The present invention relates to a catalyst system for flow reactors which is characterized by the sequence of the noble metal-containing alloys used of the catalyst networks forming the catalyst system. By using palladium alloys for a second and third catalyst network group, the platinum content of the catalyst system can be kept relatively low overall. In addition, the invention relates to a method for catalytic combustion of ammonia, in which a fresh gas containing at least ammonia is conducted through a catalyst system.

The present invention relates to a catalyst system for flow reactors which is characterized by the sequence of the noble metal-containing alloys used of the catalyst networks forming the catalyst system. By using palladium alloys for a second and third catalyst network group, the platinum content of the catalyst system can be kept relatively low overall. In addition, the invention relates to a method for catalytic combustion of ammonia, in which a fresh gas containing at least ammonia is conducted through a catalyst system.

Methods for atomic layer deposition (ALD) of plasma enhanced atomic layer deposition (PEALD) of low-κ films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formulae (Ia), (Ib), (Ic), (Id), (IX), or (X)

##STR00001##

wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, and R.sup.8 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, and substituted or unsubstituted vinyl, X is silicon (Si) or carbon (C), Y is carbon (C) or oxygen (O), R.sup.9, R.sup.10, R.sup.11, R.sup.12 R.sup.13, R.sup.14, R.sup.15, and R.sup.16 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; and exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate, the oxidant comprising one or more of a carboxylic acid, an aldehyde, a ketone, an ethenediol, an oxalic acid, a glyoxylic acid, a peroxide, an alcohol, and a glyoxal.

Hydridosilapyrroles and hydridosilaazapyrrole are a new class of heterocyclic compounds having a silicon bound to carbon and nitrogen atoms within the ring system and one or two hydrogen atoms on the silicon atom. The compounds have formula (I): ##STR00001##
in which R is a substituted or unsubstituted organic group and R′ is an alkyl group. These compounds react with a variety of organic and inorganic hydroxyl groups by a ring-opening reaction and may be used to produce silicon nitride or silicon carbonitride films.

A europium-doped β-sialon phosphor, in which, when the ratio of an aluminum element at a depth of 8 nm from the surface of the phosphor, which is obtained by X-ray photoelectron spectroscopy, is indicated by P.sub.8 [at %], and the ratio of an aluminum element at a depth of 80 nm from the surface of the phosphor is indicated by P.sub.80 [at %], P.sub.8/P.sub.80≤0.9 is satisfied. A light emitting device containing this β-sialon phosphor.

A β-type sialon phosphor represented by the following expression 1, in which D50 is 10 μm or less, and values of D10, D50, and D90 satisfy a relationship of the following expression 2 with respect to D10, D50, and D90 (each unit is [μm]) on a volume frequency basis as measured according to a laser diffraction/scattering method. Expression 1: Si.sub.12-aAl.sub.aO.sub.bN.sub.16-b:Eu.sub.x (wherein 0<a≤3; 0<b≤3; 0<x≤0.1), expression 2: (D90−D10)/D50<1.6 (wherein the D10, D50, and D90 (each unit is [μm]) on a volume frequency basis as measured according to the laser diffraction/scattering method.

A β-type sialon phosphor represented by the following expression 1, in which D50 is 10 μm or less, and values of D10, D50, and D90 satisfy a relationship of the following expression 2 with respect to D10, D50, and D90 (each unit is [μm]) on a volume frequency basis as measured according to a laser diffraction/scattering method. Expression 1: Si.sub.12-aAl.sub.aO.sub.bN.sub.16-b:Eu.sub.x (wherein 0<a≤3; 0<b≤3; 0<x≤0.1), expression 2: (D90−D10)/D50<1.6 (wherein the D10, D50, and D90 (each unit is [μm]) on a volume frequency basis as measured according to the laser diffraction/scattering method.

Methods for atomic layer deposition (ALD) of plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formulae (Ia), (Ib), (Ic), (Id), (IX), or (X) ##STR00001##
wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, and R.sup.8 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, and substituted or unsubstituted vinyl, X is silicon (Si) or carbon (C), Y is carbon (C) or oxygen (O), R.sup.9, R.sup.10, R.sup.11, R.sup.12 R.sup.13, R.sup.14, R.sup.15, and R.sup.16 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; and exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate, the oxidant comprising one or more of a carboxylic acid, an aldehyde, a ketone, an ethenediol, an oxalic acid, a glyoxylic acid, a peroxide, an alcohol, and a glyoxal.

An α-sialon phosphor particle containing Eu. At least one minute recess is formed on a surface of the α-sialon phosphor particle. The α-sialon phosphor particle is preferably produced by undergoing a raw material mixing step, a heating step, a pulverizing step, and an acid treatment step.

A poorly crystalline mixed metal manganese oxide material. The mixed metal manganese oxide material may be used for making a cathode for a rechargeable battery. Generally, the mixed metal manganese oxide includes: manganese oxide; copper, silver, gold, or a combination thereof; a first additional cation selected from the group consisting of: bismuth, lead, and mixtures thereof; and a second additional cation selected from the group consisting of: lithium, sodium, potassium, cesium, rubidium, beryllium, magnesium, calcium, strontium, barium, NR.sub.4.sup.+, or a combination thereof, with R being, hydrogen, an alkyl group, an aryl group, or combinations thereof. The amorphous composition has an essentially amorphous x-ray powder diffraction pattern.