C01P2004/01

METHOD FOR PREPARING SINGLE-WALLED CARBON NANOTUBES USING SINGEL-ATOM CATALYST, AND SINGLE-WALLED CARBON NANOTUBES PREPARED THEREBY

Provided is a method for preparing single-walled carbon nanotubes (SWCNTs), including the steps of: (a) depositing a metal catalyst in the form of single atom or atomic cluster on a catalyst support to prepare a single-atom catalyst or an atomic cluster catalyst; and (b) growing carbon nanotubes on the single-atom catalyst or the atomic cluster catalyst to prepare single-walled carbon nanotubes (SWCNTs). According to the method, it is possible to uniformly mass-produce single-walled carbon nanotubes (SWCNTs) having excellent heat conductivity, electroconductivity, mechanical strength, dispersibility, or the like.

Q-SILICON SYNTHESIS, PROPERTIES AND APPLICATIONS
20240351887 · 2024-10-24 ·

Various examples are provided related to Q-silicon, Q-carbon and combinations thereof, and synthesis, properties and applications of Q-silicon and Q-carbon. In one example, a method includes forming a layer of amorphous silicon; melting at least a portion of the layer of amorphous silicon in an undercooled state; and forming Q-silicon by quenching the melted amorphous silicon from the undercooled state. In another example, a Q-silicon includes a random arrangement of tetrahedra, the tetrahedra including dangling bonds, unpaired spins or both. The atomic structure of the Q-silicon is based upon time in an undercooled state before quenching. In another example, a battery anode includes Q-silicon mixed with a polyvinylidene difluoride (PVDF) binder, the Q-silicon including a random arrangement of tetrahedra, the tetrahedra comprising dangling bonds, unpaired spins or both. The battery anode can include Q-carbon and Q-silicon mixed with the PVDF binder.

Template-Assisted Synthesis of 2D Nanosheets Using Nanoparticle Templates
20180186653 · 2018-07-05 ·

A template-assisted method for the synthesis of 2D nanosheets comprises growing a 2D material on the surface of a nanoparticle substrate that acts as a template for nanosheet growth. The 2D nanosheets may then be released from the template surface, e.g. via chemical intercalation and exfoliation, purified, and the templates may be reused.

Oriented Apatite-Type Oxide Ion Conductor and Method for Manufacturing Same

In order to provide a novel oriented apatite-type oxide ion conductor which can achieve an increase in area through suppression of crack generation and preferably can be manufactured more inexpensively by an uncomplicated process, an oriented apatite-type oxide ion conductor composed of a composite oxide represented by A.sub.9.33+x[T.sub.6yM.sub.y]O.sub.26.00+z A in the formula is one kind or two or more kinds of elements selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Be, Mg, Ca, Sr, and Ba. T in the formula is an element including Si, Ge, or both of them. M in the formula is one kind or two or more kinds of elements selected from the group consisting of B, Ge, Zn, Sn, W, and Mo.

BORON NITRIDE NANOTUBE SYNTHESIS VIA DIRECT INDUCTION

High quality, catalyst-free boron nitride nanotubes (BNNTs) that are long, flexible, have few wall molecules and few defects in the crystalline structure, can be efficiently produced by a process driven primarily by Direct Induction. Secondary Direct Induction coils, Direct Current heaters, lasers, and electric arcs can provide additional heating to tailor the processes and enhance the quality of the BN-NTs while reducing impurities. Heating the initial boron feed stock to temperatures causing it to act as an electrical conductor can be achieved by including refractory metals in the initial boron feed stock, or providing additional heat via lasers or electric arcs. Direct Induction processes may be energy efficient and sustainable for indefinite periods of time. Careful heat and gas flow profile management may be used to enhance production of high quality BNNT at significant production rates.

METHOD FOR PRODUCING MICROPLATES FROM SHELLS, AND MATERIAL PRODUCED BY USING THE MICROPLATES

The present invention relates to a method for producing microplates from shells. The production method of the present invention includes a step of treating pulverized shells with an alkaline solution, thereby separating microplates of shells, and a step of producing microplates in the form of precipitate from the solution.

White pigment dispersions

A method for manufacturing low effective density TiO.sub.2 includes providing a template having a surface. The template surface is coated with a titanium-containing compound that can be reduced to TiO.sub.2 at high temperature. The template is removed, thereby forming porous TiO.sub.2 particles. The effective density of the porous TiO.sub.2 particles is less than 4.

Thermoelectric materials and their manufacturing method
09941456 · 2018-04-10 · ·

Disclosed is a thermoelectric material with excellent thermoelectric conversion performance. The thermoelectric material includes a matrix having Cu and Se, a Cu-containing particle, and an Ag-containing structure.

METHOD FOR CONTINUOUS EPITAXY OF CARBON FILM
20240367981 · 2024-11-07 · ·

A method for continuous epitaxy of a carbon film, including the following steps: Si, providing a foil, wherein the foil is selected from a nickel foil or a copper-nickel alloy foil and has a first surface and a second surface; and S2, using the foil as a substrate and placing it on a solid carbon source, wherein the first surface of the foil is positioned close to the solid carbon source, while the second surface of the foil is positioned away from the solid carbon source, and then heating the foil and the solid carbon source, so that a carbon film is formed by continuous epitaxy on the second surface of the foil.

METHOD FOR MAKING SEMIMETAL COMPOUND OF PT
20180087178 · 2018-03-29 ·

The disclosure relates to a method for making semimetal compound of Pt. The semimetal compound is a single crystal material of PtSe.sub.2. The method comprises: placing pure Pt and pure Se in a reacting chamber as reacting materials; evacuating the reacting chamber to be vacuum less than 10 Pa; heating the reacting chamber to a first temperature of 600 degrees Celsius to 800 degrees Celsius and keeping for 24 hours to 100 hours; cooling the reacting chamber to a second temperature of 400 degrees Celsius to 500 degrees Celsius and keeping for 24 hours to 100 hours at a cooling rate of 1 degrees Celsius per hour to 10 degrees Celsius per hour to obtain a crystal material of PtSe.sub.2; and separating the excessive reacting materials from the crystal material of PtSe.sub.2.