The malleable ceramics taught in this application are formed from silica or silicon dioxide and transition metal compounds comprising titanium dioxide, iron (II) oxide, manganese (II) oxide, cobalt (II) oxide (MO) or salts thereof in a process of sintering or melting together in a suitable crucible within a specific mol ratio. The selected M/Si mol ratio comprises 1.6/1.0 to 1.9/1.0.

These materials sinter above 1,100° C., where sintered parts exhibit densities near 3 grams/cubic centimeter and melt at higher temperatures. Thus, these materials form in a temperature range comprising 1,100° C. to 1,800° C. Malleable ceramic materials prepared as described herein deform when struck firmly with a hammer and do not fracture. Repeated striking increases the deformation or denting just like a piece of low alloy steel.

A method for reducing odor, by providing a colloidal dispersion of particles of silica having a particle size of from 3 nm to 100 nm, said particles having ions of one or more metals selected from copper, silver, zinc and iron adsorbed at the particle surface, and bringing at least one of said particles into contact with an odorous compound; and/or providing an aqueous silicate solution containing metal ions selected from ions of copper, silver, zinc and iron, and bringing at least one metal ion-carrying silicate particle formed in the solution into contact with an odorous compound. A composition for use in such a method and a product treated by such a composition.

The present invention provides a water induced crystallization process (WI-Process) to convert Olivine to Iddingsite in a highly oxidizing environment under low pressure and temperatures less than 200° C. and preferably higher than 70° C., optionally in the presence of catalysts accompanied by the process including Oleic acid, Amino acid and there derivatives such as Triethylamine either alone or in combination

The present invention relates to a nanomaterial comprising a nanoclay having a layered structure and carbon nanotubes being intercalated between layers of the layered of the nanoclay, and manufacturing method thereof.

The disclosure relates to the inherently selective mixed oxide deposition of a dielectric film on non-metallic substrates without concomitant growth on metallic substrates using a sequence of exposure to metal alkyl, heteroatom silacyclic compound, and water. The resulting films show much higher growth rates than corresponding metal oxide and inherent selectivity towards non-metallic surfaces. Films as thick as 14 nm can be grown on dielectric substrates such as thermal oxide and silicon nitride without any growth observed on metallic films such as copper and without the use of an inhibitor. Such dielectric-on-dielectric (DoD) growth is a critical element of many proposed fabrication schemes for future semiconductor device fabrication such as fully self-aligned vias.

The disclosure relates to the inherently selective mixed oxide deposition of a dielectric film on non-metallic substrates without concomitant growth on metallic substrates using a sequence of exposure to metal alkyl, heteroatom silacyclic compound, and water. The resulting films show much higher growth rates than corresponding metal oxide and inherent selectivity towards non-metallic surfaces. Films as thick as 14 nm can be grown on dielectric substrates such as thermal oxide and silicon nitride without any growth observed on metallic films such as copper and without the use of an inhibitor. Such dielectric-on-dielectric (DoD) growth is a critical element of many proposed fabrication schemes for future semiconductor device fabrication such as fully self-aligned vias.

The present disclosure discloses a method for growing a crystal in oxygen atmosphere. The method includes compensating a weight of a reactant, introducing a flowing gas, improving a volume ratio of oxygen during a cooling process, providing a heater in a temperature field, and optimizing parameters. According to the method, cracking and component deviation of the crystal during a crystal growth process, and without oxygen free vacancy can be solved. The method for growing the crystal has excellent repeatability and crystal performance consistency.

The present disclosure discloses a method for growing a crystal in oxygen atmosphere. The method includes compensating a weight of a reactant, introducing a flowing gas, improving a volume ratio of oxygen during a cooling process, providing a heater in a temperature field, and optimizing parameters. According to the method, cracking and component deviation of the crystal during a crystal growth process, and without oxygen free vacancy can be solved. The method for growing the crystal has excellent repeatability and crystal performance consistency.

The invention relates to a scintillation material of rare earth orthosilicate doped with a strong electron-affinitive element and its preparation method and application thereof. The chemical formula of the scintillation material of rare earth orthosilicate doped with the strong electron-affinitive element is: RE.sub.2(1−x−y+δ/2)Ce.sub.2xM.sub.(2y−δ)Si.sub.(1−δ)M.sub.δO.sub.5. In the formula, RE is rare earth ions and M is strong electron-affinitive doping elements; the value of x is 0<x≤0.05, the value of y is 0<y≤0.015, and the value of δ is 0≤δ≤10−4; and M is selected from at least one of tungsten, lead, molybdenum, tellurium, antimony, bismuth, mercury, silver, nickel, indium, thallium, niobium, titanium, tantalum, tin, cadmium, technetium, zirconium, rhenium, and gallium Ga.

A catalyst includes at least one element X selected from the group consisting of Groups 3 to 6 of the Periodic Table, and at least one element Z selected from the group consisting of Group 14 elements. At least one diffraction peak is observed in a low angle range of θ=6° or less in an X-ray diffraction profile observed using X-ray diffraction. The at least one diffraction peak has a ratio (I/H) of a peak intensity I to a half width at half maximum H of the diffraction peak of 5000 or more.