Patent classifications
C01G31/02
Doped nanoparticles and methods of making and using same
Doped nanoparticles, methods of making such nanoparticles, and uses of such nanoparticles. The nanoparticles exhibit a metal-insulator phase transition at a temperature of −200° C. to 350° C. The nanoparticles have a broad range of sizes and various morphologies. The nanoparticles can be used in coatings and in device structures.
Doped nanoparticles and methods of making and using same
Doped nanoparticles, methods of making such nanoparticles, and uses of such nanoparticles. The nanoparticles exhibit a metal-insulator phase transition at a temperature of −200° C. to 350° C. The nanoparticles have a broad range of sizes and various morphologies. The nanoparticles can be used in coatings and in device structures.
POWDER MATERIAL FOR SINTERING AND SOLID LATENT HEAT STORAGE MEMBER INCLUDING THE SAME
[PROBLEM TO BE SOLVED] To provide a solid heat storage material that is made of a VO.sub.2-based inorganic material, is easy to sinter, has a high latent heat storage capacity, and can be suitably used as a phase change solid heat storage material, and a method of manufacturing the same.
[SOLUTION] A powder material for sintering of a first aspect of the present invention includes vanadium and oxygen and includes a vanadium oxide represented by the chemical formula VO.sub.2 and at least one other type of vanadium oxide, in which, when the molar ratio of V and O in all the powder is expressed as 1:(2+d), d is in the range of 0<d<0.5.
POWDER MATERIAL FOR SINTERING AND SOLID LATENT HEAT STORAGE MEMBER INCLUDING THE SAME
[PROBLEM TO BE SOLVED] To provide a solid heat storage material that is made of a VO.sub.2-based inorganic material, is easy to sinter, has a high latent heat storage capacity, and can be suitably used as a phase change solid heat storage material, and a method of manufacturing the same.
[SOLUTION] A powder material for sintering of a first aspect of the present invention includes vanadium and oxygen and includes a vanadium oxide represented by the chemical formula VO.sub.2 and at least one other type of vanadium oxide, in which, when the molar ratio of V and O in all the powder is expressed as 1:(2+d), d is in the range of 0<d<0.5.
VANADIUM OXIDE WITH A FORMULA OF VOx AS CHARGE BALANCING MATERIAL FOR ELECTROCHROMIC DEVICES
An electrochromic device includes a charge balancing thin film comprised of a new vanadium oxide with a formula of VO.sub.x, which provides a high charge density, low coloration efficiency, an electroactive voltage in close proximity to those of some electrochromic materials, and high chemical and electrochromic stability. Vanadium oxide can be without doping or doped with others. The VO.sub.x charge balancing thin film has a porous nanostructure and is amorphous or a combination of amorphous and polycrystalline, and can work with electrochromic conjugated polymer in the device in a minimally color changing mode. A method to design a material for a charge balancing thin film to pair with a working electrode and obtain a low device voltage in an electrochromic device is disclosed. Methods to prepare related charge balancing thin films are also disclosed.
VANADIUM OXIDE WITH A FORMULA OF VOx AS CHARGE BALANCING MATERIAL FOR ELECTROCHROMIC DEVICES
An electrochromic device includes a charge balancing thin film comprised of a new vanadium oxide with a formula of VO.sub.x, which provides a high charge density, low coloration efficiency, an electroactive voltage in close proximity to those of some electrochromic materials, and high chemical and electrochromic stability. Vanadium oxide can be without doping or doped with others. The VO.sub.x charge balancing thin film has a porous nanostructure and is amorphous or a combination of amorphous and polycrystalline, and can work with electrochromic conjugated polymer in the device in a minimally color changing mode. A method to design a material for a charge balancing thin film to pair with a working electrode and obtain a low device voltage in an electrochromic device is disclosed. Methods to prepare related charge balancing thin films are also disclosed.
One-dimensional nano-chain structure and preparing method thereof
The present disclosure relates to a one-dimensional nano-chain structure including a single crystal structure as a minimum repeat unit structure.
One-dimensional nano-chain structure and preparing method thereof
The present disclosure relates to a one-dimensional nano-chain structure including a single crystal structure as a minimum repeat unit structure.
METHOD FOR THE PRODUCTION OF A SINGLE-CRYSTAL FILM, IN PARTICULAR PIEZOELECTRIC
A method of manufacturing a monocrystalline layer comprises the following successive steps: providing a donor substrate comprising a piezoelectric material of composition ABO.sub.3, where A consists of at least one element from among Li, Na, K, H, Ca; and B consists of at least one element from among Nb, Ta, Sb, V; providing a receiver substrate, transferring a layer called the “seed layer” from the donor substrate on to the receiver substrate, such that the seed layer is at the bonding interface, followed by thinning of the donor substrate layer; and growing a monocrystalline layer of composition A′B′O.sub.3 on piezoelectric material ABO.sub.3 of the seed layer, where A′ consists of a least one of the following elements Li, Na, K, H; B′ consists of a least one of the following elements Nb, Ta, Sb, V; and A′ is different from A or B′ is different from B.
Nanowire catalysts and methods for their use and preparation
Nanowires useful as heterogeneous catalysts are provided. The nanowire catalysts are useful in a variety of catalytic reactions, for example, the oxidative coupling of methane to C2 hydrocarbons. Related methods for use and manufacture of the same are also disclosed.