The present disclosure provides a method for separating iron element in brine and application thereof. The method for separating iron element in brine comprises: adding a pH adjusting agent to brine, to adjust pH of the brine to 6.0-7.0, and controlling the temperature of the brine to 75° C.-90° C.; introducing an oxygen-containing gas into the brine, to covert the iron element in the brine into magnetic iron oxide; and separating the magnetic iron oxide from the brine by magnetic adsorption to obtain an iron-removed brine.

A phosphorus-containing molecular sieve has a phosphorus content of about 0.3-5 wt %, a pore volume of about 0.2-0.95 ml/g, and a ratio of B acid content to L acid content of about 2-10. The molecular sieve has a specific combination of characteristics, including a high ratio of B acid content to L acid content, thereby exhibiting higher hydrocracking activity and ring-opening selectivity when used in the preparation of a hydrocracking catalyst.

A whitlockite preparation method includes: determining a size of the whitlockite crystal to be prepared; determining a first amount of a first cation other than calcium ion on the basis of the determined size of the crystal, wherein when the determined size of the whitlockite crystal is a first size, the first amount is determined to be a first value, wherein when the determined size is a second size larger than the first size, the first amount is determined to be a second value; mixing calcium ion and phosphate ion in order to prepare a first phosphate crystal, wherein the determined first amount of the cation other than calcium ion is also mixed therewith; mixing a second amount of cation other than calcium ion with phosphate ion to prepare a second phosphate crystal; and aging a solution containing the first phosphate crystal and the second phosphate crystal.

The present invention relates to an SiC material and an SiC composite material and, more particularly, to an SiC material and an SiC composite material having a diffraction intensity ratio (I) of an X-ray diffraction peak, calculated by formula 1 down below, of less than 1.5. The present invention can provide an SiC material and an SiC composite material which can be etched evenly when exposed to plasma and thereby reduce the occurrence of cracks, holes and so forth. [Formula 1] Diffraction intensity ratio (I)=(peak intensity of plane (200)+peak intensity of plane (220))/peak intensity of plane (111).

A hydrotalcite is represented by formula (1):
(M.sup.2+).sub.1-X(M.sup.3+).sub.X(OH).sub.2(A.sup.n−).sub.X/n.Math.mH.sub.2O  (1), wherein M.sup.2+ indicates a divalent metal, M.sup.3+ indicates a trivalent metal, A.sup.n− indicates an n-valent anion, n indicates an integer of 1 to 6, 0.17≤x≤0.36, and 0≤m≤10. The hydrotalcite has (A) a lattice strain in the <003> direction is 3×10.sup.−3 or less as measured using an X-ray diffraction method; (B) primary particles with an average width between 5 nm and 200 nm inclusive per a SEM method; and (C) a degree of monodispersity of 50% or greater (degree of monodispersity (%)=(average width of primary particles as measured using the SEM method/average width of secondary particles as measured using a dynamic light scattering method)×100). A resin containing the hydrotalcite, a suspension containing the hydrotalcite and a method for producing the hydrotalcite are disclosed.

A composite nanomaterial of ZnO impregnated by, e.g., a green copper phthalocyanine compound (CuPc) can be an efficient solar light photocatalyst for water remediation. The composite may include hollow shell microspheres and hollow nanospheres of CuPc-ZnO. CuPc may function as a templating and/or structure modifying agent, e.g., for forming hollow microspheres and/or nanospheres of ZnO particles. The composite can photocatalyze the degradation of organic pollutants such as crystal violet (CV) and 2,4-dichlorophenoxyacetic acid as well as microbes in water under solar light irradiation. The ZnO—CuPc composite can be stable and recyclable under solar irradiation.

A main object of the present disclosure is to provide a sulfide solid electrolyte with high ion conductivity. In the present disclosure, the above object is achieved by providing a sulfide solid electrolyte comprising: a Li element, an M element (M is at least one kind of P, Ge, Si and Sn), and a S element, and the sulfide solid electrolyte has an argyrodite type crystal phase, in .sup.31P-MAS-NMR, the sulfide solid electrolyte has peak A at 82.1 ppm±0.5 ppm and peak B at 86.1 ppm±0.5 ppm, and when an area ratio of the peak A is regarded as S.sub.A, and an area ratio of the peak B is regarded as S.sub.B, a proportion of the S.sub.B to the S.sub.A, that is S.sub.B/S.sub.A, is 0.23 or less.

A cerium oxide nanoparticle is produced by mixing a solution of an aromatic heterocyclic compound having no substituent or at least one substituent selected from the group consisting of a methyl group, an ethyl group, an amino group, an aminomethyl group, a monomethylamino group, a dimethylamino group, and a cyano group and containing 2 to 8 carbon atoms and 1 to 4 nitrogen atoms in a ring structure of the aromatic heterocyclic compound, with a solution containing a cerium (III) ion or with a cerium (III) salt, followed by addition of an oxidant.

Methods and composition are provided for deriving cement and/or supplementary cementitious materials, such as pozzolans, from one or more non-limestone materials, such as one or more non-limestone rocks and/or minerals. The non-limestone materials, e.g., non-limestone rocks and/or minerals, are processed in a manner that a desired product, e.g., cement and/or supplementary cementitious material, is produced.

A method for manufacturing predominantly amorphous silicon-containing particles includes a chemical compound of formula: Si.sub.(1−x)C.sub.x, where 0.005≤x<0.05. The particles, when subjected to XRD analysis applying unmonochromated CuKα radiation, exhibit one peak at around 28° and one peak at around 52°. Both peaks have a Full Width at Half Maximum of at least 5° when using Gaussian peak fitting. The method includes forming a homogeneous gas mixture of a first precursor gas of a silicon containing compound and at least one second precursor gas of a substitution element M containing compound, injecting the homogeneous gas mixture of the first and second precursor gases into a reactor space where the precursor gases are heated to a temperature in the range of from 700 to 900° C. so that the precursor gases react and form particles, and collecting and cooling the particles to a temperature in the range of from ambient temperature up to about 350° C. The relative amounts of the first and the second precursor gases are adapted such that the formed particles obtain an atomic ratio C: Si in the range of [0.005, 0.05).