Systems, devices, and methods related to or that employ chalcogenide memory components and compositions are described. A component of a memory cell, such as a selector device, storage device, or self-selecting memory device, may be made of a chalcogenide material composition. A chalcogenide material may have a composition that includes one or more elements from the boron group, such as boron, aluminum, gallium, indium, or thallium. The chalcogenide material, for instance, may have a composition of selenium, germanium, and at least one of boron, aluminum, gallium, indium, or thallium. The chalcogenide material may in some cases also include arsenic, but may in some cases lack arsenic.

A method of producing a kesterite material of CZTS, CZTSe or CZTSSe type, including the steps of: a) preparing an acidic solution by dissolving copper and zinc salts in water in desired molar ratio, b) preparing a basic solution by dissolving an alkali metal stannate together with an alkali metal carbonate or an alkali metal hydrogen carbonate or an alkali metal hydroxide or a combination thereof, and optionally with an alkali metal selenate or an alkali metal selenite or a mixture thereof, c) carrying out a precipitation reaction by mixing the acidic and the basic solution, d) drying the precipitate thereby providing a precursor for the kesterite material, and e) sulfurizing the precursor of step d to provide the kesterite material. Also, a precursor for a kesterite material of CZTS, CZTSe or CZTSSe type.

A chalcogen-containing compound of the following chemical formula which exhibits an excellent thermoelectric performance index (ZT) through an increase in power factor and a decrease in thermal conductivity, a method for preparing the same, and a thermoelectric element including the same: M.sub.yV.sub.1-ySn.sub.xSb.sub.2Te.sub.x+3, wherein V is vacancy, M is at least one alkali metal, x≥6, and 0<y≤0.4.

The invention relates to Chevrel-phase materials and methods of preparing these materials utilizing a precursor approach. The Chevrel-phase materials are useful in assembling electrodes, e.g., cathodes, for use in electrochemical cells, such as rechargeable batteries. The Chevrel-phase materials have a general formula of Mo.sub.6Z.sub.8 (Z=sulfur) or Mo.sub.6Z.sup.1.sub.8-yZ.sup.2.sub.y (Z.sup.1=sulfur; Z.sup.2=selenium), and partially cuprated Cu.sub.1Mo.sub.6S.sub.8 as well as partially de-cuprated Cu.sub.1-xMg.sub.xMo.sub.6S.sub.8 and the precursors have a general formula of M.sub.xMo.sub.6Z.sub.8 or M.sub.xMo.sub.6Z.sup.1.sub.8-yZ.sup.2.sub.y, M=Cu. The cathode containing the Chevrel-phase material in accordance with the invention can be combined with a magnesium-containing anode and an electrolyte.

Provided is a thin film including Mo.sub.1-xW.sub.xTe.sub.2 stacked in a plurality of layers. The thin film has a thickness of about 1 nm to about 100 nm in a stacking direction, has a symmetric lattice structure at a temperature higher than a threshold temperature, and has an asymmetric lattice structure at a temperature equal to or lower than the threshold temperature.

In one example in accordance with the present disclosure, a printable ammonium-based chalcogenometalate fluid is described. The fluid includes an ammonium-based chalcogenometalate precursor. The printable ammonium-based chalcogenometalate fluid also includes an aqueous solvent and water. The printable ammonium-based chalcogenometalate fluid is printed onto a substrate. In the presence of heat, the aqueous solvent, water, and ammonium-based chalcogenometalate precursor break down to form a transition metal dichalcogenide having the form MX.sub.2.

An ovonic threshold switch comprises a thin film composed essentially of Si, Ge, Se, As, and an amount of a chalcogen that is effective to passivate oxidation of the composition in the presence of water vapor, wherein the chalcogen is selected from the list consisting of: Te and S. In one or more embodiments, the chalcogen is S. In one or more embodiments, the chalcogen is Te. In one or more embodiments, the effective amount of the chalcogen is greater than 1% by atomic percent. In one or more embodiments, the effective amount of the chalcogen is less than 10% by atomic percent. In one or more embodiments, the composition of matter comprises 10% Si, 15% Ge, 40% Se, 30% As, and 5% chalcogen by atomic percent.

The invention relates to a solid body of a compound of formula Zn.sub.1-t-eT.sub.tE.sub.eO.sub.1-yY.sub.y, wherein the compound has a wurtzite structure and wherein T represents one or more transition metals, selected from one or more of Mn, Cd, Cr, Fe, Co and Ni; E represents one or more alkaline earth metals, selected from one or more of Be, Mg, Ca, Sr and Ba; Y represents one or more chalcogens, selected from S, Se, Te; tis a value in the region of 0 to <1; e is a value from 0 to <1, and y is a value from 0 to <1.

A novel catalyst and process for producing a mixed oxide material containing molybdenum, vanadium, tellurium and niobium is disclosed. The material can be used as a catalyst for the oxidative dehydrogenation of ethane to ethene or the oxidation of propane to acrylic acid.

A chalcogen-containing compound of the following Chemical Formula 1 which exhibits excellent phase stability even at a low temperature, particularly at a temperature corresponding to an operating temperature of a thermoelectric element, and also exhibits a significantly superior power factor and thermoelectric performance index due to its excellent electrical conductivity and low thermal conductivity caused by its unique crystal lattice structure, a method for preparing the same, and a thermoelectric element including the same. [Chemical Formula 1]—V.sub.1-2xSn.sub.4Bi.sub.2-xAg.sub.3xSe.sub.7, wherein V is vacancy and 0<x<0.5.