A near-infrared shielding material fine particle dispersion body, a near-infrared shielding body, and a near-infrared shielding laminated structure containing composite tungsten oxide that exhibits more excellent near-infrared shielding function than that of a conventional near-infrared shielding material fine particle dispersion body, near-infrared shielding body, and near-infrared shielding laminated structure, and a method for producing the same. Also, a near-infrared shielding material fine particle dispersion body in which near-infrared shielding material fine particles are dispersed in a solid medium. The near-infrared shielding material fine particles are composite tungsten oxide fine particles containing a hexagonal crystal structure, in which a lattice constant of the composite tungsten oxide fine particles is 7.3850 or more and 7.4186 or less on the a-axis, and 7.5600 or more and 7.6240 or less on the c-axis, and a particle size of the near-infrared shielding material fine particles is 100 nm or less.

A method embodiment involves preparing single metal or mixed transition metal chalcogenide using exfoliation of two or more different bulk transition metal dichalcogenides in a manner to form an intermediate hetero-layered transition metal chalcogenide structure, which can be treated to provide a single-phase transition metal chalcogenide.

The present invention concerns specific new compounds of formula Li.sub.(2x)Na.sub.(x)MO.sub.(2y/2)F.sub.(1+y) (where 0x0.2 and 0.6y0,8 and M is a transition metal), cathode material comprising the new compounds, batteries and lithium-cells comprising said new compound or cathode material, a process for the production of the new compound and their use.

There is provided an oxide semiconductor film composed of nanocrystalline oxide or amorphous oxide, wherein the oxide semiconductor film includes indium, tungsten and zinc, a content rate of tungsten to a total of indium, tungsten and zinc in the oxide semiconductor film is higher than 0.5 atomic % and equal to or lower than 5 atomic %, and an electric resistivity is equal to or higher than 10.sup.1 cm. There is also provided a semiconductor device including the oxide semiconductor film.

An anti-counterfeit ink composition, an anti-counterfeit ink, and an anti-counterfeit printed matter that transmits a visible light region, having absorption in an infrared region, and capable of judging authenticity of the printed matter, and there is provided an anti-counterfeit ink composition, an anti-counterfeit ink, an anti-counterfeit printed matter, and a method for producing the anti-counterfeit ink composition, wherein a value of an XRD peak top intensity ratio of the composite tungsten oxide ultrafine particles is 0.13 or more when a value of the XRD peak intensity is set to 1, with plane of a silicon powder standard sample (640c produced by NIST) as a reference.

There is provided a near-infrared shielding ultrafine particle dispersion body which has transparency in a visible light region, which has good near-infrared shielding properties, in which a blue haze phenomenon is suppressed, and which can be produced with high productivity, namely there is provided a near-infrared shielding ultrafine particle dispersion body in which ultrafine particles having near-infrared shielding properties are dispersed in a solid medium, wherein the ultrafine particles are composite tungsten oxide ultrafine particles, and a value of an XRD peak top intensity ratio of the composite tungsten oxide ultrafine particles is 0.13 or more when a value of the XRD peak intensity is set to 1, with plane (220) of a silicon powder standard sample (640c produced by NIST) as a reference.

A general-purpose composite tungsten oxide ultrafine particles capable of producing a dispersion liquid with high productivity while having properties such as good visible light transmittance and shielding light in a near-infrared region, and a composite tungsten oxide ultrafine particle dispersion liquid using the same, wherein a value of an XRD peak top intensity ratio of the composite tungsten oxide ultrafine particles is 0.13 or more when the XRD peak intensity is set to 1, with plane of a silicon powder standard sample (640 c produced by NIST) as a reference.

A proton conducting ceramic membrane comprising a conducting layer, wherein said conducting layer comprises a mixture of a rare-earth tungstate as herein defined and a mixed metal oxide as herein defined. The invention also relates to a reactor comprising said membrane and the use of said membrane in a dehydrogenation process.

The invention provides a method for preparation of rubidium cesium tungsten bronze particles and a composition of rubidium cesium tungsten bronze particles comprising an organic or inorganic base material, rubidium cesium tungsten bronze particles and additives. The rubidium cesium tungsten bronze particles (Rb.sub.xCs.sub.y).sub.0.33WO.sub.z is an alkali metal tungsten oxide material practical for use as a near infrared (NIR) absorbent, thermal mask additive, thermosetting resin or sputtering palladium material. The additive is practical for use in organic or inorganic substrates, such as plastic, paint, enamel, ink, adhesive, ceramic or glass, and prepared, for example, by a plasma torch.

The present invention provides a positive electrode active material for secondary battery and a secondary battery including the same. The positive electrode active material includes a core including a lithium composite metal oxide of Formula 1 below, a first surface-treated layer positioned on the surface of the core and including a lithium oxide of Formula 2 below, and a second surface treated layer positioned on the core or the first surface-treated layer and including a lithium compound of Formula 3. Thus, the present invention can improve capacity characteristics and output characteristics of a battery and also reduce the generation of gas,

Li.sub.aNi.sub.1-x-yCo.sub.xM1.sub.yM3.sub.zM2.sub.wO.sub.2 [Formula 1]

Li.sub.mM4O.sub.(m+n)/2 [Formula 2]

Li.sub.pM5.sub.qA.sub.r [Formula 3]

(in formulae 1 to 3, A, M1 to M5, a, x, y, z, w, m, n, p, and q are the same as those defined in the specification).