The present invention relates to a solid electrolyte comprising a sulfide-based compound and an all-solid-state battery applied therewith and, more particularly, to a solid electrolyte comprising a sulfide-based compound that is free of phosphorus (P) element but exhibits high ionic conductivity, and an all-solid-state battery applied therewith. The sulfide-based solid electrolyte and the all-solid-state battery applied therewith according to the present invention exhibit improved reactivity to moisture to prevent the generation of toxic gas, resulting in an improvement in safety and stability and do not reduce in ion conductivity even after being left in air, and the solid electrolyte is easy to handle and store thanks to the improved shelf stability thereof.

A process for synthesizing a Mn.sup.4+ doped phosphor of formula I by electrolysis is presented. The process includes electrolyzing a reaction solution comprising a source of manganese, a source of M and a source of A. One aspect relates to a phosphor composition produced by the process. A lighting apparatus including the phosphor composition is also provided. A.sub.x[MF.sub.y]:Mn.sup.4+ (I) where, A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MF.sub.y] ion; and y is 5, 6 or 7.

The present invention relates to a method for preparing a BaSnO.sub.3 thin film, comprising the steps of: a) precipitating an amorphous precipitate by adding an alkaline aqueous solution to a mixture solution comprising a barium salt, a tin salt, hydrogen peroxide, and an organic acid; b) preparing a crystalline BaSnO.sub.3 precursor material by preheating the mixture solution containing the amorphous precipitate; c) preparing a dispersion solution by dispersing the crystalline BaSnO.sub.3 precursor material in a polar organic solvent; d) coating the dispersion solution on a substrate; and e) preparing a BaSnO.sub.3 thin film of a perovskite structure by heat treating the dispersion solution coated on the substrate.

A main object of the present disclosure is to provide a sulfide solid electrolyte with high ion conductivity. The present disclosure achieves the object by providing a sulfide solid electrolyte including a LGPS-type crystal phase containing a Li element, an M element, a P element, and a S element, wherein: the M element is at least one kind or more of an element selected from Sb, Si, Ge, Sn, B, Al, Ga, In, Ti, Zr, V, and Nb; and in a .sup.31P-NMR measurement, when y (ppm) designates a half value width of a peak having an apex at a position of 77 ppm1 ppm, and x (%) designates a rate of impurity phase measured, the sulfide solid electrolyte satisfies a below formula (1):

y0.0431x+4.28(1).

A LiSnOS compound, a manufacturing method therefor and use thereof as an electrolyte material of Li-ion batteries, and a LiSnOS hybrid electrolyte are provided. The LiSnOS compound of the present invention is laminated SnOS embedded with lithium ions. The LiSnOS compound is represented by the formula Li.sub.3x[Li.sub.xSn.sub.1x(O,S).sub.2], where x>0. The manufacturing method for a LiSnOS compound includes the following steps of: (S1000) providing a SnOS compound; (S2000) adding a lithium source into the SnOS compound to form a LiSnOS precursor; and (S3000) performing calcination on the LiSnOS precursor in a vulcanization condition.

An oxide-based semiconductor compound including metal cations and oxygen, wherein hydride ions H.sup. originally bonded with the metal cations have been replaced with fluorine ions F.sup. and at least one of the fluorine ions F.sup. is bonded with one to three of the metal cations.

Materials and methods for preparing Cu.sub.2XSnY.sub.4 nanoparticles, wherein X is Zn, Cd, Hg, Ni, Co, Mn or Fe and Y is S or Se, (CXTY) are disclosed herein. The nanoparticles can be used to make layers for use in thin film photovoltaic (PV) cells. The CXTY materials are prepared by a colloidal synthesis in the presence of labile organo-chalcogens. The organo-chalcogens serves as both a chalcogen source for the nanoparticles and as a capping ligand for the nanoparticles.

An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.

The present disclosure relates to a method that includes treating a liquid that includes a first precursor at a concentration C.sub.1, a second precursor at a concentration C.sub.2, a third precursor at a concentration C.sub.3, and an additive at a concentration C.sub.4, where the treating results in a perovskite, each of C.sub.1, C.sub.2, and C.sub.3 are between 0.001 M and 100 M, inclusively, and at least one of C.sub.4/C.sub.1 or C.sub.4/C.sub.2 equals a ratio greater than or equal to zero

The present disclosure relates to compositions comprising quaternary metal chalcogenide nanoparticles stabilized by an inorganic metal-chalcogenide stabilizing agent, wherein the nanoparticles are dispersible in a polar solvent. More particularly, the disclosure relates to compositions of CZTS nanoparticles. This disclosure provides processes for manufacturing these compositions. The disclosure also provides coated substrates, thin films and devices comprising the compositions, and processes for manufacturing the same.