C03C14/006

Wavelength-converting film and semiconductor light emitting apparatus having the same

A wavelength-converting film includes a sintered body formed of a mixture of a wavelength-converting material and a glass composition. The wavelength-converting material includes a quantum dot having a core-shell structure and a protective layer coating a surface of the quantum dot. A shell of the quantum dot contains at least one of Zn, S, and Se, the protective layer does not contain S and Se, and the glass composition includes a SnO.sub.2P.sub.2O.sub.5SiO.sub.2-based composition.

Antimicrobial phase-separable glass/polymer articles and methods for making the same

An antimicrobial article that includes: an antimicrobial composite region that includes a matrix comprising a polymeric material, and a first plurality of particles within the matrix. The particles include a phase-separable glass with a copper-containing antimicrobial agent. The antimicrobial composite region can be a film containing the first plurality of particles that is subsequently laminated to a bulk element. The first plurality of particles can also be pressed into the film or a bulk element to define an antimicrobial composite region. An exposed surface portion of the antimicrobial composite region can exhibit at least a log 2 reduction in a concentration of at least one of Staphylococcus aureus, Enterobacter aerogenes, and Pseudomonas aeruginosa bacteria under a Modified EPA Copper Test Protocol.

QUANTUM DOT GLASS AGING DEVICE AND AGING METHOD THEREOF
20200148592 · 2020-05-14 ·

A quantum dot (QD) glass aging device including a bottom part including a flat surface defined by a first direction and a second direction intersecting the first direction; a side wall part including a side surface defined by the first direction and a third direction intersecting the bottom part, and a seating part disposed between the bottom part and the side wall part. The seating part includes a plurality of protrusion parts extending in the first direction and arranged in the second direction. A plurality of QD glasses is arranged on the plurality of protrusion parts. A plurality of light sources is disposed in the plurality of grooves defined between the protrusion parts and between the side wall part and a first protrusion part adjacent to the side wall part. Heights of upper surfaces of the protrusion parts gradually decrease from the side wall part to the bottom part.

Broadband polarizer made using ion exchangable fusion drawn glass sheets

The disclosure is directed to broadband, glass optical polarizers and to methods for making the glass optical polarizers. The glass optical polarizer includes a substantially bubble free fusion drawn glass having two pristine glass surfaces and a plurality of elongated zero valent metallic particle polarizing layers.

DIVALENT MANGANESE-DOPED ALL-INORGANIC PEROVSKITE QUANTUM DOT GLASS AND PREPARATION METHOD THEREOF
20200131081 · 2020-04-30 · ·

The present invention relates to a divalent manganese-doped all-inorganic perovskite quantum dot glass, and constituents of the divalent manganese-doped all-inorganic perovskite quantum dot glass are as follows: B.sub.2O.sub.3: 25%-45%, SiO.sub.2: 25%-45%, MCO.sub.3: 1%-10%, Al.sub.2O.sub.3: 1%-10%, ZnO: 1%-5%, Cs.sub.2CO.sub.3: 1%-10%, PbCl.sub.2: 1%-10%, NaCl: 1%-10%, MnCl.sub.2: 1%-10%, wherein M is Ca, Sr or Ba. Preparation of the quantum dot glass is as follows: grinding each raw constituent materials and mixing well to form a mixture, melting the mixture, followed by molding, annealing and performing thermal treatment. By the thermal treatment at different temperatures, a divalent manganese-doped quantum dot glass can be obtained. The divalent manganese ions doped perovskite quantum dot glass is a kind of light-emitting material with great application prospect, for possessing good stability and rather high fluorescence quantum yield.

Composite material, method of forming the same, and apparatus including composite material

A composite material structure including a matrix material layer; and a plurality of one-dimensional nanostructure distributed in the matrix material layer and having an electrical conductivity which is greater than an electrical conductivity of the matrix material layer, wherein the plurality of one-dimensional nanostructures includes a first one-dimensional nanostructure and a second one-dimensional nanostructure in contact with each other.

NANOPHOSPHOR-ATTACHED INORGANIC PARTICLES AND WAVELENGTH CONVERSION MEMBER
20200123439 · 2020-04-23 ·

Provided are nanophosphor-attached inorganic particles that can suppress the degradation of the nanophosphor when sealed in glass, and a wavelength conversion member using the nanophosphor-attached inorganic particles. The nanophosphor-attached inorganic particle 10 include: inorganic particles 1 having an average particle diameter of 1 m or more; and a nanophosphor 2 attached to surfaces of the inorganic particles 1.

TRANSPARENT SUBSTRATE WITH ANTIREFLECTIVE FILM
20200123049 · 2020-04-23 · ·

Provided is an antireflective-film attached transparent substrate having a luminous transmittance of 20% to 84% and a b* value of a transmission color being 5 or smaller under a D65 light source, in which the antireflective film has a luminous reflectance being 1% or lower and a sheet resistance being 10.sup.4/ or higher, and in which the antireflective film has a multilayer structure built up of at least two layers, at least one layer is constituted mainly of silicon oxide, and at least another layer is constituted mainly of a mixed oxide of at least one oxide of Mo and W and at least one oxide of Si, Nb, Ti, Zr, Ta, Al, Sn, and In, and has an extinction coefficient at 550 nm being in a range of 0.005 to 3.

CHIP RESISTOR
20200090843 · 2020-03-19 ·

A chip resistor includes an insulating substrate made of alumina, a pair of electrodes disposed on an upper surface of the insulating substrate, a glass glaze layer made of glass disposed on the upper surface of the insulating substrate, and a resistive element disposed on the upper surface of the glass glaze layer. The resistive element is disposed between the pair of electrodes. The softening point of the glass of the glass glaze layer ranges from 580 C. to 760 C. This chip resistor prevents the resistive element from being peeled off.

Optical element and associated manufacturing method

An optical element is provided. The optical element may comprise a material, the material being a matrix and a set of particles included in the matrix, the material having a molar fraction of SiO.sub.2 higher than or equal to 65 percent, each particle having a dimension smaller than or equal to 80 nanometers.