A mixed conductor represented by Formula 1:

A.sub.xTi.sub.5yG.sub.zO.sub.12Formula 1 wherein, in Formula 1, A is a monovalent cation, G is at least one of a monovalent cation, a divalent cation, a trivalent cation, a tetravalent cation, a pentavalent cation, or a hexavalent cation, with the proviso that G is not Ti or Cr, wherein 0<x<2, 0.3<y<5, 0<z<5, and 0<3.

Solid-state lithium ion electrolytes of lithium potassium bismuth oxide based compounds are provided which contain an anionic framework capable of conducting lithium ions. Materials of specific formulae are provided and methods to alter the materials with inclusion of aliovalent ions shown. Lithium batteries containing the composite lithium ion electrolytes are provided. Electrodes containing the lithium borate based materials coated on the active material and batteries containing the electrodes are also provided.

Methods of synthesizing Bi.sub.2S.sub.3CdS particles in the form of spheres as well as properties of these Bi.sub.2S.sub.3CdS particles are described. Methods of photocatalytic degradation of organic pollutants employing these Bi.sub.2S.sub.3CdS particles and methods of preventing or reducing microbial growth on a surface by applying these Bi.sub.2S.sub.3CdS particles in the form of a solution or an antimicrobial product onto the surface are also specified.

A lead-based alloy containing alloying additions of bismuth, antimony, arsenic, and tin is used for the production of doped leady oxides, lead-acid battery active materials, lead-acid battery electrodes, and lead-acid batteries.

The invention relates to a material comprising at least one compound having formula Bi.sub.1-xM.sub.xAg.sub.1-y-M.sub.yOS.sub.1-zM.sub.z, the methods for producing said material and the use thereof as a semiconductor, such as for photovoltaic or photochemical use and, in particular, for supplying a photocurrent. The invention further relates to photovoltaic devices using said compounds.

The present invention relates to a bismuth-based solid solution ceramic material, as well as a process for preparing the ceramic material and uses thereof, particularly in an actuator component employed, for example, in a droplet deposition apparatus. In particular, the present invention relates to a ceramic material having a general chemical formula (I): (I): x(Bi.sub.0.5Na.sub.0.5)TiO.sub.3-y(Bi.sub.0.5K.sub.0.5)TiO.sub.3-z.sub.1SrHfO.sub.3-z.sub.2SrZrO.sub.3, wherein x+y+Z.sub.1+Z.sub.2=1; y, (z.sub.1+z.sub.2)0; x0. In embodiments, the present invention also relates to a ceramic material having a general chemical formula (II): x(Bi0.5Na0.5)TiO3-y(Bi0.5K0.5)TiO3-y(Bi0.5K0.5)TiO3-ZiSrHfO3-z2SrZrO3, wherein x+y +z-i+z2=1; x, y, fa+z2)0; as well as a ceramic material of general formula (III): y(Bi.sub.0.5K.sub.0.5)TiO.sub.3-z.sub.1SrHfO.sub.3-z.sub.2SrZrO.sub.3, wherein y+z.sub.1,+z.sub.2=1; y, (z.sub.1+z.sub.2)0.

In accordance with the purpose(s) of the present disclosure, as embodied and broadly described herein, the disclosure, in one aspect, relates to compound Bi-poor perovskite crystals, methods for making the same, and ionizing and other electromagnetic radiation detectors constructed using the Bi-poor perovskite crystals. The Bi-poor perovskite crystals can be synthesized using melt-based growth methods and solution-based growth methods and contain no toxic heavy metals such as lead, cadmium, thallium, or mercury. Devices fabricated from the crystals maintain acceptable levels of performance over time. In some aspects, post-growth annealing can be used to improve the properties, including, but not limited to, room temperature resistivity and response to radiation.

The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [B.sup.I]; (iii) one or more trications [B.sup.III]; and (iv) one or more halide anions [X]. The invention also relates to a process for producing a semiconductor device comprising said semiconducting material. Also described is a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [B.sup.I] selected from Cu.sup.+, Ag.sup.+ and Au.sup.+; (iii) one or more trications [B.sup.III]; and (iv) one or more halide anions [X].

A chalcogen-containing compound of the following Chemical Formula 1 which exhibits excellent phase stability at a temperature corresponding to the driving temperature of a thermoelectric element, and also exhibits an excellent thermoelectric performance index (ZT) through an increase in a power factor and a decrease in thermal conductivity, a method for preparing the same, and a thermoelectric element including the same:

V.sub.1-xM.sub.xSn.sub.4-yPb.sub.yBi.sub.2Se.sub.7-zTe.sub.z [Chemical Formula 1]

In the above Formula 1, V is a vacancy, M is an alkali metal, x is greater than 0 and less than 1, y is greater than 0 and less than 4, and z is greater than 0 and less than or equal to 1.

A thermoelectric material containing a dichalcogenide compound represented by Formula 1 and having low thermoelectric conductivity and high Seebeck coefficient:
R.sub.aT.sub.bX.sub.2-nY.sub.n(1)
wherein R is a rare earth element, T includes at least one element selected from the group consisting of Group 1 elements, Group 2 elements, and a transition metal, X includes at least one element selected from the group consisting of S, Se, and Te, Y is different from X and includes at least one element selected from the group consisting of S, Se, Te, P, As, Sb, Bi, C, Si, Ge, Sn, B, Al, Ga and In, a is greater than 0 and less than or equal to 1, b is greater than or equal to 0 and less than 1, and n is greater than or equal to 0 and less than 2.