A solid electrolyte includes an ion conductor represented by at least one of Formulae 1 to 3,

Li.sub.1+3xM1.sub.1-xO.sub.2   Formula 1

wherein, in Formula 1, M1 is a trivalent element, and 0<x<1,

L.sub.1-yM2O.sub.2-yX.sub.y   Formula 2

wherein, in Formula 2, M2 is a trivalent element, X is at least one of a halogen atom or a pseudohalogen, and 0<y<1,

Li.sub.1-z(a-3)M3.sub.1-zD.sub.zO.sub.2   Formula 3

wherein, in Formula 3, M3 is a trivalent element, D is at least one of a monovalent element to a hexavalent element, and 0<z<1.

A solid-state electrolyte includes a lithium salt, a lithium ion-conducting inorganic material, a polymer, and a coupling agent. The coupling agent bonds the lithium ion-conducting inorganic material to the polymer.

An electronic device comprises a first blocking electrode; a second blocking electrode; and a dielectric material disposed between the first electrode and the second electrode, the dielectric material comprising a compound of Formula 1
Li.sub.24-b*y-c*z-a*xM.sup.1.sub.yM.sup.2.sub.zM.sup.3.sub.xO.sub.12-δ  (1)
wherein M.sup.1 is a cationic element having an oxidation state of b, wherein b is +1, +2, +3, +4, +5, +6, or a combination thereof; M.sup.2 is a cationic element having an oxidation state of c, wherein c is +1, +2, +3, +4, +5, +6, or a combination thereof; M.sup.3 is a cationic element having an oxidation state of a, wherein a is +1, +3, +4, or a combination thereof; 0≤y≤3; 0≤z≤3; 0≤x≤5; and 0≤δ≤2. Methods for the manufacture of the electronic device are also disclosed.

A solid composition according to the present disclosure is a solid composition for use in forming a solid electrolyte having a crystal phase, containing: at normal temperature and normal pressure, an oxide having a crystal phase different from the crystal phase of the solid electrolyte; a lithium compound; and an oxo acid compound. The oxo acid compound may contain at least one of a nitrate ion and a sulfate ion as an oxo anion.

Provided are a dielectric including an oxide represented by Formula 1 below and having a cubic crystal structure, a capacitor including the dielectric, a semiconductor device including the dielectric, and a method of manufacturing the dielectric.

(Rb.sub.xA.sub.1-x)(B.sub.yTa.sub.1-y)O.sub.3-<Formula 1>

In Formula 1 above, A is K, Na, Li, Cs, or a combination thereof, B is Nb, V, or a combination thereof, and 0.1x0.2, 0y0.2, and 00.5 are satisfied.

According to one embodiment, there is provided an active material. The active material includes secondary particles. The secondary particles include first primary particles and second primary particles. The first primary particles include an orthorhombic Na-containing niobium-titanium composite oxide. The second primary particles include at least one selected from the group consisting of a carbon black, a graphite, a titanium nitride, a titanium carbide, a lithium titanate having a spinel structure, a titanium dioxide having an anatase structure, and a titanium dioxide having a rutile structure.

According to one embodiment, provided is a composite oxide containing lithium, niobium, and tantalum. A mass ratio of tantalum with respect to niobium is in a range of from 0.01% to 1.0%.

Solid-state lithium ion electrolytes of lithium potassium tantalate based compounds are provided which contain an anionic framework capable of conducting lithium ions. An activation energy of the lithium metal silicate composites is from 0.12 to 0.45 eV and conductivities are from 10.sup.3 to 40 mS/cm at 300K. Compounds of specific formulae are provided and methods to alter the materials with inclusion of aliovalent ions shown. Lithium batteries containing the composite lithium ion electrolytes are also provided. Electrodes containing the lithium potassium tantalate based materials and batteries with such electrodes are also provided.

A thin film structure including a dielectric material layer and an electronic device to which the thin film structure is applied are provided. The dielectric material layer includes a compound expressed by ABO.sub.3, wherein at least one of A and B in ABO.sub.3 is substituted and doped with another atom having a larger atom radius, and ABO.sub.3 becomes A.sub.1xA.sub.xB.sub.1yB.sub.yO.sub.3 (where x>=0, y>=0, at least one of x and y0, a dopant A has an atom radius greater than A and/or a dopant B has an atom radius greater than B) through substitution and doping. A dielectric material property of the dielectric material layer varies according to a type of a substituted and doped dopant and a substitution doping concentration.

A method for forming a crystalline material having an anisotropic, quasi-one-dimensional crystal structure is disclosed. In various embodiments, the method includes: mixing a plurality of precursor materials together to form a combined precursor material, the plurality of precursor materials including a transition-metal ion or a main group ion and at least one of an alkaline earth ion or an alkali metal ion; and reacting the combined precursor material to obtain the crystalline material, the crystalline material having a formula ABX3, wherein A is the at least one of the alkaline earth ion or the alkali metal ion and B is the transition-metal ion surrounded by six anions (X), and wherein the quasi-one-dimensional anisotropic crystal provides a birefringence of at least 0.03, defined as the absolute difference in the real part of the complex-refractive-index values along different crystal axes, in at least a portion of one or N both of the visible-wave spectrum or the infrared spectrum.