A novel material and a transistor including the novel material are provided. One embodiment of the present invention is a composite oxide including at least two regions. One of the regions includes In, Zn and an element M1 (the element M1 is one or more of Al, Ga, Si, B, Y, Ti, Fe, Ni, Ge, Zr, Mo, La, Ce, Nd, Hf, Ta, W, Mg, V, Be, and Cu) and the other of the regions includes In, Zn, and an element M2 (the element M2 is one or more of Al, Ga, Si, B, Y, Ti, Fe, Ni, Ge, Zr, Mo, La, Ce, Nd, Hf, Ta, W, Mg, V, Be, and Cu). In an analysis of the composite oxide by energy dispersive X-ray spectroscopy, the detected concentration of the element M1 in a first region is less than the detected concentration of the element M2 in a second region, and a surrounding portion of the first region is unclear in an observed mapping image of the energy dispersive X-ray spectroscopy.

A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

A luminophore may have the general formula A.sub.xM.sub.yX.sub.z:RE. A may be selected from the group of the trivalent cations. M may be selected from the group of the trivalent cations and includes at least two elements from the following group: Ga, Sc, Al, In, Sb, Bi, As, and Lu. X may be selected from the group of the divalent anions. RE may be a dopant and may be selected from the group formed by the following elements and the combinations of the following elements: Ni, Mn, Cr, Co, Fe, and Sn, where

0.8≤x≤1.2,

0.8≤y≤1.2 and

2.7≤z≤3.3.

A process is also disclosed for producing a luminophore, an optoelectronic component, and an NIR spectrometer.

Provided are a device and a method for synthesis of a gallium-containing garnet-structured scintillator polycrystalline material. The synthesis device includes a polycrystalline material synthesis chamber (7) made of a thermal insulation material (1); a crucible (3) arranged at the center of the bottom of the polycrystalline material synthesis chamber; an induction coil (2) annularly arranged outside the polycrystalline material synthesis chamber at a position with a height corresponding to that of the crucible; an arc heating device (4) arranged on a central axis of the induction coil in the polycrystalline material synthesis chamber, so as to heat and melt raw materials at the center of the crucible by means of the high temperature generated by arc discharge; the induction coil is connected to a RF induction power supply.

This invention relates to antimicrobial gallium compounds, and to monomers containing gallium complex moieties that can be used in oral care products and dental materials, and which can reduce or eliminate dental caries and bacterial or fungal infections associated with medical and dental devices.

A ceramic sputtering target, wherein when a cross-sectional structure of a sputtering surface is observed with an electron microscope, an amount of microcracks defined below is 50 μm/mm or less, and after performing a peel test on the sputtering surface, an area ratio of peeled particles confirmed by observing the cross-sectional structure with an electron microscope is 1.0% or less.

Amount of microcracks=frequency of microcracks×average depth of microcracks

Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diameter of 10 nm or less.

Described are lithium transition metal halides which have ionic conductivity for lithium ions, a process for preparing them, their use as a solid electrolyte for an electrochemical cell, and electrochemical cells comprising lithium transition metal halides.

Embodiments of a population of buffered barrier layer coated nanostructures and a method of making the nanostructures are described. Each of the buffered barrier layer coated nanostructures includes a nanostructure, an optically transparent buffer layer disposed on the nanostructure, and an optically transparent buffered barrier layer disposed on the buffer layer. The buffered barrier layer is configured to provide a spacing between adjacent nanostructures in the population of buffered barrier layer coated nanostructures to reduce aggregation of the adjacent nanostructures. The method for making the nanostructures includes forming a solution of reverse micro-micelles using surfactants, incorporating nanostructures into the reverse micro-micelles, and incorporating a buffer agent into the reverse micro-micelles. The method further includes individually coating the nanostructures with a buffered barrier layer and isolating the buffered barrier layer coated nanostructures with the surfactants of the reverse micro-micelles disposed on the barrier layer.

The present disclosure provides a method of preparing a chalcogen containing solution that is hydrazine free and hydrazinium free, wherein the method comprises: providing a predetermined amount of elemental chalcogen; providing a predetermined amount of elemental sulfur; providing an amine solvent; and combining the predetermined amount of elemental chalcogen and the predetermined amount of elemental sulfur in the amine solvent, thereby dissolving the elemental chalcogen and the elemental sulfur in the amine solvent. The chalcogen containing solution can advantageously be used as a precursor for the formation of a chalcogen containing layer on a substrate.