A quantum dot including a nanoparticle template including a first semiconductor nanocrystal including a Group II-VI compound, a quantum well including a second semiconductor nanocrystal disposed on the nanoparticle template, the second semiconductor nanocrystal including a Group IIIA metal excluding aluminum and a Group V element; and a shell comprising a third semiconductor nanocrystal disposed on the quantum well, the third semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dot does not include cadmium, a band gap energy of the second semiconductor nanocrystal is less than a band gap energy of the first semiconductor nanocrystal, the band gap energy of the second semiconductor nanocrystal is less than a band gap energy of the third semiconductor nanocrystal, and the quantum dot includes an additional metal including an alkali metal, an alkaline earth metal, aluminum, iron, cobalt, nickel, copper, zinc, or a combination thereof.

A quantum dot including a nanoparticle template including a first semiconductor nanocrystal including a Group II-VI compound, a quantum well including a second semiconductor nanocrystal disposed on the nanoparticle template, the second semiconductor nanocrystal including a Group IIIA metal excluding aluminum and a Group V element; and a shell comprising a third semiconductor nanocrystal disposed on the quantum well, the third semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dot does not include cadmium, a band gap energy of the second semiconductor nanocrystal is less than a band gap energy of the first semiconductor nanocrystal, the band gap energy of the second semiconductor nanocrystal is less than a band gap energy of the third semiconductor nanocrystal, and the quantum dot includes an additional metal including an alkali metal, an alkaline earth metal, aluminum, iron, cobalt, nickel, copper, zinc, or a combination thereof.

Provided is a nanoparticle for photochromic materials that enables the production of photochromic materials in which the reaction time of a photochromic reaction is short.

The nanoparticle for photochromic materials is represented by the following formula (1):

ZnX   (1), wherein X represents a Group 16 element, the nanoparticle being doped with and/or having, adsorbed thereto, a transition metal, the nanoparticle having organic ligands containing elemental sulfur on the surface thereof.

Provided is a nanoparticle for photochromic materials that enables the production of photochromic materials in which the reaction time of a photochromic reaction is short.

The nanoparticle for photochromic materials is represented by the following formula (1):

ZnX   (1), wherein X represents a Group 16 element, the nanoparticle being doped with and/or having, adsorbed thereto, a transition metal, the nanoparticle having organic ligands containing elemental sulfur on the surface thereof.

A quantum dot according to an embodiment includes a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium and a semiconductor nanocrystal shell on the core, the semiconductor nanocrystal shell including a zinc chalcogenide, wherein the quantum dot does not include cadmium, the zinc chalcogenide includes zinc and selenium, the quantum dot further includes gallium and a primary amine having 5 or more carbon atoms, and the quantum dot is configured to emit light having a maximum emission peak in a range of greater than about 450 nanometers (nm) and less than or equal to about 480 nm by excitation light. A method of producing the quantum dot and an electronic device including the same are also disclosed.

A quantum dot according to an embodiment includes a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium and a semiconductor nanocrystal shell on the core, the semiconductor nanocrystal shell including a zinc chalcogenide, wherein the quantum dot does not include cadmium, the zinc chalcogenide includes zinc and selenium, the quantum dot further includes gallium and a primary amine having 5 or more carbon atoms, and the quantum dot is configured to emit light having a maximum emission peak in a range of greater than about 450 nanometers (nm) and less than or equal to about 480 nm by excitation light. A method of producing the quantum dot and an electronic device including the same are also disclosed.

The present disclosure provides a method for manufacturing a quantum dot film, comprising: providing a substrate plate; sequentially forming a plurality of quantum dot material layers capable of emitting light having different colors on the substrate plate, wherein at least one of the quantum dot material layers comprises a plurality of quantum dots; performing a local crosslinking process on at least one of the quantum dot material layers, so as to crosslink the crosslinkable ligands in a region emitting light having a corresponding color in the quantum dot material layer, and performing a fluorescence quenching process on the quantum dot material layer subjected to the local crosslinking process, so as to quench the fluorescence of quantum dots outside the region emitting light having the corresponding color in the quantum dot material layer. The present disclosure further provides a display panel and a method for manufacturing the same.

The present disclosure provides a method for manufacturing a quantum dot film, comprising: providing a substrate plate; sequentially forming a plurality of quantum dot material layers capable of emitting light having different colors on the substrate plate, wherein at least one of the quantum dot material layers comprises a plurality of quantum dots; performing a local crosslinking process on at least one of the quantum dot material layers, so as to crosslink the crosslinkable ligands in a region emitting light having a corresponding color in the quantum dot material layer, and performing a fluorescence quenching process on the quantum dot material layer subjected to the local crosslinking process, so as to quench the fluorescence of quantum dots outside the region emitting light having the corresponding color in the quantum dot material layer. The present disclosure further provides a display panel and a method for manufacturing the same.

Provided is a method for recovering a valuable metal sulfide, the method including: (a) adding limestone to a residual solution including a valuable metal to remove iron and aluminum; (b) adding sulfuric acid and a sulfide to the solution from which the iron and aluminum are removed to recover the valuable metal sulfide; and (c) adding air or sulfuric acid to the solution from which the valuable metal sulfide is recovered to remove sulfur.

Provided is a method for recovering a valuable metal sulfide, the method including: (a) adding limestone to a residual solution including a valuable metal to remove iron and aluminum; (b) adding sulfuric acid and a sulfide to the solution from which the iron and aluminum are removed to recover the valuable metal sulfide; and (c) adding air or sulfuric acid to the solution from which the valuable metal sulfide is recovered to remove sulfur.