The inventive concept relates to a complex for detecting gas responsive to gas to be tested. The complex for the detecting the gas contains a nanostructure made of an oxide semiconductor, and a Terbium (Tb) additive supported on the nanostructure.

A surface modified electrode, and methods for preparing the surface modified electrode for use in an electrochemical sensor for detection of an analyte is described. The surface modified electrode includes a copper oxide (CuO) co-doped tin dioxide (SnO.sub.2) nano-spikes disposed over a gold-plated chip. The surface modified electrode further includes a polymer matrix (nafion) configured to bind the gold-plated chip with the copper oxide (CuO) co-doped tin dioxide (SnO.sub.2) nano-spikes. The present disclosure also relates to a process of preparing the surface modified electrode. The surface modified electrode of the present disclosure can be used in electrochemical sensors for detection of analytes, like 4-nitrophenol (4-NP).

A surface modified electrode, and methods for preparing the surface modified electrode for use in an electrochemical sensor for detection of an analyte is described. The surface modified electrode includes a copper oxide (CuO) co-doped tin dioxide (SnO.sub.2) nano-spikes disposed over a gold-plated chip. The surface modified electrode further includes a polymer matrix (nafion) configured to bind the gold-plated chip with the copper oxide (CuO) co-doped tin dioxide (SnO.sub.2) nano-spikes. The present disclosure also relates to a process of preparing the surface modified electrode. The surface modified electrode of the present disclosure can be used in electrochemical sensors for detection of analytes, like 4-nitrophenol (4-NP).

A gas sensing device is manufactured with three dimensionally connected metal oxide foam structure of large surface area and elongated channel pores within the three-dimensional porous structure for gas sensing applications, thereby increasing the surface area of the sensing layer and expediting sensitivity and sensor response. A gas sensor device includes the fabricated metal-oxide-foam sensing material attached via silver paste to platinum electrodes and ruthenium heater that are printed on low temperature co-fired ceramic substrate. This device will provide improved gas sensing performance with improved sensitivity and response time. Gas sensors including the metal oxide foam sensing material exhibit higher sensitivity to toxic gases such as ethanol and carbon monoxide due to the large surface area achieved from the porous three-dimensional structure providing increased chemical reaction sites and the larger porous channels allowing gases to easily pass, shortening the gas diffusion reaction path.

A gas sensing device is manufactured with three dimensionally connected metal oxide foam structure of large surface area and elongated channel pores within the three-dimensional porous structure for gas sensing applications, thereby increasing the surface area of the sensing layer and expediting sensitivity and sensor response. A gas sensor device includes the fabricated metal-oxide-foam sensing material attached via silver paste to platinum electrodes and ruthenium heater that are printed on low temperature co-fired ceramic substrate. This device will provide improved gas sensing performance with improved sensitivity and response time. Gas sensors including the metal oxide foam sensing material exhibit higher sensitivity to toxic gases such as ethanol and carbon monoxide due to the large surface area achieved from the porous three-dimensional structure providing increased chemical reaction sites and the larger porous channels allowing gases to easily pass, shortening the gas diffusion reaction path.

Provided are an iodine-containing metal compound, a composition for depositing a metal-containing thin film including the same, and a method of manufacturing a metal-containing thin film using the same. Since the composition for depositing a thin film according to one embodiment is present in a liquid state at room temperature, it has excellent storage and handling properties, and since the composition has high reactivity, a metal thin film may be efficiently formed using the composition.

Provided are an iodine-containing metal compound, a composition for depositing a metal-containing thin film including the same, and a method of manufacturing a metal-containing thin film using the same. Since the composition for depositing a thin film according to one embodiment is present in a liquid state at room temperature, it has excellent storage and handling properties, and since the composition has high reactivity, a metal thin film may be efficiently formed using the composition.

Provided are an indium tin oxide particle which has absorption in the near infrared region at a wavelength of 1800 nm or less, has high dispersibility, and has good plasmon resonance absorption; an indium tin oxide particle dispersion; a curable composition; an optical member; a lens unit; a method for producing indium tin oxide particles; and a method for producing a curable composition. Provided are an indium tin oxide particle, in which, in an X-ray photoelectron spectroscopy spectrum, an oxygen amount O.sub.A attributed to a peak having a peak top at a position of 530.0±0.5 eV and an oxygen amount O.sub.B attributed to a peak having a peak top at a position of 531.5±0.5 eV satisfy the following expression 1; a curable composition; and applications thereof.

O.sub.A/O.sub.B>1.4:  Expression 1

Provided are an indium tin oxide particle which has absorption in the near infrared region at a wavelength of 1800 nm or less, has high dispersibility, and has good plasmon resonance absorption; an indium tin oxide particle dispersion; a curable composition; an optical member; a lens unit; a method for producing indium tin oxide particles; and a method for producing a curable composition. Provided are an indium tin oxide particle, in which, in an X-ray photoelectron spectroscopy spectrum, an oxygen amount O.sub.A attributed to a peak having a peak top at a position of 530.0±0.5 eV and an oxygen amount O.sub.B attributed to a peak having a peak top at a position of 531.5±0.5 eV satisfy the following expression 1; a curable composition; and applications thereof.

O.sub.A/O.sub.B>1.4:  Expression 1

A dielectric composition including a metal oxide particle including a diameter of 5 nanometers or less capped with an organic ligand at at least a 1:1 ratio. A method including synthesizing metal oxide particles including a diameter of 5 nanometers or less; and capping the metal oxide particles with an organic ligand at at least a 1:1 ratio. A method including forming an interconnect layer on a semiconductor substrate; forming a first hardmask material and a different second hardmask material on the interconnect layer, wherein at least one of the first hardmask material and the second hardmask material is formed over an area of interconnect layer target for a via landing and at least one of the first hardmask material and the second hardmask material include metal oxide nanoparticles; and forming an opening to the interconnect layer selectively through one of the first hardmask material and the second hardmask material.