Synthesis of silanes with more than three silicon atoms are disclosed (i.e., (Si.sub.nH.sub.(2n+2) with n=4-100). More particularly, the disclosed synthesis methods tune and optimize the isomer ratio by selection of process parameters such as temperature, residence time, and the relative amount of starting compounds, as well as selection of proper catalyst. The disclosed synthesis methods allow facile preparation of silanes containing more than three silicon atoms and particularly, the silanes containing preferably one major isomer. The pure isomers and isomer enriched mixtures are prepared by catalytic transformation of silane (SiH.sub.4), disilane (Si.sub.2H.sub.6), trisilane (Si.sub.3H.sub.8), and mixtures thereof.

Deposition methods may prevent or reduce crystallization of silicon in a deposited amorphous silicon film that may occur after annealing at high temperatures. The crystallization of silicon may be prevented by doping the silicon with an element. The element may be boron, carbon, or phosphorous. Doping above a certain concentration for the element prevents substantial crystallization at high temperatures and for durations at or greater than 30 minutes. Methods and devices are described.

Nano-wire growth processes, nano-wires, and articles having nano-wires are disclosed. The nano-wire growth process includes trapping growth-inducing particles on a substrate, positioning the substrate within a chamber, closing the chamber, applying a vacuum to the chamber, introducing a precursor gas to the chamber, and thermally decomposing the precursor gas. The thermally decomposing of the precursor gas grows nano-wires from the growth-inducing particles. The nano-wires and the articles having the nano-wires are produced by the nano-wire growth process.

Silicon-containing materials along with process for producing and uses for the same. The process includes reacting the silicon-containing materials in a fluidized bed reactor by deposition of silicon from at least one silicon precursor in pores and on the surface of porous particles. A fluidizing gas stream is provided within the fluidized bed reactor that is fully or partly induced to oscillate in a pulsed manner and propagates in the form of a wave and acts on the fluidized bed so as to form a homogeneously fluidized bed as a pulsed gas stream so as to form a homogeneously fluidized bed having a fluidization index FI of at least 0.95. Where the fluidizing gas stream has a superficial velocity which is above a measured minimum fluidization velocity of the pulsed gas stream and where the pulsation is combined with mechanical stirring as a further fluidizing aid.

A method for producing an oligosilane which includes a reaction step of producing an oligosilane by dehydrogenative coupling of hydrosilane. The reaction step is carried out in the presence of a catalyst containing at least one transition element selected from the group consisting of Periodic Table group 3 transition elements, group 4 transition elements, group 5 transition elements, group 6 transition elements, and group 7 transition elements. Also disclosed is a method for producing a catalyst for dehydrogenative coupling that produces an oligosilane by dehydrogenative coupling of hydrosilane.

A method for producing an oligosilane which includes a reaction step of producing an oligosilane by dehydrogenative coupling of hydrosilane. The reaction step is carried out in the presence of a catalyst containing at least one transition element selected from the group consisting of Periodic Table group 3 transition elements, group 4 transition elements, group 5 transition elements, group 6 transition elements, and group 7 transition elements. Also disclosed is a method for producing a catalyst for dehydrogenative coupling that produces an oligosilane by dehydrogenative coupling of hydrosilane.

Triphenylgermylsilane (Ph.sub.3GeSiH.sub.3) is useful for the production of germanium-silicon layers (GeSi) or as transfer agent of silane groups (SiH.sub.3). Further, a method describes the production of triphenylgermylsilane (Ph.sub.3GeSiH.sub.3) by reducing trichlorosilyl-triphenylgermane (Ph.sub.3GeSiCl.sub.3) with a hydride in solution, and another method describes the production of trichlorosilytrichlorogermane (Cl.sub.3GeSiCl.sub.3) by reacting trichlorosilyltriphenyigermane (Ph.sub.3GeSiCl.sub.3) with hydrogen chloride (HCl) in the presence of AlCl.sub.3 in solution. In addition, trichlorosilyltrichlorogermane is also used for the production of germanium-silicon layers (GeSi).

Triphenylgermylsilane (Ph.sub.3GeSiH.sub.3) is useful for the production of germanium-silicon layers (GeSi) or as transfer agent of silane groups (SiH.sub.3). Further, a method describes the production of triphenylgermylsilane (Ph.sub.3GeSiH.sub.3) by reducing trichlorosilyl-triphenylgermane (Ph.sub.3GeSiCl.sub.3) with a hydride in solution, and another method describes the production of trichlorosilytrichlorogermane (Cl.sub.3GeSiCl.sub.3) by reacting trichlorosilyltriphenyigermane (Ph.sub.3GeSiCl.sub.3) with hydrogen chloride (HCl) in the presence of AlCl.sub.3 in solution. In addition, trichlorosilyltrichlorogermane is also used for the production of germanium-silicon layers (GeSi).

Synthesis of silanes with more than three silicon atoms are disclosed (i.e., (Si.sub.nH.sub.(2n+2) with n=4-100). More particularly, the disclosed synthesis methods tune and optimize the isomer ratio by selection of process parameters such as temperature, residence time, and the relative amount of starting compounds, as well as selection of proper catalyst. The disclosed synthesis methods allow facile preparation of silanes containing more than three silicon atoms and particularly, the silanes containing preferably one major isomer. The pure isomers and isomer enriched mixtures are prepared by catalytic transformation of silane (SiH.sub.4), disilane (Si.sub.2H.sub.6), trisilane (Si.sub.3H.sub.8), and mixtures thereof.

Synthesis of silanes with more than three silicon atoms are disclosed (i.e., (Si.sub.nH.sub.(2n+2) with n=4-100). More particularly, the disclosed synthesis methods tune and optimize the isomer ratio by selection of process parameters such as temperature, residence time, and the relative amount of starting compounds, as well as selection of proper catalyst. The disclosed synthesis methods allow facile preparation of silanes containing more than three silicon atoms and particularly, the silanes containing preferably one major isomer. The pure isomers and isomer enriched mixtures are prepared by catalytic transformation of silane (SiH.sub.4), disilane (Si.sub.2H.sub.6), trisilane (Si.sub.3H.sub.8), and mixtures thereof.