To provide an oxide semiconductor with a novel structure. Such an oxide semiconductor is composed of an aggregation of a plurality of InGaZnO.sub.4 crystals each of which is larger than or equal to 1 nm and smaller than or equal to 3 nm, and in the oxide semiconductor, the plurality of InGaZnO.sub.4 crystals have no orientation. Alternatively, such an oxide semiconductor is such that a diffraction pattern like a halo pattern is observed by electron diffraction measurement performed by using an electron beam with a probe diameter larger than or equal to 300 nm, and that a diffraction pattern having a plurality of spots arranged circularly is observed by electron diffraction measurement performed by using an electron beam with a probe diameter larger than or equal to 1 nm and smaller than or equal to 30 nm.

An object is to provide a semiconductor device including a semiconductor element which has favorable characteristics. A manufacturing method of the present invention includes the steps of: forming a first conductive layer which functions as a gate electrode over a substrate; forming a first insulating layer to cover the first conductive layer; forming a semiconductor layer over the first insulating layer so that part of the semiconductor layer overlaps with the first conductive layer; forming a second conductive layer to be electrically connected to the semiconductor layer; forming a second insulating layer to cover the semiconductor layer and the second conductive layer; forming a third conductive layer to be electrically connected to the second conductive layer; performing first heat treatment after forming the semiconductor layer and before forming the second insulating layer; and performing second heat treatment after forming the second insulating layer.

The invention is directed to a method for producing non-oxide semiconductor nanoparticles, the method comprising: (a) subjecting a combination of reaction components to conditions conducive to microbially-mediated formation of non-oxide semiconductor nanoparticles, wherein said combination of reaction components comprises i) anaerobic microbes, ii) a culture medium suitable for sustaining said anaerobic microbes, iii) a metal component comprising at least one type of metal ion, iv) a non-metal component comprising at least one non-metal selected from the group consisting of S, Se, Te, and As, and v) one or more electron donors that provide donatable electrons to said anaerobic microbes during consumption of the electron donor by said anaerobic microbes; and (b) isolating said non-oxide semiconductor nanoparticles, which contain at least one of said metal ions and at least one of said non-metals. The invention is also directed to non-oxide semiconductor nanoparticle compositions produced as above and having distinctive properties.

[Objective] To provide a ceramic emitter that exhibits high radiation intensity and excellent wavelength selectivity.

[Solution] A ceramic emitter includes a polycrystalline body that has a garnet structure represented by a compositional formula R.sub.3Al.sub.5O.sub.12 (R: rare-earth element) or R.sub.3Ga.sub.5O.sub.12 (R: rare-earth element) and has pores with a porosity of 20-40%. The pores have a portion where the pores are connected to one another but not linearly continuous, inside the polycrystalline body.

The present disclosure provides a solid electrolyte material having high lithium ion conductivity. The solid electrolyte material of the present disclosure includes Li, M1, M2 and X, and has a spinel structure. M1 is at least one element selected from the group consisting of Mg and Zn. M2 is at least one element selected from the group consisting of Al, Ga, Y, In and Bi. X is at least one element selected from the group consisting of F, Cl, Br and I.

The invention relates to scintillation inorganic oxide single crystals with garnet structure, which comprise cerium and are co-alloyed with titanium and Group 2 elements. The invention makes it possible to increase the scintillation output and to enhance the energy resolution of scintillation detectors during gamma-ray quantum registration. The technical result is achieved by a single crystal with a garnet structure being co-alloyed with cerium, titanium and Group 2 elements. This single crystal is produced by the Czochralski process.

Disclosed are a red light and near-infrared light-emitting material and a preparation method thereof, and a light-emitting device including the light-emitting material. The red light and near-infrared light-emitting material contains a compound represented by a molecular formula, aSc.sub.2O.sub.3.Ga.sub.2O.sub.3.bR.sub.2O.sub.3, wherein the element R includes one or two of Cr, Ni, Fe, Yb, Nd or Er; 0.001≤a≤0.6; and 0.001≤b≤0.1. The light-emitting material can be excited by a spectrum having a wide wavelength range (ultraviolet light or purple light or blue light) to emit light with a wide spectrum of 650 nm to 1700 nm or multiple spectra, thus having higher light-emitting intensity.

Disclosed is a process for coating onto a substrate, including preparing a precursor having a general formula Q.sub.m/nMO.sub.xF.sub.y by a reaction M(OH).sub.x+yHF+m/nQ(OH).sub.n.fwdarw.Q.sup.n+.sub.m/n(MO.sub.xF.sub.y).sup.m−, wherein Q is an onium ion, selected from quaternary alkyl ammonium, quaternary alkyl phosphonium and trialkylsulfonium; M is a metal capable of forming an oxofluorometallate, where M may further comprise one or more additional metal, metalloid, and one or more of phosphorus (P), sulfur (S) and selenium (Se), iodine (I), and arsenic (As) or a combination thereof, and x>0, y>0, m≥1, n≥1; combining the precursor with a lithium ion source and with the substrate, and mixing to form a coating composition comprising a lithium oxofluorometallate having a general formula Li.sub.mMO.sub.xF.sub.y on the substrate. Further disclosed is a core-shell electrode active material including a core capable of intercalating and deintercalating lithium coated with the lithium oxofluorometallate having the general formula Li.sub.mMO.sub.xF.sub.y.

A solid electrolyte including a compound represented by Formula 1 or 3, the compound having a glass transition temperature of −30° C. or less, and a glass or glass-ceramic structure,

AQX-Ga.sub.1-zM.sub.z1(F.sub.1-kCl.sub.k).sub.3-3zZ.sub.3z1  Formula 1

wherein, in Formula 1, Q is Li or a combination of Li and Na, K, or a combination thereof, M is a trivalent cation, or a combination thereof, X is a halogen other than F, pseudohalogen, OH, or a combination thereof, Z is a monovalent anion, or a combination thereof, 1<A<5, 0≤z≤1, 0≤z1≤1, and 0≤k<1,

AQX-aM.sub.z1Z.sub.3z1-bGa.sub.1-z(F.sub.1-kCl.sub.k).sub.3-3z  Formula 3 wherein, in Formula 3, Q is Li or a combination of Li and Na, K, or a combination thereof; M is a trivalent cation, or a combination thereof, X is a halogen other than F, pseudohalogen, OH, or a combination thereof, Z is a monovalent anion, or a combination thereof, 0<a≤1, 0<b≤1, 0<a+b, a+b=4−A, 1<A<5, 0≤z<1, 0≤z1≤1, and 0≤k<1.

A light emitting device includes a light source configured to emit a primary light, a first phosphor that absorbs the primary light and converts the primary light into a first wavelength-converted light having a wavelength longer than that of the primary light, and a second phosphor that absorbs the primary light and converts the primary light into a second wavelength-converted light having a wavelength longer than that of the primary light. The first wavelength-converted light is a fluorescence having a light component over an entire wavelength range of 700 nm or more to 800 nm or less. The second wavelength-converted light is a fluorescence having a peak where a fluorescence intensity shows a maximum value in a wavelength range of 380 nm or more to less than 700 nm. The first wavelength-converted light has a 1/10 afterglow time longer than that of the second wavelength-converted light.