Patent classifications
C01B21/082
Phosphor and light-emitting equipment using phosphor
Phosphors include a CaAlSiN.sub.3 family crystal phase, wherein the CaAlSiN.sub.3 family crystal phase comprises at least one element selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.
Carbide-derived carbon manufactured by using heat treatment at vacuum and method thereof
Disclosed is a method of preparing a carbide-derived carbon having high ion mobility for use in a lithium battery anode material, a lithium air battery electrode, a supercapacitor electrode, and a flow capacitor electrode, including thermally treating a carbide compound in a vacuum, thus obtaining a vacuum-treated carbide compound; and thermochemically reacting the vacuum-treated carbide compound with a halogen element-containing gas, thus extracting the element other than carbon from the vacuum-treated carbide compound, wherein annealing can be further performed after thermochemical reaction. This carbide-derived carbon has a small pore distribution, dense graphite fringe, and a large lattice spacing and thus high ion mobility, compared to conventional carbide-derived carbon obtained only by thermochemical reaction with a halogen element-containing gas.
Adhesive silicon oxynitride film
The invention relates generally to use of a silicon oxynitride film which exhibits desirable physical and chemical properties; superiority in adhesion to metals including noble metals and other metals, transparent conductive oxides, and semiconductor materials compared to silicon dioxide and silicon nitride; is wet-etchable, dry-etchable, or both; and operates as a high-performance overcoat barrier dielectric. The silicon oxynitride film meets performance requirements via a process that does not require an adhesion layer for deposition, and does not contaminate, obscure, or damage the device through incorporation or processing of additional adhesion layers.
Gallium oxynitride-zinc oxide photoelectrode for solar water splitting
A GaON/ZnO photoelectrode involving a nanoarchitectured photocatalytic material deposited onto a surface of a conducting substrate, and the nanoarchitectured photocatalytic material containing gallium oxynitride nanoparticles interspersed in zinc oxide nanoparticles, as well as methods of preparing the GaON/ZnO photoelectrode. A method of using the GaON/ZnO photoelectrode for solar water electrolysis is also provided.
Hydridosilapyrroles, hydridosilaazapyrroles, thiasilacyclopentanes, method for preparation thereof, and reaction products therefrom
Hydridosilapyrroles and hydridosilaazapyrrole are a new class of heterocyclic compounds having a silicon bound to carbon and nitrogen atoms within the ring system and one or two hydrogen atoms on the silicon atom. The compounds have formula (I): ##STR00001##
in which R is a substituted or unsubstituted organic group and R′ is an alkyl group. These compounds react with a variety of organic and inorganic hydroxyl groups by a ring-opening reaction and may be used to produce silicon nitride or silicon carbonitride films.
Narrow band emitting SiAlON phosphor
This specification discloses a method of enhancing the stability and performance of Eu.sup.2+ doped narrow band red emitting phosphors. The resulting phosphor compositions are characterized by crystallizing in ordered structure variants of the UCr.sub.4C.sub.4 crystal structure type and having a composition of AE.sub.1−xLi.sub.3−2yAl.sub.1+2y−zSi.sub.zO.sub.4−4y−zN.sub.4y+z:EU.sub.x(AE=Ca, Sr, Ba; 0<x<0.04, 0≤y<1, 0<z<0.05, y+z≤1). It is believed that the formal substitution (Al,O).sup.+ by (Si,N).sup.+ reduces the concentration of unwanted Eu.sup.3+ and thus enhances properties of the phosphor such as stability and conversion efficiency.
Oxynitride phosphor powder, silicon nitride powder for production of oxynitride phosphor powder, and production method of oxynitride phosphor powder
An oxynitride phosphor powder contains α-SiAlON and aluminum nitride, obtained by mixing a silicon source, an aluminum source, a calcium source, and a europium source to produce a composition represented by a compositional formula: Ca.sub.x1Eu.sub.x2Si.sub.12−(y+z)Al.sub.(y+z)O.sub.zN.sub.16−z (wherein x1, x2, y and z are 0<x1≦3.40, 0.05≦x2≦0.20, 4.0≦y≦7.0, and 0≦z≦1), and firing the mixture.
SINTERED MATERIAL, TOOL INCLUDING SINTERED MATERIAL, AND SINTERED MATERIAL PRODUCTION METHOD
To provide a sintered material having excellent oxidation resistance, as well as excellent abrasion resistance and chipping resistance. A sintered material containing a first compound formed of Ti, Al, Si, O, and N is provided.
N—H free and Si-rich per-hydridopolysilzane compositions, their synthesis, and applications
Solid or liquid N—H free, C-free, and Si-rich perhydropolysilazane compositions comprising units having the following formula [—N(SiH.sub.3).sub.x(SiH.sub.2—).sub.y], wherein x=0, 1, or 2 and y=0, 1, or 2 when x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.
DEGRADABLE RESIN MOLDING AND PRODUCTION METHOD FOR DEGRADABLE RESIN MOLDING
Disclosed is a degradable film (1) in which a barrier layer (3) is disposed on a surface of a water-soluble polymer layer (2). The water-soluble polymer layer (2) is made of a water-soluble polymer such as polyvinyl alcohol or polyvinyl pyrrolidone. The barrier layer (3) is made of silicon oxide or silicon oxynitride. The barrier layer (3) is formed on the water-soluble polymer layer (2) by a CVD process with the supply of a raw material gas containing a precursor of a substance that forms the barrier layer (3), an ozone gas with an oxygen concentration of 20 vol % or higher and an unsaturated hydrocarbon gas to the water-soluble polymer layer (2).