C01F7/02

Method for producing metal oxide film and method for producing transistor
09799510 · 2017-10-24 · ·

Provided is a technology for efficiently obtaining a metal oxide film having good adhesiveness. A method of producing a metal oxide film includes: an application step of applying a solution containing an organic metal complex onto a substrate; an ozone exposure step of exposing the resultant coating film to ozone; and a heating step of heating the coating film.

Method for producing metal oxide film and method for producing transistor
09799510 · 2017-10-24 · ·

Provided is a technology for efficiently obtaining a metal oxide film having good adhesiveness. A method of producing a metal oxide film includes: an application step of applying a solution containing an organic metal complex onto a substrate; an ozone exposure step of exposing the resultant coating film to ozone; and a heating step of heating the coating film.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
20170294541 · 2017-10-12 ·

A highly reliable semiconductor device includes a first insulator, a second insulator, a first conductor, a third insulator, an oxide semiconductor, second and third conductors, a fourth insulator, a fourth conductor overlapping with a region between the second and third conductors, a fifth insulator, and a sixth insulator in this order. The fourth insulator is in contact with top and side surfaces of the oxide semiconductor, and a top surface of the third insulator. The fifth insulator is in contact with the side surface of the oxide semiconductor and the top surface of the third insulator so as to cover the oxide semiconductor, the second to fourth conductors, and the fourth insulator. The first, second, fifth, and sixth insulators have low permeability for hydrogen, water, and oxygen. The first and sixth insulators have a thinner thickness than the second and sixth insulators, respectively.

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
20170294541 · 2017-10-12 ·

A highly reliable semiconductor device includes a first insulator, a second insulator, a first conductor, a third insulator, an oxide semiconductor, second and third conductors, a fourth insulator, a fourth conductor overlapping with a region between the second and third conductors, a fifth insulator, and a sixth insulator in this order. The fourth insulator is in contact with top and side surfaces of the oxide semiconductor, and a top surface of the third insulator. The fifth insulator is in contact with the side surface of the oxide semiconductor and the top surface of the third insulator so as to cover the oxide semiconductor, the second to fourth conductors, and the fourth insulator. The first, second, fifth, and sixth insulators have low permeability for hydrogen, water, and oxygen. The first and sixth insulators have a thinner thickness than the second and sixth insulators, respectively.

OXYGEN-ENABLED COMPOSITION

A composition of chlorine-free poly-oxygenated aluminum hydroxide that comprises a clathrate containing oxygen gas molecules, In one embodiment, the poly-oxygenated aluminum hydroxide has particles having a diameter of 212 microns or less. The composition may be homogeneous.

METHOD FOR PHOSGENATING COMPOUNDS CONTAINING HYDROXYL, THIOL, AMINO AND/OR FORMAMIDE GROUPS

The invention relates to a method particularly for reacting phosgene with compounds that contain hydroxyl, thiol, amino and/or formamide groups, comprising the steps of: (I) providing a reactor which has a first reaction chamber (300, 310, 320, 330, 340, 350) and a second reaction chamber (200, 210, 220, 230, 240, 250, 260), the first and the second reaction chambers being separated from one another by means of a porous carbon membrane (100, 110, 120, 130, 140, 150); (II) providing carbon monoxide and chlorine in the first reaction chamber; and simultaneously (III) providing a compound containing hydroxyl, thiol, amino and/or formamide groups in the second reaction chamber. The porous carbon membrane is configured to catalyse the reaction of carbon monoxide and chlorine to obtain phosgene, and to allow this formed phosgene to pass into the second reaction chamber. The invention also relates to a reactor that is suitable for carrying out the claimed method.

PRIMER WASHCOATS FOR METAL SUBSTRATES

Metal substrates suitable for use as catalyst supports for catalytic converters are disclosed, as well as methods of making such substrates. A coating of boehmite particles in aqueous suspension is applied to the metal substrate and calcined. Any further desired washcoats can then be applied to the resulting calcined boehmite-coated metal substrate. One exemplary metal for use as a substrate is stainless steel.

PRIMER WASHCOATS FOR METAL SUBSTRATES

Metal substrates suitable for use as catalyst supports for catalytic converters are disclosed, as well as methods of making such substrates. A coating of boehmite particles in aqueous suspension is applied to the metal substrate and calcined. Any further desired washcoats can then be applied to the resulting calcined boehmite-coated metal substrate. One exemplary metal for use as a substrate is stainless steel.

CLOUD-EDGE COLLABORATION FORECASTING SYSTEM AND METHOD FOR ALUMINUM OXIDE PRODUCTION INDEXES
20220309393 · 2022-09-29 ·

Provided is a cloud-edge collaboration forecasting system and method for aluminum oxide production indexes. The forecasting system performs forecasting algorithm selection, parameter configuration and model training on indexes and variables of the aluminum oxide production process at a cloud model training server, performs evaluation and parameter correction on the trained model to obtain an optimal training model, and pre-processes the data in the aluminum oxide production process at an aluminum oxide production index forecasting computer at an edge end. The trained model parameters are imported from the cloud, and further the trained forecasting model is used for forecasting aluminum oxide production indexes for different production processes. The forecasting system and method can provide powerful calculating resources by training an aluminum oxide production index forecasting model through the cloud model training server, and real-time convenient aluminum oxide production index forecasting through the computer at the edge end.

POLISHING SOLUTIONS AND METHODS OF USING SAME
20170226380 · 2017-08-10 ·

A polishing solution includes a fluid component and a plurality of conditioning particles. The fluid component includes water, a basic pH adjusting agent, and a polymeric thickening agent. The polymeric thickening agent is present in the fluid component at greater than 0.01 weight percent based on the total weight of the polishing solution.