The present invention provides a method for manufacturing a dopant composition-nanomaterial composite, which method makes it possible to simply and efficiently change a Seebeck coefficient value of a nanomaterial. This manufacture method of the present invention includes the steps of: (a) putting a dopant composition in contact with a nanomaterial in a solvent; (b) drying a mixture obtained in the step (a) so as to remove the solvent, the dopant composition containing a given anion and an onium ion.

The present invention provides a method for manufacturing a dopant composition-nanomaterial composite, which method makes it possible to simply and efficiently change a Seebeck coefficient value of a nanomaterial. This manufacture method of the present invention includes the steps of: (a) putting a dopant composition in contact with a nanomaterial in a solvent; (b) drying a mixture obtained in the step (a) so as to remove the solvent, the dopant composition containing a given anion and an onium ion.

Selenium nanomaterials and methods of making and using selenium nanomaterials are disclosed herein. In some embodiments, the selenium nanomaterials can advantageously be used, for example, for removing mercury from air and/or water.

Materials, devices, methods of use and fabrication thereof are disclosed. The materials are particularly well suited for application in superconducting devices and quantum computing, due to ability to avoid undesirable effects from inherent noise and decoherence. The materials are formed from select isotopes having zero nuclear spin into a single crystal-phase film or layer of thickness depending on the desired application of the resulting device. The film/layer may be suspended or disposed on a substrate. The isotopes may be enriched from naturally-occurring sources of isotopically mixed elemental material(s). The single crystal is preferably devoid of structural defects such as grain boundaries, inclusions, impurities and lattice vacancies. Device configurations may be formed from the layer according to a predetermined pattern using lithographic and/or milling techniques. An optional protective layer may be deposited on some or all of the device to avoid formation of oxides and/or patinas on surfaces of the device.

Materials, devices, methods of use and fabrication thereof are disclosed. The materials are particularly well suited for application in superconducting devices and quantum computing, due to ability to avoid undesirable effects from inherent noise and decoherence. The materials are formed from select isotopes having zero nuclear spin into a single crystal-phase film or layer of thickness depending on the desired application of the resulting device. The film/layer may be suspended or disposed on a substrate. The isotopes may be enriched from naturally-occurring sources of isotopically mixed elemental material(s). The single crystal is preferably devoid of structural defects such as grain boundaries, inclusions, impurities and lattice vacancies. Device configurations may be formed from the layer according to a predetermined pattern using lithographic and/or milling techniques. An optional protective layer may be deposited on some or all of the device to avoid formation of oxides and/or patinas on surfaces of the device.

This disclosure provides systems, methods, and apparatus related to surface doping of nanostructures. In one aspect a plurality of nanostructures is fabricated with a solution-based process using a solvent. The plurality of nanostructures comprises a semiconductor. Each of the plurality of nanostructures has a surface with capping species attached to the surface. The plurality of nanostructures is mixed in the solvent with a dopant compound that includes doping species. During the mixing the capping species on the surfaces of the plurality of nanostructures are replaced by the doping species. Charge carriers are transferred between the doping species and the plurality of nanostructures.

This disclosure provides systems, methods, and apparatus related to surface doping of nanostructures. In one aspect a plurality of nanostructures is fabricated with a solution-based process using a solvent. The plurality of nanostructures comprises a semiconductor. Each of the plurality of nanostructures has a surface with capping species attached to the surface. The plurality of nanostructures is mixed in the solvent with a dopant compound that includes doping species. During the mixing the capping species on the surfaces of the plurality of nanostructures are replaced by the doping species. Charge carriers are transferred between the doping species and the plurality of nanostructures.

Provided is a method for catalytically reducing selenium. Hydrogen peroxide is used as a catalyst, and a reducer is added to a hexavalent-selenium-containing solution for reaction so as to reduce the selenium to elemental selenium, wherein the standard oxidation-reduction potential of the reducer is lower than the standard oxidation-reduction potential of the conversion of the hexavalent selenium to elemental selenium. The present method can further reduce a hexavalent-selenium element-containing selenic acid or selenate solution to an elemental selenium product in one step. In the present method, the hydrogen peroxide effectively lowers the descending speed of the reduction potential of the solution while having a catalytic effect, so that the reduction reaction process is carried out gently, thereby effectively preventing the selenium in the solution from overreducing to generate negatively bivalent selenium ions or compounds thereof, and solving problems such as a low recovery rate caused by selenium overreduction.

Provided is a method for catalytically reducing selenium. Hydrogen peroxide is used as a catalyst, and a reducer is added to a hexavalent-selenium-containing solution for reaction so as to reduce the selenium to elemental selenium, wherein the standard oxidation-reduction potential of the reducer is lower than the standard oxidation-reduction potential of the conversion of the hexavalent selenium to elemental selenium. The present method can further reduce a hexavalent-selenium element-containing selenic acid or selenate solution to an elemental selenium product in one step. In the present method, the hydrogen peroxide effectively lowers the descending speed of the reduction potential of the solution while having a catalytic effect, so that the reduction reaction process is carried out gently, thereby effectively preventing the selenium in the solution from overreducing to generate negatively bivalent selenium ions or compounds thereof, and solving problems such as a low recovery rate caused by selenium overreduction.

A method for recycling copper indium gallium selenium materials comprises the steps of leaching by using sulfuric acid and hydrogen peroxide, reduction of selenium by using sulfur dioxide, separation of copper by using hydrolysis, alkali separation of indium and gallium, replacement of indium, hydrolysis of gallium, and the like. Leaching is carried out by using sulfuric acid in cooperation with hydrogen peroxide, so that the leaching rate is greatly improved, and acid gas pollution is reduced; PH differential copper is separated by using metal ion hydrolysis, so that costs are low; and in addition, alkali separation of gallium is carried out, separation between indium and gallium can be implemented by merely adjusting the PH of a solution, the separation effect is good, the purities of obtained indium and gallium products are high.