C01G19/006

RED-EMITTING PHOSPHORS, PROCESSES AND DEVICES

A process for synthesizing a Mn.sup.4+ doped phosphor of formula I by electrolysis is presented. The process includes electrolyzing a reaction solution comprising a source of manganese, a source of M and a source of A. One aspect relates to a phosphor composition produced by the process. A lighting apparatus including the phosphor composition is also provided. A.sub.x[MF.sub.y]:Mn.sup.4+ (I) where, A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MF.sub.y] ion; and y is 5, 6 or 7.

MAGNETO-OPTICAL MATERIAL, METHOD FOR PRODUCING SAME AND MAGNETO-OPTICAL DEVICE

Provided, as a transparent magneto-optical material which does not absorb fiber laser light within a wavelength range of 0.9-1.1 m and is thus suitable for constituting a magneto-optical device such as an optical isolator wherein the formation of a thermal lens is suppressed, is a magneto-optical material which is composed of a transparent ceramic that contains a complex oxide represented by formula (1) as a main component, or which is composed of a single crystal of a complex oxide represented by formula (1).


Tb.sub.2xR.sub.2(2-x)O.sub.8-x(1)

(In the formula, 0.800<x<1.00, and R represents at least one element selected from the group consisting of silicon, germanium, titanium, tantalum tin, hafinum and zirconium (excluding the cases where R represents only silicon, germanium or tantalum).)

Doped tin oxide and method for selective metallization of insulating substrate
09869025 · 2018-01-16 · ·

Embodiments of the present disclosure are directed to a doped tin oxide. The doped tin oxide includes a tin oxide and at least one oxide of a doping element. The doping element includes at least one of vanadium and molybdenum. The doped tin oxide includes an amount of the tin oxide ranging from 90 mol % to 99 mol %, and an amount of the at least one oxide ranging from 1 mol % to 10 mol %.

Variable refractive index thin films

A method of forming a variable refractive index thin film includes forming a coating including a tin (II) halide precursor and a liquid solvent, where the composition and/or concentration of the liquid solvent may vary spatially over one or more lateral dimension(s) of the coating. Annealing at elevated temperature may induce densification of the coating and the formation of a thin film having a variable refractive index. Local variability in the refractive index may be correlated to the location oxidation state of tin within the thin film, which may be related to the conformation of the liquid solvent.

COMPOSITION, AND METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION LAYER

A composition according to the present disclosure includes a perovskite compound precursor, a first solvent, and a second solvent. The first solvent has a boiling point of 50 C. or more and a dipole moment of 3.0 D or less, and does not dissolve a perovskite compound formed from the perovskite compound precursor. The second solvent has a dipole moment of more than 3.0 D, and dissolves the perovskite compound.

THERMOELECTRIC MATERIALS, THERMOELECTRIC MODULE INCLUDING THERMOELECTRIC MATERIALS, AND THERMOELECTRIC APPARATUS INCLUDING THERMOELECTRIC MODULES
20170186931 · 2017-06-29 ·

A thermoelectric material containing a dichalcogenide compound represented by Formula 1 and having low thermoelectric conductivity and high Seebeck coefficient:


R.sub.aT.sub.bX.sub.2-nY.sub.n (1)

wherein R is a rare earth element, T includes at least one element selected from the group consisting of Group 1 elements, Group 2 elements, and a transition metal, X includes at least one element selected from the group consisting of S, Se, and Te, Y is different from X and includes at least one element selected from the group consisting of S, Se, Te, P, As, Sb, Bi, C, Si, Ge, Sn, B, Al, Ga and In, a is greater than 0 and less than or equal to 1, b is greater than or equal to 0 and less than 1, and n is greater than or equal to 0 and less than 2.

VARIABLE REFRACTIVE INDEX THIN FILMS
20250066631 · 2025-02-27 ·

A method of forming a variable refractive index thin film includes forming a coating including a tin (II) halide precursor and a liquid solvent, where the composition and/or concentration of the liquid solvent may vary spatially over one or more lateral dimension(s) of the coating. Annealing at elevated temperature may induce densification of the coating and the formation of a thin film having a variable refractive index. Local variability in the refractive index may be correlated to the location oxidation state of tin within the thin film, which may be related to the conformation of the liquid solvent.

Method of preparing light-emitting material, light-emitting material prepared by method, and light-emitting device including light-emitting material

A method of preparing a light-emitting material, the method including mixing a first precursor solution including a first precursor and a first solvent with a second precursor solution including a second precursor and a second solvent to form a precipitate, and separating the precipitate to obtain a light-emitting material, wherein a solubility of the first precursor in the first solvent may be greater than a solubility of the first precursor in the second solvent, and a solubility of the second precursor in the second solvent may be greater than a solubility of the second precursor in the first solvent. A light-emitting material prepared by the method, and a light-emitting device including the light-emitting material is also described.

Thermoelectric materials, thermoelectric module including thermoelectric materials, and thermoelectric apparatus including thermoelectric modules

A thermoelectric material containing a dichalcogenide compound represented by Formula 1 and having low thermoelectric conductivity and high Seebeck coefficient:
R.sub.aT.sub.bX.sub.2-nY.sub.n(1) wherein R is a rare earth element, T includes at least one element selected from the group consisting of Group 1 elements, Group 2 elements, and a transition metal, X includes at least one element selected from the group consisting of S, Se, and Te, Y is different from X and includes at least one element selected from the group consisting of S, Se, Te, P, As, Sb, Bi, C, Si, Ge, Sn, B, Al, Ga and In, a is greater than 0 and less than or equal to 1, b is greater than or equal to 0 and less than 1, and n is greater than or equal to 0 and less than 2.