The present invention relates to a method for preparing a nano-titanate, a nano-titanic acid and a nano-TiO.sub.2 containing doping E or embedding E nanoparticles, and the use thereof. By using an E-doped Ti-T intermetallic compound as a titanium source, and reacting it with alkaline solution at atmospheric pressure and near its boiling-point temperature, an E-doped titanate nanofilm is prepared with high efficiency and in a short time. Through acid treatment and (or) heat treatment, a titanate nanofilm containing embedding E nanoparticles, an E-doped titanic acid nanofilm, and a titanic acid nanofilm and a TiO.sub.2 flake powder containing embedding E nanoparticles can be further prepared. Through a subsequent reaction at high temperature and pressure, the preparation of an E-doped titanate nanotubes and titanic acid nanotubes, and titanic acid nanotubes and TiO.sub.2 nanotubes/nanorods containing embedding E nanoparticles can be achieved in high efficiency and low-cost.

According to one embodiment, an active material is provided. The active material includes a composite oxide including yttrium atoms in an orthorhombic crystal structure thereof. Also included in the orthorhombic crystal structure of the composite oxide is at least one selected from the group consisting of alkali metal atoms and alkaline earth metal atoms. Among crystal sites represented by Wyckoff notations in the orthorhombic crystal structure, an occupancy of crystal sites that can be occupied by the alkali metal atoms or by the alkaline earth metal atoms is less than 100%.

Various examples are provided for multiferroic thin films. In one example, a multiferroic thin film device includes a thin film of multiferroic material and an electrode disposed on a side of the thin film of multiferroic material. The multiferroic material can be (Fe.sub.x,Sr.sub.1-x)TiO.sub.3 In another example, a method for producing a multiferroic thin film includes forming a multiferroic precursor; disposing the multiferroic precursor on a substrate to form a multiferroic coating; pre-baking the multiferroic coating on the substrate to form a pre-baked multiferroic thin film; and annealing the pre-baked multiferroic thin film under an oxygen atmosphere to form a crystalized multiferroic thin film. One or more electrodes can be formed on the crystalized multiferroic thin film.

An electromechanical transducer includes an electromechanical transducer film of laminated layers including a perovskite-type complex oxide represented by a general formula of ABO.sub.3; and a pair of electrodes opposed to each other with the electromechanical transducer film interposed between the pair of electrodes. In the general formula of ABO.sub.3, A includes Pb and B includes Zr and Ti. A variable ratio ?Pb of Pb, determined by Pb(max)?Pb(min), is 6% or less and a variable ratio ?Zr of Zr, determined by Zr(max)?Zr(min), is 9% or less, where an atomic weight ratio of Pb in the electromechanical transducer film is denoted by Pb/B, an atomic weight ratio of Zr in the electromechanical transducer film is denoted by Zr/B, a maximum value and a minimum value of the atomic weight ratio of Pb in a film thickness direction of the electromechanical transducer film are denoted by Pb(max) and Pb(min), respectively, and a maximum value and a minimum value of the atomic weight ratio of Zr in the film thickness direction of the electromechanical transducer film are denoted by Zr(max) and Zr(min), respectively.

A high dielectric constant (k40), low leakage current (10.sup.6 A/cm.sup.2 at 0.6 nm or lower equivalent oxide thickness) non-crystalline metal oxide is described, including an oxide of two or more compatible metals selected from the group consisting of bismuth, tantalum, niobium, barium, strontium, calcium, magnesium, titanium, zirconium, hafnium, tin, and lanthanide series metals. Metal oxides of such type may be formed with relative proportions of constituent metals being varied along a thickness of such oxides, to enhance their stability. The metal oxide may be readily made by a disclosed atomic layer deposition process, to provide a metal oxide dielectric material that is usefully employed in DRAM and other microelectronic devices.

A toner for developing electrostatic images, including toner particles containing an external additive on surfaces of toner matrix particles. The external additive contains at least a lanthanum-containing titanate compound.

A non-aqueous composition for forming doped TiO.sub.2 nanoparticles, comprising: i. a polar solvent comprising an organic compound having one or more oxygen atoms in its chemical structure, ii. a titanium(IV) halide, and iii. a dopant precursor selected from transition metal halides and lanthanide halides.

A cathode active material for a lithium secondary battery includes a lithium-aluminum-titanium oxide formed on a surface of a lithium metal oxide particle having a specific formula. The cathode active material may have an improved structural stability even in a high temperature condition.

Provided is a method for preparing a grain boundary insulation-type dielectric. The method includes the steps of obtaining a titanic acid compound and a ferroelectric having a value less than a melting point of the titanic acid compound; obtaining a mixture by adding the ferroelectric material to the titanic acid compound; and sintering the mixture at a temperature equal to or more than a melting point of the ferroelectric material.

Provided is a lepidocrocite-type titanate capable of suppressing the interference with the curing of a thermosetting resin and a resin composition having excellent wear resistance. A lepidocrocite-type titanate has a layered structure formed by chains of TiO.sub.6 octahedra, wherein part of Ti sites is substituted with ions of two or more metals selected from the group consisting of Li, Mg, Zn, Ni, Cu, Fe, Al, Ga, and Mn and runs of at least one metal selected from alkali metals other than Li are contained between layers of the layered structure.