The present invention relates to a method for preparing nano ZrO.sub.2/HfO.sub.2 and metal nanoparticles. Firstly, an initial alloy mainly composed of Zr/Hf and Al/Zn is prepared using metal raw materials; Dissolve the initial alloy in a hot alkaline solution to obtain an intermediate solution; Then reduce the alkaline concentration or (and) temperature of the intermediate solution to allow the solid flocculent products containing Zr/Hf to precipitate from the intermediate solution after the concentration or (and) temperature is reduced, resulting in low crystalline nano ZrO.sub.2/HfO.sub.2; By further heat treatment, crystalline nano ZrO.sub.2/HfO.sub.2 was obtained. When precious metal elements are dissolved in the initial alloy, this method can also be used to prepare metal nanoparticle doped nano ZrO.sub.2/HfO.sub.2; After removing the nano ZrO.sub.2/HfO.sub.2 from the composite product, metal nanoparticles were further prepared.

The present invention relates to a film-forming material, a film-forming composition, a film-forming method using the film-forming material and the film-forming composition, and a semiconductor device fabricated using the method. According to the present invention, by reducing a growth rate, even when forming a thin film on a substrate having a complex structure, a conformal thin film may be provided. In addition, by reducing impurities in the thin film and greatly improving the density of the thin film, leakage current generated due to oxidation of a lower electrode in the conventional high-temperature process may be greatly reduced. Therefore, the present invention has an effect of providing a film-forming material, a film-forming composition, a film-forming method using the film-forming material and the film-forming composition, and a semiconductor device fabricated using the film-forming method.

The present invention relates to a film-forming material, a film-forming composition, a film-forming method using the film-forming material and the film-forming composition, and a semiconductor device fabricated using the method. According to the present invention, by reducing a growth rate, even when forming a thin film on a substrate having a complex structure, a conformal thin film may be provided. In addition, by reducing impurities in the thin film and greatly improving the density of the thin film, leakage current generated due to oxidation of a lower electrode in the conventional high-temperature process may be greatly reduced. Therefore, the present invention has an effect of providing a film-forming material, a film-forming composition, a film-forming method using the film-forming material and the film-forming composition, and a semiconductor device fabricated using the film-forming method.

A thin film structure including a dielectric material layer, a method of manufacturing the same, and an electronic device employing the same are disclosed. The disclosed thin film structure includes a first conductive layer; a first dielectric material layer on the first conductive layer, the first dielectric material layer having a crystal phase and including a metal oxide; an In.sub.xO.sub.y-based seed material layer formed on the first dielectric material layer and having a thickness less than a thickness of the first dielectric material layer; and a second conductive layer formed on the seed material layer.

A thin film structure including a dielectric material layer, a method of manufacturing the same, and an electronic device employing the same are disclosed. The disclosed thin film structure includes a first conductive layer; a first dielectric material layer on the first conductive layer, the first dielectric material layer having a crystal phase and including a metal oxide; an In.sub.xO.sub.y-based seed material layer formed on the first dielectric material layer and having a thickness less than a thickness of the first dielectric material layer; and a second conductive layer formed on the seed material layer.

The present disclosure provides a Group 4 metal element-containing novel alkoxy compound, a method of preparing the Group 4 metal element-containing alkoxy compound, a precursor composition including the Group 4 metal element-containing alkoxy compound for depositing a film, and a method of depositing a Group 4 metal element-containing film using the precursor composition.

The present disclosure provides a Group 4 metal element-containing novel alkoxy compound, a method of preparing the Group 4 metal element-containing alkoxy compound, a precursor composition including the Group 4 metal element-containing alkoxy compound for depositing a film, and a method of depositing a Group 4 metal element-containing film using the precursor composition.

A process for preparing a mesoporous material, e.g., transition metal oxide, sulfide, selenide or telluride, Lanthanide metal oxide, sulfide, selenide or telluride, a post-transition metal oxide, sulfide, selenide or telluride, and metalloid oxide, sulfide, selenide or telluride. The process comprises providing a micellar solution comprising a metal precursor, an interface modifier, a hydrotropic or lyotropic ion precursor, and a surfactant; and heating the micellar solution at a temperature and for a period of time sufficient to form the mesoporous material. A mesoporous material prepared by the above process. A method of controlling nano-sized wall crystallinity and mesoporosity in mesoporous materials. The method comprises providing a micellar solution comprising a metal precursor, an interface modifier, a hydrotropic or lyotropic ion precursor, and a surfactant; and heating the micellar solution at a temperature and for a period of time sufficient to control nano-sized wall crystallinity and mesoporosity in the mesoporous materials. Mesoporous materials and a method of tuning structural properties of mesoporous materials.

A process for preparing a mesoporous material, e.g., transition metal oxide, sulfide, selenide or telluride, Lanthanide metal oxide, sulfide, selenide or telluride, a post-transition metal oxide, sulfide, selenide or telluride, and metalloid oxide, sulfide, selenide or telluride. The process comprises providing a micellar solution comprising a metal precursor, an interface modifier, a hydrotropic or lyotropic ion precursor, and a surfactant; and heating the micellar solution at a temperature and for a period of time sufficient to form the mesoporous material. A mesoporous material prepared by the above process. A method of controlling nano-sized wall crystallinity and mesoporosity in mesoporous materials. The method comprises providing a micellar solution comprising a metal precursor, an interface modifier, a hydrotropic or lyotropic ion precursor, and a surfactant; and heating the micellar solution at a temperature and for a period of time sufficient to control nano-sized wall crystallinity and mesoporosity in the mesoporous materials. Mesoporous materials and a method of tuning structural properties of mesoporous materials.

The tris(trimethylsilyl)silanol (H-SST) ligand can be reacted with a Group 4 or 5 metal alkoxides in a solvent to form an SST-modified metal alkoxide precursor. Exemplary Group 4 precursors include [Ti(SST).sub.2(OR).sub.2] (OR=OPr.sup.i, OBu.sup.t, ONep); [Ti(SST).sub.3(OBu.sup.n)]; [Zr(SST).sub.2(OBu.sup.t).sub.2(py)]; [Zr(SST).sub.3(OR)] (OR=OBu.sup.t, ONep); [Hf(SST).sub.2(OBu.sup.t).sub.2]; and [Hf(SST).sub.2(ONep).sub.2(py).sub.n] (n=1, 2), where OPr.sup.i=OCH(CH.sub.3).sub.2, OBu.sup.t=OC(CH.sub.3).sub.3, OBu.sup.n=O(CH.sub.2).sub.3CH.sub.3, ONep=OCH.sub.2C(CH.sub.3).sub.3, and py=pyridine. Exemplary Group 5 precursors include [V(SST).sub.3(py).sub.2]; [Nb(SST).sub.3(OEt).sub.2]; [Nb(O)(SST).sub.3(py)]; 2[H][(Nb(-O).sub.2(SST)).sub.6(.sub.6-O)]; [Nb.sub.8O.sub.10(OEt).sub.18(SST).sub.2.Na.sub.2O]; [Ta(SST)(-OEt)(OEt).sub.3].sub.2; and [Ta(SST).sub.3(OEt).sub.2]; where OEt=OCH.sub.2CH.sub.3. When thermally processed, the precursors can form unusual core-shell nanoparticles. For example, HfO.sub.2/SiO.sub.2 core/shell nanoparticles have demonstrated resistance to damage in extreme irradiation and thermal environments.