An imaging element includes a photoelectric conversion section including a first electrode 21, a photoelectric conversion layer 23A including an organic material, and a second electrode 22 that are stacked; an inorganic oxide semiconductor material layer 23B is formed between the first electrode 21 and the photoelectric conversion layer 23A; and an inorganic oxide semiconductor material included in the inorganic oxide semiconductor material layer 23B contains aluminum (Al) atoms, tin (Sn) atoms, zinc (Zn) atoms, and oxygen (O) atoms.

Disclosed are a method of producing an electrochromic composition capable of diversifying colors, an electrochromic composition produced thereby, and an electrochromic device including the electrochromic composition. The electrochromic composition may be produced through a solution direct reaction using an electro-spray machine including two nozzles symmetrically inclined toward a central axis. The method may include preparing, respectively, a first coating composition comprising a first electrochromic compound and a second coating composition comprising a second electrochromic compound; loading, respectively, the first coating composition and the second composition into an electro-spray machine; spraying the first coating composition and the second coating composition under application of a voltage to the electro-spray device; and forming a electrochromic composition by reacting the first electrochromic compound with the second electrochromic compound during spraying.

Production method for metal oxide fine particles includes: a step of mixing a fatty acid represented by C.sub.nH.sub.2nO.sub.2 (n=5 to 14) and a metal source consisting of a metal, metal oxide, or metal hydroxide of at least two metal elements selected from the group consisting of Zn, In, Sn, and Sb to obtain a mixture; a step of heating the mixture at a temperature that is equal to or higher than a melting temperature of the fatty acid and lower than a decomposition temperature of the fatty acid to obtain a metal soap which is a precursor of metal oxide fine particles; and a step of heating the precursor at a temperature that is equal to or higher than a melting temperature of the precursor and lower than a decomposition temperature of the precursor to obtain metal oxide fine particles having an average particle diameter of 80 nm or less.

An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.

An inorganic sulfide solid electrolyte having high air stability, and a preparation method and use thereof In the invention, some or all of P elements in a sulfide electrolyte are replaced with Sb elements, thereby providing an electrolyte having high air stability and ion mobility and applicable to an all-solid lithium secondary battery. The resulting inorganic sulfide electrolyte comprises the following materials: Li.sub.10M(P.sub.1-aSb.sub.a).sub.2S.sub.12, Li.sub.6(P.sub.1-aSb.sub.a)S.sub.5X and Li.sub.3(P.sub.1-aSb.sub.a)S.sub.4, where M is one or more of Ge, Si or Sn, X is one or more of F, Cl, Br or I, and 0.01≤a≤1.

The present disclosure relates to a method that includes treating a liquid that includes a first precursor at a concentration C.sub.1, a second precursor at a concentration C.sub.2, a third precursor at a concentration C.sub.3, and an additive at a concentration C.sub.4, where the treating results in a perovskite, each of C.sub.1, C.sub.2, and C.sub.3 are between 0.001 M and 100 M, inclusively, and at least one of C.sub.4/C.sub.1 or C.sub.4/C.sub.2 equals a ratio greater than or equal to zero

An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.

An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.

The present invention is able to provide an LGPS-based solid electrolyte characterized by: satisfying a composition of Li.sub.uSn.sub.vP.sub.2S.sub.yX.sub.z (6≤u≤14, 0.8≤v≤2.1, 9≤y≤16, 0<z≤1.6; X represents Cl, Br, or I); and having, in X-ray diffraction (CuKα: λ=1.5405 Å), peaks at least at positions of 2θ=19.80°±0.50°, 20.10°±0.50°, 26.60°±0.50°, and 29.10°±0.50°.

A method of forming a variable refractive index thin film includes forming a coating including a tin (II) halide precursor and a liquid solvent, where the composition and/or concentration of the liquid solvent may vary spatially over one or more lateral dimension(s) of the coating. Annealing at elevated temperature may induce densification of the coating and the formation of a thin film having a variable refractive index. Local variability in the refractive index may be correlated to the location oxidation state of tin within the thin film, which may be related to the conformation of the liquid solvent.