−zSe.sub.z, wherein −0.025≤x≤0.075, 0.6≤y≤1.4, 0<z≤0.25, diffraction peaks of a main phase of the thermoelectric material are indexed as a cubic structure at room temperature of 300 K, a highest ZT value between 300 K and 673 K is in range of 0.4 to 1.6, an average ZT value (ZT).sub.avg is in range of 0.2 to 1.4. The highest ZT value of this material at the room temperature is comparable to that of Bi.sub.2Te.sub.3, which is an excellent complement to existing low-temperature thermoelectric materials. At the same time, the present invention also indicates a new strategy to improve the low-temperature thermoelectric performance of Cu.sub.2X-based (here, X is S, Se, Te) materials, and lays a foundation for the application of Cu.sub.2X-based materials in the field of low-temperature thermoelectricity.

A method that includes selectively ejecting, from a first nozzle, a patterning material on to a surface of a substrate to define an area within to eject a first printable ammonium-based chalcogenometalate fluid; ejecting, from a second nozzle, the first printable ammonium-based chalcogenometalate fluid within the area defined by the patterning material to form a first layer of the printable ammonium-based chalcogenometalate fluid; and heating the first layer of printable ammonium-based chalcogenometalate fluid to dissipate the first printable ammonium-based chalcogenometalate fluid into a transition metal dichalcogenide having the form MX.sub.2.

The present disclosure relates to a hydrogen evolution apparatus including an AC power source, a semiconductor electrode and a counter electrode connected to the AC power source, an electrolyte in which the semiconductor electrode is immersed, and a light source which irradiates light on the semiconductor electrode, in which the semiconductor electrode includes a conductive substrate and n-type semiconductor particles dispersed on a p-type semiconductor matrix or p-type semiconductor particles dispersed on an n-type semiconductor matrix which is vertically grown from the conductive substrate.

The invention relates to a solid ionic conductor for a rechargeable non-aqueous electrochemical battery cell having the stoichiometric formula K(ASXX′).sub.p×q SO.sub.2, where K represents a cation from the group of the alkali metals with p=1, of the alkaline-earth metals with p=2 or of the zinc group with p=2, A represents an element from the third main group, S represents sulfur, selenium or tellurium, X and X′ represent a halogen, and the numerical value q is greater than 0 and less than or equal to 100.

Provided is a thermoelectric material which exhibits excellent thermoelectric characteristics at room temperature; a method for producing this thermoelectric material; and a thermoelectric power generation element using this thermoelectric material. In an embodiment of the present invention, a thermoelectric material contains an inorganic compound that contains magnesium (Mg), antimony (Sb) and/or bismuth (Bi), copper (Cu), and if necessary M (M is composed of at least one element that is selected from the group consisting of selenium (Se) and tellurium (Te)); and inorganic compound is represented by MgaSb.sub.2-b-cBi.sub.bM.sub.cCu.sub.d, wherein a, b, c and d satisfy 3≤a 3.5, 0≤b≤2, 0≤c≤0.06, 0≤d≤0.1, and (b+1)≤2.

The invention relates to a solid body of a compound of formula Zn.sub.1-t-eT.sub.tE.sub.eO.sub.1-yY.sub.y, wherein the compound has a wurtzite structure and wherein T represents one or more transition metals, selected from one or more of Mn, Cd, Cr, Fe, Co and Ni; E represents one or more alkaline earth metals, selected from one or more of Be, Mg, Ca, Sr and Ba; Y represents one or more chalcogens, selected from S, Se, Te; tis a value in the region of 0 to <1; e is a value from 0 to <1, and y is a value from 0 to <1.

Provided in this disclosure are oxidative dehydrogenation catalysts that include a mixed metal oxide having the empirical formula:

Mo.sub.1.0V.sub.0.12-0.49Te.sub.0.05-0.17Nb.sub.0.10-0.20O.sub.d

wherein d is a number to satisfy the valence of the oxide. The oxidative dehydrogenation catalyst is characterized by having XRD diffraction peaks (2θ degrees) at 22±0.2, 27±0.2, 28.0±0.2, and 28.3±0.1. The disclosure also provides methods of making the catalysts that include wet ball milling.

A compound semiconductor which has an improved thermoelectric performance index together with excellent electrical conductivity, and thus may be utilized for various purposes such as a thermoelectric conversion material of thermoelectric conversion devices, solar cells, and the like, and to a method for preparing the same.

The present disclosure discloses a p-type material of Formula I: AgSb.sub.1-xCd.sub.xTe.sub.2, wherein x is in a range of 0.01-0.07. It further discloses a process of preparation of the p-type material, and the use of the p-type material as a thermoelectric material.