A ceramic powder material containing a garnet-type compound containing Li, wherein the ceramic powder material has a pore volume of 0.4 mL/g or more and 1.0 mL/g or less.

A dielectric material, a device including the same, and a method of preparing the dielectric material are provided. The dielectric material may include a compound represented by the following Formula 1:

K.sub.1+xNaSr.sub.4-2xLa.sub.xNb.sub.10O.sub.30,  Formula 1

wherein, in Formula 1, 0<x<2.

Provided is a piezoelectric material filler including alkali niobate compound particles having a ratio (K/(Na+K)) of the number of moles of potassium to the total number of moles of sodium and potassium of 0.460 to 0.495 in terms of atoms and a ratio ((Li+Na+K)/Nb) of the total number of moles of alkali metal elements to the number of moles of niobium of 0.995 to 1.005 in terms of atoms. The present invention can provide a piezoelectric material filler having excellent piezoelectric properties, and a composite piezoelectric material including the piezoelectric material filler and a polymer matrix.

The present invention provides a PZN-based large-size ternary high-performance single crystal, a growing method and a molten salt furnace. The PZN-based large-size ternary high-performance single crystal is represented by formula (1-x-y)Pb(B′.sub.1/2B″.sub.1/2)O.sub.3-yPb(Zn.sub.1/3Nb.sub.2/3)O.sub.3-xPbTiO.sub.3, wherein B′ is Mg, Fe, Sc, Ni, In, Yb, Lu and/or Ho, B″ is Nb, Ta and/or W, 0.4<x<0.6, 0.1<y<0.4, 0.1<1-x-y<0.4. The present invention adjusts the convective change of the melt through the rotation of the top seed and the bottom crucible, overcoming the problems of serious crystal inclusions and poor crystal quality during the growth process, and can adapt the change of the crystal diameter to the thermal inertia of the heat preservation system, thus effectively reducing crystal inclusions and improving the yield of the crystal.

A solid electrolyte material of the present disclosure includes: Li; M; Al; O; and X, wherein the M is at least one selected from the group consisting of Ta and Nb, and the X is at least one selected from the group consisting of F, Cl, and Br.

A positive electrode material includes: a positive electrode active material; a coating layer covering at least part of the surface of the positive electrode active material; and a second solid electrolyte. The coating layer includes a first solid electrolyte. The first solid electrolyte includes Li, M1 and F. M1 is at least one selected from the group consisting of Ti, Al and Zr. The second solid electrolyte includes Li, M2, O and X. M2 is at least one selected from the group consisting of Ta and Nb. X is at least one selected from the group consisting of F, Cl, Br and I.

A process for synthesizing a material, includes: (a) providing a plurality of powders including at least one lithiated powder including lithium, at least one TM powder including, for more than 95.0% of its mass, a transition metal chosen from titanium; cobalt, manganese, nickel, niobium, tin, iron and mixtures thereof, and at least one chalcogen powder including, for more than 95.0% of its mass, a chalcogen element chosen from sulfur, selenium, tellurium and mixtures thereof, (b) preparing a particulate mixture by mixing all the powders of the plurality or by mixing one of the powders of the plurality with a milled material obtained by; milling a particulate assembly formed by mixing at least two of the other powders of the plurality, and (c) milling the particulate fixture to form the material.

Provided are a dielectric, a device including the same, and a method of preparing the dielectric. The dielectric material includes a NaNbO.sub.3 ternary material including a perovskite phase with a Sm element substituted into a Na site such that the NaNbO.sub.3 ternary material has a permittivity of 600 or more at 1 kHz, and a temperature coefficient of capacitance (TCC) of about -15% to about 15% in a range of about -55° C. to about +200° C.

A piezoelectric stack, including: a substrate; an electrode film; and a piezoelectric film comprising an alkali niobium oxide of a perovskite structure represented by a composition formula of (K.sub.1-xNa.sub.x)NbO.sub.3 (0<x<1), wherein an average light transmittance through the piezoelectric film in a wavelength region of visible light and near-infrared ray is 65% or more.

A piezoelectric body contains potassium, sodium, and niobium, and has a perovskite structure. A Raman shift of peaks assigned to A.sub.1g obtained by performing Raman spectroscopic analysis on a plurality of measurement regions is 400 cm.sup.−1 or more and 700 cm.sup.−1 or less. A difference between a maximum value and a minimum value of the Raman shift among the peaks in the plurality of measurement regions is 11.0 cm.sup.−1 or less.