Embodiments disclosed herein include potassium sodium niobate (KNN) films and methods of making such films. In an embodiment, a method of forming a potassium sodium niobate (KNN) film comprises preparing a solution comprising water, potassium hexaniobate salts, and sodium hexaniobate salts. In an embodiment, the solution is spin coated onto a substrate to form a film on at least a portion of a surface of the substrate. In an embodiment, the method may further comprise heat treating the film.

A device including an LED light source optically coupled to a phosphor selected from [Y,Gd,Tb,La,Sm,Pr,Lu].sub.3[Al,Ga].sub.5−aO.sub.12−3/2a:Ce.sup.3+ (wherein 0<a<0.5), beta-SiAlON:Eu.sup.2+, [Sr,Ca,Ba][Al,Ga,In].sub.2S.sub.4:Eu.sup.2+, alpha-SiAlON doped with Eu.sup.2+ and/or Ce.sup.3+, Ca.sub.1−h−rCe.sub.hEu.sub.rAl.sub.1−h[Mg,Zn].sub.hSiN.sub.3, (where 0<h<0.2, 0<r<0.2), Sr(LiAl.sub.3N.sub.4):Eu.sup.2+, [Ca,Sr]S:Eu.sup.2+ or Ce.sup.3+, [Ba,Sr,Ca].sub.bSi.sub.gN.sub.m:Eu.sup.2+ (wherein 2b+4g=3m), quantum dot materials, and combinations thereof; and a green-emitting U.sup.6+-doped phosphor having a composition selected from the group consisting of U.sup.6+-doped phosphate-vanadate phosphors, U.sup.6+-doped halide phosphors, U.sup.6+-doped oxyhalide phosphors, U.sup.6+-doped silicate-germanate phosphors, U.sup.6+-doped alkali earth oxide phosphors, and combinations thereof, is presented.

The present disclosure provides solid electrolyte materials having high lithium ion conductivity. A solid electrolyte material according to the present disclosure consists essentially of Li, M, O, and X. M is at least one element selected from the group consisting of Nb and Ta. X is at least one element selected from the group consisting of Cl, Br, and I.

A cathode configured to use oxygen as a cathode active material includes: a porous film including a metal oxide, where a porosity of the porous film is about 50 volume percent to about 95 volume percent, based on a total volume of the porous film, and an amount of an organic component in the porous film is 0 to about 2 weight percent, based on a total weight of the porous film.

Provided is a piezoelectric single crystal, a method of manufacturing the piezoelectric single crystal, and piezoelectric and dielectric application components using the piezoelectric single crystal. The piezoelectric single crystal shows that characteristics of the piezoelectric single crystal are maximized through the control of composition concerning ions located at [A] from a perovskite type crystal structure ([A][B]O.sub.3), the single crystal of uniform composition can be provided without a composition gradient even in case of complex, chemical composition thanks to a solid phase single crystal growth method, and in particular, the piezoelectric single crystal is provided in a form which causes large resistance to a mechanical impact, and facilitates mechanical processing, so the piezoelectric single crystal can usefully be applied to the piezoelectric application component and the dielectric application component, like ultrasonic transducers, piezoelectric actuators, piezoelectric sensor, dielectric capacitors, using the piezoelectric single crystal pertain.

According to one embodiment, a negative electrode is provided. The negative electrode includes a negative electrode active material-containing layer including a niobium titanium composite oxide and a sulfur-containing coating. Spectral data obtained by X-ray photoelectron spectroscopy on the surface of the negative electrode active material-containing layer includes a first peak with a peak top existing in the range of 208 eV to 210 eV and a second peak with a peak top existing in the range of 160 eV to 165 eV. The ratio (P2/P1) of the peak height P2 of the second peak to the peak height P1 of the first peak falls within the range of 0.05 to 2.

This liquid composition for forming a KNN film includes an organic metal compound including an organic potassium compound, an organic sodium compound, and an organic niobium compound, and a solvent. In this liquid composition for forming a KNN film, the organic potassium compound and the sodium compound are each metal salts of a carboxylic acid represented by General Formula C.sub.nH.sub.2n+1COOH (here, 4≤n≤8), the organic niobium compound is a niobium alkoxide or a metal salt of a carboxylic acid represented by General Formula C.sub.nH.sub.2n+1COOH (here, 4≤n≤8), and a main solvent is a carboxylic acid represented by General Formula C.sub.nH.sub.2n+1COOH (here, 4≤n≤8) and is included in an amount of 50% by mass to 90% by mass with respect to 100% by mass of the liquid composition for forming a KNN film.

A mixed conductor represented by Formula 1:
A.sub.4+xM.sub.5-yM′.sub.yO.sub.12-δ,  Formula 1
wherein, in Formula 1, A is a monovalent cation, M is at least one of a divalent cation, a trivalent cation, or a tetravalent cation, M′ is at least one of a monovalent cation, a divalent cation, a trivalent cation, a tetravalent cation, a pentavalent cation, or a hexavalent cation, M and M′ are different from each other, and 0.3≤x<3, 0.01<y<2, and 0≤δ≤1 are satisfied.

A solid electrolyte according to the present disclosure is represented by the following compositional formula (1).

Li.sub.7-x(La.sub.3-zY.sub.z)(Zr.sub.2-xM.sub.x)O.sub.12  (1)

In the formula (1), x and z satisfy 0.00<x<1.10, and 0.00<z≤0.15, and M is two or more types of elements selected from the group consisting of Nb, Ta, and Sb.

Provided is a dielectric composition which includes, as a main component, a complex oxide represented by a general formula A.sub.aB.sub.bC.sub.4O.sub.15+α and having a tungsten bronze structure, wherein “A” includes at least Ba, “B” includes at least Zr, “C” includes at least Nb, “a” is 3.05 or higher, and “b” is 1.01 or higher. In the dielectric composition, when the total number of atoms occupying M2 sites in the tungsten bronze structure is set to 1, the proportion of “B” is 0.250 or higher. In addition, in the dielectric composition, an X-ray diffraction peak of a (410) plane of the tungsten bronze structure is splitted into two, and an integrated intensity ratio of an integrated intensity of a high-angle side peak of the X-ray diffraction peak with respect to an integrated intensity of a low-angle side peak of the X-ray diffraction peak is 0.125 or higher.