The present invention relates to a crystallised solid, called IZM-5, comprising a chemical composition expressed on an anhydrous base, in terms of mole, and defined by the following general formula: Sn.sub.aZn.sub.bS.sub.8: cR, wherein R represents at least one nitrogenous organic species; S sulphur, “a” is the molar amount of tin, denoted Sn, between 0.1 and 5; “b” is the molar amount of zinc, denoted Zn, between 0.2 and 8; “c” is the molar amount of the nitrogenous organic species R between 0 and 4.

A light-emitting material including aminosiloxane and a light-emitting compound represented by Formula 1, a light-emitting device including the light-emitting material, a method of preparing the light-emitting material, and a method of preparing the light-emitting compound represented by Formula 1:

A.sup.1B.sup.1X.sup.1.sub.3,  Formula 1 wherein A.sup.1 may be an alkali metal, B.sup.1 may be Pb, Sn, or any combination thereof, and X.sup.1 may be a halogen.

The present invention provides a particularly advantageous form of alkaline earth metal hydroxystannate and alkaline earth metal stannate exhibiting a BET specific surface area of from 20 to 200 m2/g. A method of producing such particulate material and evidence of its benefits in use such as in at a reduction in a polymer sample at elevated temperature is also disclosed.

Provided is a sulfide solid electrolyte material which has a composition that does not contain Ge, while having a smaller Li content than conventional sulfide solid electrolyte materials, and which has both lithium ion conductivity and chemical stability at the same time. A sulfide solid electrolyte which has a crystal structure represented by composition formula (Li.sub.3.45+β−4αSn.sub.α)(Si.sub.0.36Sn.sub.0.09)(P.sub.0.55−βSi.sub.β)S.sub.4 (wherein α≤0.67, β≤0.33 and 0.43<α+β (provided that 0.23<α≤0.4 when β=0.2 and 0.13<α≤0.4 when β=0.3 may be excluded)), or a crystal structure represented by composition formula Li.sub.7+γSi.sub.γP.sub.1−γS.sub.6 (wherein 0.1≤γ<0.3).

The present invention is able to provide an LGPS-based solid electrolyte characterized by: satisfying a composition of Li.sub.uSn.sub.vP.sub.2S.sub.yX.sub.z (6≤u≤14, 0.8≤v≤2.1, 9≤y≤16, 0<z≤1.6; X represents Cl, Br, or I); and having, in X-ray diffraction (CuKα: λ=1.5405 Å), peaks at least at positions of 2θ=19.80°±0.50°, 20.10°±0.50°, 26.60°±0.50°, and 29.10°±0.50°.

Production method for metal oxide fine particles includes: a step of mixing a fatty acid represented by C.sub.nH.sub.2nO.sub.2 (n=5 to 14) and a metal source consisting of a metal, metal oxide, or metal hydroxide of at least two metal elements selected from the group consisting of Zn, In, Sn, and Sb to obtain a mixture; a step of heating the mixture at a temperature that is equal to or higher than a melting temperature of the fatty acid and lower than a decomposition temperature of the fatty acid to obtain a metal soap which is a precursor of metal oxide fine particles; and a step of heating the precursor at a temperature that is equal to or higher than a melting temperature of the precursor and lower than a decomposition temperature of the precursor to obtain metal oxide fine particles having an average particle diameter of 80 nm or less.

A method of producing a kesterite material of CZTS, CZTSe or CZTSSe type, including the steps of: a) preparing an acidic solution by dissolving copper and zinc salts in water in desired molar ratio, b) preparing a basic solution by dissolving an alkali metal stannate together with an alkali metal carbonate or an alkali metal hydrogen carbonate or an alkali metal hydroxide or a combination thereof, and optionally with an alkali metal selenate or an alkali metal selenite or a mixture thereof, c) carrying out a precipitation reaction by mixing the acidic and the basic solution, d) drying the precipitate thereby providing a precursor for the kesterite material, and e) sulfurizing the precursor of step d to provide the kesterite material. Also, a precursor for a kesterite material of CZTS, CZTSe or CZTSSe type.

An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.

The present invention relates to a method for preparing a BaSnO.sub.3 thin film, comprising the steps of: a) precipitating an amorphous precipitate by adding an alkaline aqueous solution to a mixture solution comprising a barium salt, a tin salt, hydrogen peroxide, and an organic acid; b) preparing a crystalline BaSnO.sub.3 precursor material by preheating the mixture solution containing the amorphous precipitate; c) preparing a dispersion solution by dispersing the crystalline BaSnO.sub.3 precursor material in a polar organic solvent; d) coating the dispersion solution on a substrate; and e) preparing a BaSnO.sub.3 thin film of a perovskite structure by heat treating the dispersion solution coated on the substrate.

Embodiments of a article including include a substrate and a patterned coating are provided. In one or more embodiments, when a strain is applied to the article, the article exhibits a failure strain of 0.5% or greater. Patterned coating may include a particulate coating or may include a discontinuous coating. The patterned coating of some embodiments may cover about 20% to about 75% of the surface area of the substrate. Methods for forming such articles are also provided.