These halogen-containing tin oxide particles have a BET specific surface area of 25-100 m.sup.2/g and a crystallite diameter of 8-30 nm. The particles optimally contain 0.01-0.75 mass % halogen. Fluoline is optimally contained as the halogen. Optimally, the particles additionally contain tantalum, niobium, phosphorus, antimony, tungsten, or molybdenum. The volume resistivity is optimally 0.1-1000 .Math.cm.

An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.

A perovskite-based photoelectric functional material having a general formula M.sub.zA.sub.yBX.sub.z+y+2. The matrix of the photoelectric functional material is a perovskite material ABX.sub.3, M is an organic amphipathic molecule used as a modification component of the matrix, 0<z?0.5, 0<y?1, and y+z?1.

Functionalized metal oxides nanoparticles comprising at least one alkali metal ion and nitrate ions are disclosed herein. In addition, methods for obtaining functionalized nanoparticles are disclosed. Likewise, uses of the disclosed nanoparticles in the obtaining of colloidal inks and optoelectronic films for electronic devices, for example solar cells, are disclosed. The nanoparticles taught herein are useful in the manufacture of; inter alia, electronic, optoelectronic and photovoltaic devices.

A main object of the present invention is to provide a sulfide solid electrolyte material having favorable ion conductivity and low reduction potential. The present invention solves the above-mentioned problem by providing a sulfide solid electrolyte material including an M.sub.1 element (such as a Li element), an M.sub.2 element (such as a Ge element, a Si element and a P element) and a S element, wherein the material has a peak at a position of 2=29.580.50 in X-ray diffraction measurement using a CuK line; and when a diffraction intensity at the peak of 2=29.580.50 is regarded as I.sub.A and a diffraction intensity at a peak of 2=27.330.50 is regarded as I.sub.B, a value of I.sub.B/I.sub.A is less than 0.50, and M.sub.2 contains at least P and Si.

Proposed are a semiconductor layer including Sn-based perovskite including a chloride-based compound and an iodine-based compound, a thin film transistor including the same, and a manufacturing method thereof. The semiconductor layer includes a perovskite complex, where the perovskite complex includes a Sn-based perovskite and an additive including at least one selected from the group consisting of a first additive and a second additive, the first additive includes at least one selected from the group consisting of a chloride-based compound and an acetate-based compound, and the second additive includes an iodide-based compound (iodide). Thus, a transistor, an environmentally friendly material free of Pb, having high charge mobility and being easily industrialized, can be provided.

Disclosed is a tin oxide containing antimony and at least one element A selected from the group consisting of tantalum, tungsten, niobium, and bismuth. The antimony and the at least one element A selected from the group consisting of tantalum, tungsten, niobium, and bismuth are preferably dissolved in a solid state in tin oxide. The ratio of the number of moles of the element A to the number of moles of antimony, i.e., [(the number of moles of the element A/the number of moles of antimony)], is preferably 0.1 to 10.

A luminescent substance particle includes BaSnO.sub.3:Zn having a perovskite-type structure, a content of Zn (zinc) being more than 0.0% by mass and less than 8.0% by mass. Alternatively, a luminescent substance particle includes BaSnO.sub.3:Mg having a perovskite-type structure, a content of Mg (magnesium) being more than 0.0% by mass and less than 0.1% by mass.

An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.

Disclosed is a thermoelectric material according to various SSnSe-based formulas, and the systems and methods of manufacturing the thermoelectric, high performance material by hot pressing materials according to various formulas in order to obtain a figure of merit (ZT) suitable for thermoelectric applications at high (above 600K) temperatures. A disclosed method comprises hot-pressing a powder that comprises Sn and Se in a predetermined direction to form a pressed component, wherein the pressed component comprises a ZT value of at least 0.8 above about 750 K.