A method of processing a double sided wafer of a microelectromechanical device includes spinning a resist onto a first side of a first wafer. The method further includes forming pathways within the resist to expose portions of the first side of the first wafer. The method also includes etching one or more depressions in the first side of the first wafer through the pathways, where each of the depressions have a planar surface and edges. Furthermore, the method includes depositing one or more adhesion metals over the resist such that the one or more adhesion metals are deposited within the depressions, and then removing the resist from the first wafer. The method finally includes depositing indium onto the adhesion metals deposited within the depressions and bonding a second wafer to the first wafer by compressing the indium between the second wafer and the first wafer.

The present invention relates to structure including an interfacial seal between a glass-ceramic component and a metal component, as well as methods for forming such structures. In particular embodiments, the interfacial seal includes a metal oxide. Such interfacial seals can be beneficial for, e.g., hermetic seals between a glass-ceramic component and a metal component.

The present invention provides a glass substrate in which in a step of sticking a glass substrate and a silicon-containing substrate to each other, bubbles hardly intrude therebetween. The present invention relates to a glass substrate for forming a laminated substrate by lamination with a silicon-containing substrate, having a warpage of 2 m to 300 m, and an inclination angle due to the warpage of 0.0004 to 0.12.

The present invention provides a glass substrate in which in a step of sticking a glass substrate and a silicon-containing substrate to each other, bubbles hardly intrude therebetween. The present invention relates to a glass substrate for forming a laminated substrate by lamination with a silicon-containing substrate, having a warpage of 2 m to 300 m, and an inclination angle due to the warpage of 0.0004 to 0.12.

An at least partially crystallized glass includes at least one crystal phase and pores which are distributed in the at least partially crystallized glass in a structured manner.

A method of manufacturing a bonded body includes a preparation step of interposing a sealing material containing glass between a highly thermal conductive substrate and a glass substrate, and a bonding step of forming a sealing layer by irradiating the sealing material with laser light. The bonding step includes a first heating step of preheating the sealing material at a temperature lower than a softening point of the sealing material or a temperature at which the sealing material is prevented from softening and flowing by irradiation with the laser light, and a second heating step of heating, after the first heating step, the sealing material at a temperature equal to or higher than the softening point of the sealing material or a temperature at which the sealing material softens and flows by irradiation with the laser light.

A flexible article made of glass and metal foil, as well as the production thereof, are provided. The flexible article is a multilayered structure having at least one glass layer and one metal foil layer, and the shear strength between glass and metal foil is above 1 MPa/mm.sup.2. The glass layer of said flexible article has high electrical resistivity at ambient temperature, low roughness, low thickness, good adherence to metal foil, and the glass in the glass layer has high temperature stability and low flowing temperature, and the thermal expansion coefficient (20 to 300 C.) is 110.sup.6/K to 2510.sup.6/K. The whole article is flexible and can be bent, and the curvature radius of the bent flexible article is above 1 mm.

The present invention relates to a tellurium-oxide-based glass composition for forming a glass-to-metal seal to alloys or metals having a coefficient of thermal expansion higher than 16 ppm/ C., said composition comprising TeO.sub.2, ZnO, TiO.sub.2 and optionally K.sub.2O and being essentially free of lead oxide, sodium oxide and vanadium oxide.

In addition it relates to the use of the glass composition according to the invention to form a glass-to-metal seal between copper or a copper alloy and an alloy or a metal having a coefficient of thermal expansion higher than 16 ppm/ C., in particular aluminum alloys.

It furthermore relates to a connector comprising a contact made of copper or of copper alloy, an insert and/or shell made of a metal or alloy having a coefficient of thermal expansion higher than 16 ppm/ C. and, by way of glass-to-metal sealant between the contact and the insert and/or shell, a tellurium-oxide-based glass having the composition according to the invention.

Lastly, it relates to a process for forming a glass-to-metal seal between a contact made of copper or of copper alloy and an insert and/or shell made of metal or alloy having a coefficient of thermal expansion higher than 16 ppm/ C.

A join is provided that has an electrically insulating component and two joining partners secured to one another and electrically insulated from one another by the electrically insulating component. The electrically insulating component has a surface that extends between the two joining partners. The surface defines a structure selected from a group consisting of an elevation, a depression, and any combinations thereof. The structure elongates a direct path along the surface. The structure completely surrounds at least one of the two joining partners. The electrically insulating component and/or the structure includes a glass that is at least partially crystallized.

A method of forming a sealed device comprising providing a first substrate having a first surface, providing a second substrate adjacent the first substrate, and forming a weld between an interface of the first substrate and the adjacent second substrate, wherein the weld is characterized by ((.sub.tensile stress location)/(.sub.interface laser weld))<<1 or <1 and .sub.interface laser weld>10 MPa or >1 MPa where .sub.tensile stress location is the stress present in the first substrate and .sub.interface laser weld is the stress present at the interface. This method may be used to manufacture a variety of different sealed packages.