This invention relates to a method for exfoliating inorganic layered compounds to form two-dimensional (2D) inorganic compounds. The exfoliation is carried out in aqueous media in the present of polycyclic aromatic compounds. The invention also relates to aqueous suspensions of two-dimensional compounds which arise from the exfoliation method. The invention further relates to methods of forming thin films of two-dimensional compounds from suspensions and to devices comprising thin films of two-dimensional (2D) inorganic compounds.

This invention relates to a method for exfoliating inorganic layered compounds to form two-dimensional (2D) inorganic compounds. The exfoliation is carried out in aqueous media in the present of polycyclic aromatic compounds. The invention also relates to aqueous suspensions of two-dimensional compounds which arise from the exfoliation method. The invention further relates to methods of forming thin films of two-dimensional compounds from suspensions and to devices comprising thin films of two-dimensional (2D) inorganic compounds.

A technique for exfoliating a transition metal dichalcogenide material to produce separated nano-scale platelets includes combining the transition metal dichalcogenide material with a liquid to form a slurry, wherein the transition metal dichalcogenide material includes layers of nano-scale platelets and has a general chemical formula MX.sub.2, and wherein M is a transition metal and X is sulfur, selenium, or tellurium. The slurry of the transition metal dichalcogenide material is treated with an oxidant to form peroxo-metalate intermediates on an edge region of the layers of nano-scale platelets of the transition metal dichalcogenide material. The peroxo-metalate intermediates is treated with a reducing agent to form negatively charged poly-oxo-metalates to induce separation of the transition metal dichalcogenide material into the separated nano-scale platelets of the transition metal dichalcogenide material.

A method of improving leach kinetics and recovery during atmospheric or above-atmospheric leaching of a metal sulfide is disclosed. A system for practicing the aforementioned method is also disclosed. Apparatus for practicing the aforementioned method is also disclosed. A new composition of matter which is formed by the aforementioned method, and which may be utilized in the system and apparatus is further disclosed. The new composition of matter may exhibit improved leach kinetics, and may have some utility in the semi-conductor arts, including uses within photovoltaic materials.

A method of improving leach kinetics and recovery during atmospheric or above-atmospheric leaching of a metal sulfide is disclosed. A system for practicing the aforementioned method is also disclosed. Apparatus for practicing the aforementioned method is also disclosed. A new composition of matter which is formed by the aforementioned method, and which may be utilized in the system and apparatus is further disclosed. The new composition of matter may exhibit improved leach kinetics, and may have some utility in the semi-conductor arts, including uses within photovoltaic materials.

A method for manufacturing bacterially induced crystal particle includes culturing bacteria in a culture medium including a carbon source and a raw metal material including a transition metal, so that the bacteria induce a raw metal material to undergo a reduction-oxidation reaction; isolating a wet powder material from the culture medium; and drying the wet powder material to obtain a powder material. The powder material includes at least one bacterially induced crystal particle.

A method for manufacturing bacterially induced crystal particle includes culturing bacteria in a culture medium including a carbon source and a raw metal material including a transition metal, so that the bacteria induce a raw metal material to undergo a reduction-oxidation reaction; isolating a wet powder material from the culture medium; and drying the wet powder material to obtain a powder material. The powder material includes at least one bacterially induced crystal particle.

Methods of sulfurizing metal containing particles in the absence of hydrogen are described. One method includes contacting a bed of metal containing particles with a gaseous stream comprising hydrogen sulfide and inert gas under reaction conditions sufficient to produce sulfided metal containing particles. The gaseous stream is introduced into a vertical reactor at an inlet positioned at the bottom portion of the reactor and any unreacted hydrogen sulfide and inert gas is removed at an outlet positioned above the inlet. The sulfided metal containing particles can be removed from the reactor and stored.

Methods of sulfurizing metal containing particles in the absence of hydrogen are described. One method includes contacting a bed of metal containing particles with a gaseous stream comprising hydrogen sulfide and inert gas under reaction conditions sufficient to produce sulfided metal containing particles. The gaseous stream is introduced into a vertical reactor at an inlet positioned at the bottom portion of the reactor and any unreacted hydrogen sulfide and inert gas is removed at an outlet positioned above the inlet. The sulfided metal containing particles can be removed from the reactor and stored.

The disclosure provides relates to compositions and methods for water treatment. It also addresses a method for synthesizing TiO.sub.2 (and other metal oxides) with or without dopants. This method enables control over size, phase, morphology and porosity and specific surface area of these materials. The disclosure also provides metal oxide composites that can be used in photocatalysts, photovoltaics, and solar hydrogen applications.