A mesoporous metal oxide materials with a chiral organization; and a method for producing it, in the method a polymerizable metal oxide precursor is condensed inside the pores of chiral nematic mesoporous silica by the so-called “hard templating” method. As a specific example, mesoporous titanium dioxide is formed inside of a chiral nematic silica film templated by nanocrystalline cellulose (NCC). After removing the silica template such as by dissolving the silica in concentrated aqueous base, the resulting product is a mesoporous titania with a high surface area. These mesoporous metal oxide materials with high surface area and chiral nematic structures that lead to photonic properties may be useful for photonic applications as well as enantioselective catalysis, photocatalysis, photovoltaics, UV filters, batteries, and sensors.

A mesoporous metal oxide materials with a chiral organization; and a method for producing it, in the method a polymerizable metal oxide precursor is condensed inside the pores of chiral nematic mesoporous silica by the so-called “hard templating” method. As a specific example, mesoporous titanium dioxide is formed inside of a chiral nematic silica film templated by nanocrystalline cellulose (NCC). After removing the silica template such as by dissolving the silica in concentrated aqueous base, the resulting product is a mesoporous titania with a high surface area. These mesoporous metal oxide materials with high surface area and chiral nematic structures that lead to photonic properties may be useful for photonic applications as well as enantioselective catalysis, photocatalysis, photovoltaics, UV filters, batteries, and sensors.

Micron scale tin oxide-based semiconductor devices are provided. Reactive-ion etching is used to produce a micron-scale electronic device using semiconductor films with tin oxides, such as barium stannate (BaSnO3). The electronic devices produced with this approach have high mobility, drain current, and on-off ratio without adversely affecting qualities of the tin oxide semiconductor, such as resistivity, electron or hole mobility, and surface roughness. In this manner, electronic devices, such as field-effect transistors (e.g., thin-film transistors (TFTs)), are produced having micron scale channel lengths and exhibiting complete depletion at room temperature.

Micron scale tin oxide-based semiconductor devices are provided. Reactive-ion etching is used to produce a micron-scale electronic device using semiconductor films with tin oxides, such as barium stannate (BaSnO3). The electronic devices produced with this approach have high mobility, drain current, and on-off ratio without adversely affecting qualities of the tin oxide semiconductor, such as resistivity, electron or hole mobility, and surface roughness. In this manner, electronic devices, such as field-effect transistors (e.g., thin-film transistors (TFTs)), are produced having micron scale channel lengths and exhibiting complete depletion at room temperature.

A physical and chemical method is provided for de-mixing (e.g. extracting, separating, purifying and/or enriching) the metal constituents of an alloy or mixed material into different droplet or solid particle products that are highly enriched in the respective phases of the metal. The method involves for instance but is not limited to, shearing, separating and segregating metallic droplets and particles in a carrier fluid to form other droplets or particles that are each separately highly enriched in one of some, if not of all, of the constituent phases of the alloy or mixed material.

A physical and chemical method is provided for de-mixing (e.g. extracting, separating, purifying and/or enriching) the metal constituents of an alloy or mixed material into different droplet or solid particle products that are highly enriched in the respective phases of the metal. The method involves for instance but is not limited to, shearing, separating and segregating metallic droplets and particles in a carrier fluid to form other droplets or particles that are each separately highly enriched in one of some, if not of all, of the constituent phases of the alloy or mixed material.

The present disclosure relates to a strategy to synthesize antimony- and zinc-doped tin oxide particles with tunable band gap characteristics. The methods yield stable and monodispersed particles with great control on uniformity of shape and size. The methods produce undoped and antimony and zinc-doped tin oxide stand-alone and core-shell particles, both nanoparticles and microparticles, as well as antimony and zinc-doped tin oxide shells for coating particles, including plasmonic core particles.

The present disclosure relates to a strategy to synthesize antimony- and zinc-doped tin oxide particles with tunable band gap characteristics. The methods yield stable and monodispersed particles with great control on uniformity of shape and size. The methods produce undoped and antimony and zinc-doped tin oxide stand-alone and core-shell particles, both nanoparticles and microparticles, as well as antimony and zinc-doped tin oxide shells for coating particles, including plasmonic core particles.

There is provided a near-infrared absorbing fine particle dispersion liquid containing near-infrared absorbing fine particles, thereby as well as exhibiting near-infrared light absorption properties and suppressing a scorching sensation on the skin when used in structures such as window materials and the like, also enabling usage of communication devices, imaging devices, sensors and the like that employ near-infrared light through these structures, a near-infrared absorbing film or a near-infrared absorbing glass, a dispersion body or a laminated transparent substrate, the dispersion liquid containing at least composite tungsten oxide fine particles and antimony doped tin oxide fine particles and/or tin doped indium oxide fine particles as near-infrared absorbing fine particles, wherein in the composite tungsten oxide fine particles, an average value of a transmittance in a wavelength range of 800 to 900 nm is 30% or more and 60% or less, and an average value of a transmittance in a wavelength range of 1200 to 1500 nm is 20% or less, and a transmittance at a wavelength of 2100 nm is 22% or less, when a visible light transmittance is 85% at the time of calculating only light absorption by the composite tungsten oxide fine particles, and containing mixed particles of the composite tungsten oxide fine particles and antimony-doped tin oxide fine particles and/or tin-doped indium oxide fine particles dispersed in a liquid medium, wherein the liquid medium is selected from rater, an organic solvent, an oil and fat, a liquid resin, a liquid plasticizer for plastics, or a mixture thereof, wherein when a visible light transmittance is adjusted to 85% at the time of calculating only light absorption by the near-infrared absorbing fine particles in the dispersion liquid by diluting with the liquid medium, an average value of a transmittance in the wavelength range of 800 to 900 nm is 30% or more and 60% or less, an average value of a transmittance in the wavelength range of 1200 to 1500 nm is 20% or less, and a transmittance at the wavelength of 2100 nm is 11% or less.

There is provided a near-infrared absorbing fine particle dispersion liquid containing near-infrared absorbing fine particles, thereby as well as exhibiting near-infrared light absorption properties and suppressing a scorching sensation on the skin when used in structures such as window materials and the like, also enabling usage of communication devices, imaging devices, sensors and the like that employ near-infrared light through these structures, a near-infrared absorbing film or a near-infrared absorbing glass, a dispersion body or a laminated transparent substrate, the dispersion liquid containing at least composite tungsten oxide fine particles and antimony doped tin oxide fine particles and/or tin doped indium oxide fine particles as near-infrared absorbing fine particles, wherein in the composite tungsten oxide fine particles, an average value of a transmittance in a wavelength range of 800 to 900 nm is 30% or more and 60% or less, and an average value of a transmittance in a wavelength range of 1200 to 1500 nm is 20% or less, and a transmittance at a wavelength of 2100 nm is 22% or less, when a visible light transmittance is 85% at the time of calculating only light absorption by the composite tungsten oxide fine particles, and containing mixed particles of the composite tungsten oxide fine particles and antimony-doped tin oxide fine particles and/or tin-doped indium oxide fine particles dispersed in a liquid medium, wherein the liquid medium is selected from rater, an organic solvent, an oil and fat, a liquid resin, a liquid plasticizer for plastics, or a mixture thereof, wherein when a visible light transmittance is adjusted to 85% at the time of calculating only light absorption by the near-infrared absorbing fine particles in the dispersion liquid by diluting with the liquid medium, an average value of a transmittance in the wavelength range of 800 to 900 nm is 30% or more and 60% or less, an average value of a transmittance in the wavelength range of 1200 to 1500 nm is 20% or less, and a transmittance at the wavelength of 2100 nm is 11% or less.