A chalcogen-containing compound that exhibits low thermal conductivity and excellent thermoelectric properties, and exhibits excellent phase stability even at relatively low temperature, a method for preparing the same, and a thermoelectric element including the same.

A method embodiment involves preparing single metal or mixed transition metal chalcogenide using exfoliation of two or more different bulk transition metal dichalcogenides in a manner to form an intermediate hetero-layered transition metal chalcogenide structure, which can be treated to provide a single-phase transition metal chalcogenide.

A solid electrolyte material comprises Li, T, X and A wherein T is at least one of Sb, P, As, Si, Ge, Al, and B; X is one or more halogens or N; A is one or more of S or Se. The solid electrolyte material has peaks at 2θ=14.5°±0.50°, 16.8°±0.50°, 23.9°±0.50°, 28.1°±0.50°, and 32.5°±0.50 in X-ray diffraction measurement with Cu-Kα(1,2)=1.54064 Å and may include glass ceramic and/or mixed crystalline phases.

An alloyed halide double perovskite material, an alloyed halide double perovskite solar-cell absorber and solar cells constructed with such absorbers, the alloyed halide double perovskite material having the formula A.sub.2B.sub.1-aB′.sub.1-bD.sub.xX.sub.6, where A is an inorganic cation, an organic cation, a mixture of inorganic cations, a mixture of organic cations, or a mixture of one or more inorganic cations and one or more organic cations, where B is a metal, a mixture of metals, a metalloid, a mixture of metalloids, any mixture thereof, or is a vacancy, where B′ is a metal, a mixture of metals, a metalloid, a mixture of metalloids, any mixture thereof, or is a vacancy, where D is a dopant, and where X is a halide, a pseudohalide, a mixture of halides, a mixture of pseudohalides, or a mixture of halides and pseudohalides, and where x=a+b.

An ovonic threshold switch comprises a thin film composed essentially of Si, Ge, Se, As, and an amount of a chalcogen that is effective to passivate oxidation of the composition in the presence of water vapor, wherein the chalcogen is selected from the list consisting of: Te and S. In one or more embodiments, the chalcogen is S. In one or more embodiments, the chalcogen is Te. In one or more embodiments, the effective amount of the chalcogen is greater than 1% by atomic percent. In one or more embodiments, the effective amount of the chalcogen is less than 10% by atomic percent. In one or more embodiments, the composition of matter comprises 10% Si, 15% Ge, 40% Se, 30% As, and 5% chalcogen by atomic percent.

A dispersion that includes water and a light-emitting body dispersed in the water. The light-emitting body contains a nanoparticle of a AgInSe compound semiconductor, and a film to which hydrophilicity is imparted by ultrasonic irradiation on a surface of the nanoparticle. The film has a double structure having a first organic molecular film containing an alkylthiol and a second organic molecular film composed mainly of a fatty acid. The light-emitting body has an emission quantum yield of 10% or more, an emission intensity peak wavelength in the range of 650 to 1000 nm, and a half-width ΔH of 100 nm or less at the emission intensity peak wavelength.

A method may include ejecting, from a nozzle, a first printable ammonium-based chalcogenometalate fluid comprising a first dopant onto a substrate to form a layer of the first printable ammonium-based chalcogenometalate fluid; heating, at a first temperature, the layer of first printable ammonium-based chalcogenometalate fluid to dissipate the first printable ammonium-based chalcogenometalate fluid into a transition metal dichalcogenide having the form MX2 with the first dopant distributed therethrough; ejecting, from the nozzle, a second printable ammonium-based chalcogenometalate fluid comprising a second dopant onto the substrate to form a layer of the second printable ammonium-based chalcogenometalate fluid; and heating, at a second and higher temperature, the layers of first and second printable ammonium-based chalcogenometalate fluid.

Disclosed is a plastic semiconductor material and a preparation method thereof. The semiconductor material comprises an argentite-based compound represented by the following formula (I): Ag.sub.2-δX.sub.δS.sub.1-ηY.sub.η(I), in which 0≤δ<0.5, 0≤η<0.5, X is at least one of Cu, Au, Fe, Co, Ni, Zn, Ti, or V, and Y is at least one of N, P, As, Sb, Se, Te, O, Br, Cl, I, or F. The material can withstand certain deformations, similar to organic materials, and has excellent semiconductor properties with adjustable electrical properties, thereby enabling the preparation of high-performance flexible semiconductor devices.

A novel compound semiconductor that can be used for a solar battery, a thermoelectric material, and the like, and use thereof. The novel compound semiconductor may be represented by the following Chemical Formula: Nd.sub.xS.sub.yCo.sub.4Sb.sub.12-zQ.sub.z, wherein Q is one or more selected from the O, Se, or Te, 0<x<0.2, 0<y≤1, and 0<z<12.

Cesium-niobium-chalcogenide compounds and a semiconductor device are provided. The cesium-niobium-chalcogenide compound is selected from the group consisting of CsNbS.sub.3, CsNbSe.sub.3, and CsNbO.sub.x-3Q.sub.x, where Q is S or Se, and x is 1 or 2, and includes an edge-shared orthorhombic crystal structure. In one embodiment, the semiconductor device includes a cathode layer, an anode layer, and an active layer disposed between the cathode layer and the anode layer, and the active layer includes the cesium-niobium-chalcogenide compound.