Provided is a barrier film, comprising: a base layer; and an inorganic layer including Si, N, and O, wherein the inorganic layer has a thickness of 600 nm or less, and the film has a water vapor transmission rate of 0.5×10.sup.−3 g/m.sup.2.Math.day as measured under conditions of a temperature of 38° C. and 100% relative humidity. The barrier film has excellent barrier properties and optical properties and can be used for electronic products sensitive to moisture.

Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O.sub.2 and NH.sub.3 co-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.

A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N—H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N—H free repeating units having the formula [—N(SiH3)x(SiH2-)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.

Methods for atomic layer deposition (ALD) of plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formulae (Ia), (Ib), (Ic), (Id), (IX), or (X)

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wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, and R.sup.8 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, and substituted or unsubstituted vinyl, X is silicon (Si) or carbon (C), Y is carbon (C) or oxygen (O), R.sup.9, R.sup.10, R.sup.11, R.sup.12 R.sup.13, R.sup.14, R.sup.15, and R.sup.16 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; and exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate, the oxidant comprising one or more of a carboxylic acid, an aldehyde, a ketone, an ethenediol, an oxalic acid, a glyoxylic acid, a peroxide, an alcohol, and a glyoxal.

Aluminum oxynitride (AlON) powder, a synthesis method thereof by direct nitridation under high pressure and use thereof, which belongs to the field of ceramic powder are presented. In the method, pure-phase AlON powder is synthesized by direct nitridation under high pressure with aluminum powder and alumina powder as starting materials. The powder has a spherical-like morphology, with a particle size ranging from 5 μm to 15 μm. The powder has good dispersibility and uniformity, and higher sintering activity. AlON transparent ceramic (1.2 mm thick) prepared from the AlON powder has a linear transmittance of more than 84%. The batch yield is on kilogram-scale; therefore, the method is suitable for large-scale production of the AlON powder.

An embodiment of an apparatus may include a substrate and a semiconductor structure disposed on the substrate, where the semiconductor structure comprises a plurality of layers of material and where at least one layer of the plurality of layers of material comprises carbon-nitride-carbon (CNC). Other embodiments are disclosed and claimed.

An embodiment of an apparatus may include a substrate and a semiconductor structure disposed on the substrate, where the semiconductor structure comprises a plurality of layers of material and where at least one layer of the plurality of layers of material comprises carbon-nitride-carbon (CNC). Other embodiments are disclosed and claimed.

A phosphor having the general formula EA.sub.7A.sub.2T1.sub.t1T2.sub.t2 T3.sub.t3N.sub.nO.sub.o:RE. EA is selected from the group of divalent elements. A is selected from the group of monovalent elements. T1 is selected from the group of trivalent elements. T2 is selected from the group of tetravalent elements. T3 is selected from the group of pentavalent elements. RE is an activator element. 16+3 t1+4 t2+5 t3−3n−2 o=0. t1+t2+t3=5; n+o=16; 0≤t1≤4; 0≤t2≤5; 0≤t3≤5; 0≤n≤9; 7≤o≤16.

Ligand-capped inorganic particles, films composed of the ligand-capped inorganic particles, and methods of patterning the films are provided. Also provided are electronic, photonic, and optoelectronic devices that incorporate the films. The ligands that are bound to the inorganic particles are composed of a cation/anion pair. The anion of the pair is bound to the surface of the particle and at least one of the anion and the cation is photosensitive.

A window module includes: a window; a first anti-reflection layer disposed on the window; and a second anti-reflection layer disposed on the first anti-reflection layer, including magnesium fluoride and having a refractive index smaller than a refractive index of the first anti-reflection layer.