Patent classifications
C03C8/22
Sealing material
A sealing material of the present invention is a sealing material for sealing a metal material, including 70 mass % to 100 mass % of glass powder including alkali silicate glass and 0 mass % to 30 mass % of ceramic powder, and having a linear thermal expansion coefficient in a temperature range of from 30 C. to 380 C. of more than 10010.sup.7/ C. and 17010.sup.7/ C. or less.
Sealing material
A sealing material of the present invention is a sealing material for sealing a metal material, including 70 mass % to 100 mass % of glass powder including alkali silicate glass and 0 mass % to 30 mass % of ceramic powder, and having a linear thermal expansion coefficient in a temperature range of from 30 C. to 380 C. of more than 10010.sup.7/ C. and 17010.sup.7/ C. or less.
DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME
A display panel may include a first display substrate, a second display substrate disposed over the first display substrate, and a sealing member bonding the first display substrate and the second display substrate. The sealing member may include a frit sealing member including an outer region and an inner region, with the inner region disposed next to an inner side of the outer region and having a first crystallization temperature lower than a second crystallization temperature of the outer region, and an organic sealing member disposed next to an inner side of the frit sealing member.
ELECTRICALLY CONDUCTIVE COMPOSITION AND METHOD FOR PRODUCING TERMINAL ELECTRODE
A conductive composition has excellent adhesiveness and conductivity. A conductive composition contains copper powder, cuprous oxide, a lead-free glass frit, and an acid-based additive. The lead-free glass frit is contained in an amount of 9 to 50 parts by mass relative to 100 parts of the copper powder. The lead-free glass frit contains a borosilicate zinc-based glass frit and a vanadium zinc-based glass frit. The borosilicate zinc-based glass frit contains boron oxide, silicon oxide, zinc oxide, and optional other components, among which boron oxide, silicon oxide, and zinc oxide serve as top-three oxide components in terms of content. The vanadium zinc-based glass frit contains vanadium oxide, zinc oxide, and optional other components, among which vanadium oxide and zinc oxide serve as top-two oxide components in terms of content. The acid-based additive is contained 0.1 to 5.0 parts by mass relative to 100 parts of the copper powder.
ELECTRICALLY CONDUCTIVE COMPOSITION, METHOD FOR PRODUCING CONDUCTOR, AND METHOD FOR FORMING WIRING OF ELECTRONIC COMPONENT
A conductive composition has excellent adhesiveness to a substrate and conductivity. For example, a conductive composition contains copper powder, cuprous oxide, a lead-free glass frit, and a carboxylic acid-based additive. The cuprous oxide is contained in an amount of at least 5.5 parts by mass and up to 25 parts by mass relative to 100 parts by mass of the copper powder. The lead-free glass frit contains a borosilicate zinc-based glass frit and a vanadium zinc-based glass frit. The borosilicate zinc-based glass frit contains boron oxide, silicon oxide, zinc oxide, and optional other components, among which boron oxide, silicon oxide, and zinc oxide serve as top-three oxide components in terms of content. The vanadium zinc-based glass frit contains vanadium oxide, zinc oxide, and optional other components, among which vanadium oxide and zinc oxide serve as top-two oxide components in terms of content.
HIGH THERMAL EXPANSION GLASS COMPOSITES AND USES THEREOF
The present invention relates to glass composites, including filled glass composites and uses thereof. In particular examples, the composites provide improved thermal expansion characteristics. Also described are methods of forming such composites, such as by adding a particle filler to a glass mixture.
LOW POROSITY GLASS COATINGS FORMED ON COILED WIRES, HIGH TEMPERATURE DEVICES CONTAINING THE SAME, AND METHODS FOR THE FABRICATION THEREOF
Methods for fabricating wires insulated by low porosity glass coatings are provided, as are high temperature electromagnetic (EM) devices containing such wires. In embodiments, a method for fabricating a high temperature EM device includes applying a glass coating precursor material onto a wire. The glass coating precursor material contains a first plurality of glass particles having an initial softening point. after application onto the wire, the glass coating precursor material is heat treated under process conditions producing a crystallized intermediary glass coating having a modified softening point exceeding the initial softening point. The crystallized intermediary glass coating is then infiltrated with a filler glass precursor material containing a second plurality of glass particles. After infiltration, the filler glass precursor material is heat treated to consolidate the second plurality of glass particles into the crystallized intermediary glass coating and thereby yield a low porosity glass coating adhered to the wire.
GLASS FRIT, CONDUCTIVE PASTE AND USE OF THE CONDUCTIVE PASTE
The invention relates to a glass frit being a mixture of a first glass frit comprising tellurium oxide and bismuth oxide as main components and a second glass frit comprising tellurium oxide and lead oxide as main components, wherein the mixture of the first glass frit and the second glass frit comprises 40 to 55% by weight of tellurium oxide, 15 to 25% by weight of lead oxide and 5 to 15% by weight of bismuth oxide. The invention further relates to a conductive paste for forming electrodes on a semiconductor substrate, the paste comprising 85 to 92% by weight of an electrically conductive metal, 1.5 to 3.5% by weight of the glass frit and organic medium. The conductive paste is used for forming electrically conductive grid lines on semiconductor substrates for solar cells.
GLASS FRIT, CONDUCTIVE PASTE AND USE OF THE CONDUCTIVE PASTE
The invention relates to a glass frit being a mixture of a first glass frit comprising tellurium oxide and bismuth oxide as main components and a second glass frit comprising tellurium oxide and lead oxide as main components, wherein the mixture of the first glass frit and the second glass frit comprises 40 to 55% by weight of tellurium oxide, 15 to 25% by weight of lead oxide and 5 to 15% by weight of bismuth oxide. The invention further relates to a conductive paste for forming electrodes on a semiconductor substrate, the paste comprising 85 to 92% by weight of an electrically conductive metal, 1.5 to 3.5% by weight of the glass frit and organic medium. The conductive paste is used for forming electrically conductive grid lines on semiconductor substrates for solar cells.
Conductive paste and method for producing solar cell by using the same
The present invention relates to a conductive paste and a method for producing solar cell by using the same. The conductive paste comprises at least silver powders and a composite glass frit comprising a first type of glass frit containing lead oxides and silicon oxides and a second type of glass frit containing tellurium oxides and zinc oxides wherein the first type of glass frit and the second type of glass frit are in a weight ratio of 93:7 to 44:56.